STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH Power MOSFET TYPE STB10NK60Z STB10NK60Z-1 STH10NK60ZFI STP10NK60Z STP10NK60ZFP STW10NK60Z ■ ■ ■ ■ ■ ■ VDSS R DS(on) 600 600 600 600 600 600 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 V V V V V V Ω Ω Ω Ω Ω Ω ID 10 10 10 10 10 10 A A A A A A Pw 115 W 115 W 35 W 115 W 35 W 156 W TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. 3 3 2 2 1 1 TO-220 TO-220FP ISOWATT218 3 1 1 I2PAK 2 3 3 2 1 D2PAK TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP10NK60Z P10NK60Z TO-220 TUBE STP10NK60ZFP P10NK60ZFP TO-220FP TUBE STB10NK60ZT4 B10NK60Z D2PAK TAPE & REEL STB10NK60Z B10NK60Z D 2PAK TUBE (ONLY UNDER REQUEST) STB10NK60Z-1 B10NK60Z I2PAK TUBE STH10NK60ZFI H10NK60FI ISOWATT218 TUBE STW10NK60Z W10NK60Z TO-247 TUBE April 2002 1/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220/ D2PAK/I2PAK VDS VDGR VGS TO-220FP Unit ISOWATT218 TO-247 Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC = 25°C 10 10 (*) 10 (*) 10 A ID Drain Current (continuos) at TC = 100°C 5.7 5.7 (*) 5.7 (*) 5.7 A IDM (l ) Drain Current (pulsed) 36 36 (*) 36 (*) 36 A PTOT Total Dissipation at TC = 25°C 115 35 35 156 W Derating Factor 0.92 0.28 0.28 1.25 W/°C VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ) dv/dt (1) Peak Diode Recovery voltage slope 4000 VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature V 4.5 - V/ns 2500 2000 - °C -55 to 150 ( l ) Pulse width limi ted by safe operating area (1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. V (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-pcb Thermal Resistance Junction-pcb Max D 2PAK TO-220FP 1.09 ISOWATT 218 3.6 TO-247 Unit 0.8 °C/W °C/W 60 (When mounted on minimum Footprint) Rthj-amb Tl Thermal Resistance Junction-ambient Max 62.5 Maximum Lead Temperature For Soldering Purpose °C/W 50 °C 300 AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 9 A 300 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 4.5 A V(BR)DSS 600 3 V 3.75 4.5 V 0.65 0.75 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) C iss Coss Crss C oss eq. (3) Parameter Test Conditions Forward Transconductance VDS = 15 V, ID = 4.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Equivalent Output Capacitance VGS = 0V, V DS = 0V to 480V Min. 7.8 S 1370 156 37 pF pF pF 90 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 4 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 20 20 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, I D = 8 A, VGS = 10V 50 10 25 70 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Condition s Min. td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, I D = 4 A R G = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 55 30 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 8 A, R G = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 18 18 36 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 10 A, V GS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8 A, di/dt = 100A/µs VDD = 40V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 570 4.3 15 Max. Unit 10 36 A A 1.6 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Safe Operating Area For TO-247 Thermal Impedance For TO-247 4/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI Safe Operating Area For ISOWATT218 Thermal Impedance For ISOWATT218 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 5/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature 6/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI Maximum Avalanche Energy vs Temperature 7/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 8/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 0.027 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 9/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L5 L2 10/16 L4 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 11/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 12/16 1 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 13/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI TO-247 MECHANICAL DATA DIM. mm. MIN. MAX. MIN. A 4.85 5.15 0.19 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 TYP. F1 3 0.11 F2 2 0.07 MAX. F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 14/16 TYP inch 3.55 3.65 0.14 0.143 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A TAPE MECHANICAL DATA mm MIN. MAX. inch MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D D1 1.5 1.59 1.6 1.61 0.059 0.063 0.062 0.063 E F 1.65 11.4 1.85 11.6 0.065 0.073 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 P2 11.9 1.9 12.1 2.1 0.468 0.476 0.075 0.082 R T 50 0.25 1.574 0.35 0.0098 0.0137 W 23.7 24.3 DIM. * on sales type B C 1.5 12.8 D 20.2 G 24.4 N T 100 MAX. 330 13.2 inch MIN. MAX. 12.992 0.059 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 0.933 0.956 15/16 STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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