DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1741TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA1741TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain 1 0.8 ±0.2 0.05 ±0.05 +0.10 –0.05 4 Power HSOP8 0.12 M 1.1 ±0.2 1 2.9 MAX. µPA1741TP 0.10 S 1.27 TYP. 0.40 2.0 ±0.2 PACKAGE 4.4 ±0.15 0.15 S ORDERING INFORMATION PART NUMBER 6.0 ±0.3 4 5.2 +0.17 –0.2 +0.10 –0.05 1.49 ±0.21 • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.79 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low input capacitance Ciss = 340 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • Small and surface mount package (Power HSOP8) 1.44 TYP. FEATURES 9 4.1 MAX. 8 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted. All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±5.0 A ID(pulse) ±15 A PT1 21 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Note2 Channel Temperature Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Repetitive Avalanche Current Note4 Repetitive Pulse Avalanche Energy Notes 1. 2. 3. 4. Note4 PT2 1 W Tch 150 °C Tstg −55 to +150 °C IAS 5.0 A EAS 2.5 mJ IAR 5.0 A EAR 2.5 mJ EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source PW ≤ 10 µs, Duty Cycle ≤ 1% Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Tch(peak) ≤ 150°C, L = 100 µH Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16373EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2003 µ PA1741TP ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted. All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 4.5 V | yfs | VDS = 10 V, ID = 2.5 A 2 3.5 RDS(on) VGS = 10 V, ID = 2.5 A 0.63 Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Ω 0.79 Input Capacitance Ciss VDS = 10 V 340 pF Output Capacitance Coss VGS = 0 V 70 pF Reverse Transfer Capacitance Crss f = 1 MHz 30 pF Turn-on Delay Time td(on) VDD = 125 V, ID = 2.5 A 11 ns tr VGS = 10 V 8 ns td(off) RG = 10 Ω 20 ns 6 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 200 V 11 nC Gate to Source Charge QGS VGS = 10 V 2 nC QGD ID = 5.0 A 5.5 nC VF(S-D) IF = 5.0 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 5.0 A, VGS = 0 V 120 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 400 nC Gate to Drain Charge Body Diode Forward Voltage Note 1.5 V Note Pulsed: PW ≤ 800 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet G16373EJ1V0DS td(on) tr ton td(off) tf toff µ PA1741TP TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 20 15 10 5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse) = 15 A PW = 100 µs I D (D C ) = 5.0 A 10 1 ms 1 10 m s DC R D S(on) Lim ited (at V G S = 10 V) 0.1 Power Dissipation Lim ited 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A T C = 25°C Single pulse Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 5.95°C/W Single pulse Rth(ch-A):Mounted on glass epoxy board (1 inch x 1inch x 0.8 mm), TA = 25°C Rth(ch-C):TC = 25°C 1 0.1 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16373EJ1V0DS 3 µ PA1741TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 20 100 Pu lsed V D S = 10 V 10 ID - Drain Current - A ID - Drain Current - A Pulsed VGS = 10 V 15 10 5 1 T A = 150°C 125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0001 0 0 5 10 15 0 20 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 4.5 V DS = 10 V ID = 1 mA 4 3.5 3 2.5 2 -25 0 25 50 75 100 125 150 100 V D S = 10 V Pulsed 10 1 T A = −25°C 25°C 75°C 125°C 150°C 0.1 0.01 0.01 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.3 Pulsed V GS = 10 V 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 1 10 10 100 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.3 Pulsed 1.2 1.1 1 ID = 5 A 2.5 A 1A 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 2 4 6 8 10 12 14 16 18 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω Tch - Channel Temperature - °C 1.2 15 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V -50 10 Data Sheet G16373EJ1V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 2 1000 V G S = 10 V Pulsed 1.75 Ciss, Coss, Crss - Capacitance - pF 1.5 1.25 ID = 5.0 A 1 0.75 2.5 A 0.5 C iss 100 C o ss 10 C rss VGS = 0 V f = 1 MHz 0.25 1 0 -50 -25 0 25 50 75 0.1 100 125 150 1 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 2 50 100 DD==125 125VV VVDD 10VV VVGGSS==10 RRGG==00ΩΩ t d(off) t d(on) 10 tr tf 1 15 I D = 5 .0 A 2 00 12 V D D = 2 00 V 1 25 V 6 2.5 V 1 50 9 1 00 6 VGS VDS 50 3 0 0.1 1 10 0 100 0 ID - Drain Current - A 1 2 3 4 5 6 7 8 9 10 11 12 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 Pulsed V GS = 0 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 10 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω µ PA1741TP 10 1 0.1 di/dt = 100 A/µs VGS = 0 V 100 10 1 0.01 0 0.25 0.5 0.75 1 1.25 1.5 0.1 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet G16373EJ1V0DS 5 µ PA1741TP SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 VDD = 125 V RG = 25 Ω VGS = 20 → 0 V IAS = 5.0 A 1 0.1 0.01 Energy Derating Factor - % IAS - Single Avalanche Current - A 10 EAS = 2.5 mJ 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 V DD = 125 V R G = 25 Ω V G S = 20 → 0 V I AS ≤ 5.0 A Data Sheet G16373EJ1V0DS µ PA1741TP • The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1