SLUS339A – JUNE 1993 – REVISED MAY 2001 FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors. The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time. This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1610 in ceramic is designed for –55°C to 125°C environments but with reduced peak current capability. The UC2610 in plastic and ceramic is designed for –25°C to 125°C environments also with reduced peak current capability; while the UC3610 in plastic has higher current rating over a 0°C to 70°C temperature range. AVAILABLE OPTIONS Packaged Devices TA = TJ SOIC Wide (DW) DIL (J) DIL (N) –55°C to 125°C UC1610DW UC1610J UC1610N –25°C to 125°C UC2610DW UC2610J UC2610N 0°C to 70°C UC3610DW UC3610J UC3610N Copyright 2001, Texas Instruments Incorporated !"# $"%&! '#( '"! ! $#!! $# )# # #* "# '' +,( '"! $!# - '# #!# &, !&"'# # - && $## ( www.ti.com 1 SLUS339A – JUNE 1993 – REVISED MAY 2001 N OR J PACKAGE TOP VIEW DW PACKAGE TOP VIEW absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Peak forward current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ Consult packaging section of databook for thermal limitations and considerations of package. electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ, (except as noted) PARAMETER TEST CONDITIONS MIN TYP Forward voltage drop IF = 100 mA IF = 1 A Leakage ccurrent rrent VR = 40 V VR = 40 V, Reverse recovery 0.5 A forward to 0.5 A reverse 15 Forward recovery 1 A forward to 1.1 V recovery 30 Junction capacitance TJ = 100°C MAX 0.35 0.5 0.7 0.8 1.0 1.3 V 0.01 0.1 mA 0.1 1.0 mA VR = 5 V 70 NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes. 2 www.ti.com UNITS V ns ns pF SLUS339A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION FORWARD CURRENT vs VOLTAGE 1000 5.0 500 3.0 2.0 300 200 1.0 T J = 125 °C 100 Forward Current – A 50 30 20 10 5 0.3 0.2 0.05 0.03 0.02 T J = 25 °C 0.005 3 2 T J = 125 °C 0.003 0.002 0.001 1 0 10 20 30 40 0 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage – V Reverse Voltage – V Figure 1 Figure 2 REVERSE RECOVERY CHARACTERISTICS FORWARD RECOVERY CHARACTERISTICS I F = 0.5 A TA= 25 °C 1.1 V Diode Voltage 1.0 V/DIV Diode Current 200 mA DIV T J = –55 °C 0.1 0.01 T J = 25 °C T J = 75 °C 0.5 0A IR= 0.5 A TA= 25 °C Diode Voltage TFR (6 ns) 0A IF = 1 A Diode Current 500 mA DIV Leakage Current – µA REVERSE CURRENT vs VOLTAGE Diode Current TRR (4.6 ns) 0A Time, 2 ns/DIV Time, 2 ns/DIV Figure 4 Figure 3 www.ti.com 3 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. 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