LX5506E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION differential output power detector pair to help reduce BOM cost and PCB board space for system implementation. LX5506E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506E an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Advanced InGaP HBT 4.9-5.85GHz Operation Single-Polarity 3.3V Supply Total Current ~ 200mA for Pout=19dBm at 5.25GHz P1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dBm EVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBm Integrated Power Detectors On-Chip Input Match Simple Output Match Minimal External Components Small Footprint: 3x3mm2 Low Profile: 0.9mm WWW . Microsemi .C OM The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It also has an integrated APPLICATIONS/BENEFITS FCC U-N11 Wireless IEEE 802.11a HiperLAN2 PRODUCT HIGHLIGHT PACKAGE ORDER INFO TJ (°C) LX5506E-LQ LX5506E 0 to 70 Plastic MLPQ LQ 16-Pin Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX5506E-LQT) Copyright 2000 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5506E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi .C OM DC Supply Voltage, RF Off...............................................................................6V Collector Current ........................................................................................500mA Total Power Dissipation....................................................................................3W RF Input Power........................................................................................... 10dBm Operation Ambient Temperature .......................................................-40 to +85°C Storage Temperature.......................................................................... -60 to 150°C 13 14 15 16 12 1 11 2 10 3 9 4 Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 8 7 6 5 LQ PACKAGE (Bottom View) FUNCTIONAL PIN DESCRIPTION Name Pin # Description RF IN 2, 3 RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VCC 4 Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). VB1 VB2 VB3 5 6 7 Bias control voltage for the first stage. Bias control voltage for the second stage. Bias control voltage for the third stage. DET REF 9 8 Detector output voltage for the third stage PA output power. Detector output voltage for the reference power detector. RF OUT 10, 11 VC1 VC2 VC3 16 15 14 GND Center Metal The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the power amplifier. NC 1,12,13 These pins are unused and not connected to the device inside the package. They can be treated either as open pins, or connected to ground for better heat dissipation. DC supply voltage for the first stage amplifier. DC supply voltage for the second stage amplifier. DC supply voltage for the third stage amplifier. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA Copyright 2000 Rev. 1.0, 2003-01-10 RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. LX5506E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET PARAMETER CONDITION Frequency Range Output Power at 1dB Compression Power Gain at Pout=19dBm EVM at Pout=19dBm MIN. f 5.15 Pout 25 Bias Control Reference Current For Icq=100mA Small-Signal Gain Gain Flatness Over 200MHz Gain Variation Over Temperature -20 to +85 C o Input Return Loss Output Return Loss Reverse Isolation Pout = 19dBm Detector Response Pout = 19dBm Ramp-On Time 10~90% MIN. 5.35 5.7 27 25 TYP. MAX. UNIT 5.85 GHz dBm 21 dB 3 3.5 % Ic_total 200 210 mA Icq 100 100 mA Iref 2 2 mA S21 22 20 dB ∆S21 +/-0.5 +/-0.5 dB ∆S21 S11 +/-1 +/-1 dB S22 -10 -10 S12 -40 -40 dB -40 -40 dBc Pout = 19dBm Third Harmonic MAX. 27 64QAM/54Mbps Quiescent Current TYP. 23 Gp Total Current at Pout=19dBm Second Harmonic SYMBOL -20 -10 -12 -10 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over the following test conditions: Vc = 3.3V, Icq = 100mA, TA = 25°C dB dB -40 -40 dBc DET 1.7 1.2 V tON 100 100 ns Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. ELECTRICALS Copyright 2000 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5506E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET 7 250 6.5 230 5.5 220 5 210 4.5 200 4 190 3.5 180 3 170 2.5 160 2 150 1.5 140 15 16 17 18 19 20 21 Ictotal (mA) EVM (%) 240 EVM Ictotal 6 1 WWW . Microsemi .C OM CHARACTERISTIC CURVES Typical EVM and Total Current vs. Pout (Vc=3.3V, Vref=2.9V, Icq=95mA, Freq=5.25GHz, 64QAM/54Mbps) 130 Pout (dBm) Note: EVM is actual measured data without de-embedding. Test system EVM floor is 1.4~1.6% for input power levels in test. Typical ACPR vs. Pout (Vc=3.3V, Vref=2.9V, Icq=95mA, Freq=5.25GHz, 64QAM/54Mbps, 30MHz Offset) -45 -46 ACPR -47 ACPR (dBc) -48 -49 -50 -51 ELECTRICALS -52 -53 -54 -55 15 16 17 18 19 20 21 Pout (dBm) Copyright 2000 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5506E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET 6 215 5.5 EVM Ictotal 5 210 205 4.5 4 200 3.5 195 3 2.5 Ictotal(mA) EVM(%) WWW . Microsemi .C OM CHARACTERISTIC CURVES EVM and Total Current vs. Frequency (Vc=3.3V, Vref=2.9V, Icq=95mA, Pout=18dBm, 64QAM/54Mbps) 190 2 185 1.5 1 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 180 5.9 Frequency (GHz) Note: EVM is actual measured data without de-embedding. Yokogawa VG6000 system EVM floor is 1.4~1.6% for input power levels in test. 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 DET DET-REF ELECTRICALS Detector Output (V) Typical Power Detector Response (Vc=3.3V, Vref=2.9V, Icq=95mA, Freq=5.25GHz, 64QAM/54Mbps) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pout (dBm) Copyright 2000 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5506E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi .C OM LQ 16-Pin MLPQ Plastic (3mmx3mm EP) A F E B H G I C D1 D MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.18 0.30 0 0.05 1.30 1.55 0.18 0.30 0.50 BSC 1.30 1.55 0.30 0.50 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.007 0.011 0 0.002 0.051 0.061 0.007 0.011 0.019 BSC 0.051 0.061 0.011 0.020 PACKAGE Dim A B C D D1 E F G H I Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Copyright 2000 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5506E I N T E G R A T E D P R O D U C T S InGaP HBT 4 – 6GHz Power Amplifier P RELIMINARY D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2000 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7