STP80NF55-06 - STP80NF55-06FP STB80NF55-06-1 N-CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP/I2PAK STripFET POWER MOSFET TYPE ■ ■ ■ ■ ■ VDSS R DS(on) ID STP80NF55-06/-1 55 V <0.0065Ω 80 A STP80NF55-06FP 55 V <0.0065Ω 60 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 2 1 TO-220 TO-220FP 1 2 3 I2PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)80NF-06-1 VDS VDGR Unit STP80NF55-06FP Drain-source Voltage (VGS = 0) 55 V Drain-gate Voltage (RGS = 20 kΩ) 55 V ±20 VGS Gate- source Voltage ID (1) Drain Current (continuous) at TC = 25°C 80 60 A ID Drain Current (continuous) at TC = 100°C 80 42 A Drain Current (pulsed) 320 240 A Total Dissipation at TC = 25°C IDM (l ) PTOT VISO dv/dt (2) Tstg Tj 300 45 W Derating Factor 2 0.30 W/°C Insulation Winthstand Voltage (DC) -- 2500 V Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature ( ●) Pulse width limi ted by safe operating area April 2002 V 10 V/ns – 55 to 175 °C (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤400 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/10 STP80NF55-06/FP/STB80NF55-06-1 THERMAL DATA TO-220 / I2PAK TO-220FP 0.5 3.33 °C/W Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 80 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 650 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA Max. Unit 55 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10 V, I D = 40 A Min. 2 Typ. 3 4 V 0.005 0.0065 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/10 Parameter Test Conditions Forward Transconductance VDS =15 V , ID =40 A C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss Crss Min. 50 S 7300 pF Output Capacitance 980 pF Reverse Transfer Capacitance 250 pF STP80NF55-06/FP/STB80NF55-06-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 27V, ID = 40A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 44V, ID = 80A, VGS = 10V Typ. Max. Unit 40 ns 240 ns 190 38 66 256 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Condit ions Min. 260 75 VDD = 27V, ID = 40A, R G = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 80 A ISDM (1) Source-drain Current (pulsed) 320 A VSD (2) Forward On Voltage ISD = 80A, VGS = 0 1.5 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. 80 0.24 6 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 / I2PAK Safe Operating Area for TO-220FP 3/10 STP80NF55-06/FP/STB80NF55-06-1 Thermal Impedance For TO-220 / I PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/10 STP80NF55-06/FP/STB80NF55-06-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Drain-Source Breakdown vs Temperature 5/10 STP80NF55-06/FP/STB80NF55-06-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP80NF55-06/FP/STB80NF55-06-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 E 0.050 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/10 STP80NF55-06/FP/STB80NF55-06-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 8/10 L4 STP80NF55-06/FP/STB80NF55-06-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 9/10 STP80NF55-06/FP/STB80NF55-06-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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