ETC 2SC3357(NE85634)

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
• Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3357
25 pcs (Non reel)
• 12 mm wide embossed taping
2SC3357-T1
1 kpcs/reel
• Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
IC
100
mA
1.2
W
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark • shows major revised points.
 NEC Compound Semiconductor Devices 1985, 2003
2SC3357
THERMAL RESISTANCE
Parameter
Symbol
Junction to Ambient Resistance
Rth (j-a)
Note
Value
Unit
62.5
°C/W
2
Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
–
–
1.0
µA
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
–
–
1.0
µA
VCE = 10 V, IC = 20 mA
50
120
250
–
VCE = 10 V, IC = 20 mA
–
6.5
–
GHz
S21e
VCE = 10 V, IC = 20 mA, f = 1 GHz
–
9.0
–
dB
Noise Figure (1)
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
–
1.1
–
dB
Noise Figure (2)
NF
VCE = 10 V, IC = 40 mA, f = 1 GHz
–
1.8
3.0
dB
VCB = 10 V, IE = 0 mA, f = 1 MHz
–
0.65
1.0
pF
hFE
DC Current Gain
Note 1
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Reverse Transfer Capacitance
Cre
Note 2
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
hFE CLASSIFICATION
2
Rank
RH
RF
RE
Marking
RH
RF
RE
hFE Value
50 to 100
80 to 160
125 to 250
Data Sheet PU10211EJ01V0DS
2SC3357
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (W)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2
Ceramic substrate
16 cm2 × 0.7 mm (t)
1
Free air Rth (j-a) 312.5˚C/W
0
25
50
75
100
125
150
1
0.5
0.3
0.2
0.5
1
2
5
10
20 30
Collector to Base Voltage VCB (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product fT (GHz)
VCE = 10 V
100
50
20
10
0.5
1
5
10
VCE = 10 V
5
3
2
1
0.5
0.3
0.2
0.1
0.1
50
0.5
1
5
10
50 100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
25
15
MAG
Insertion Power Gain |S21e|2 (dB)
DC Current Gain hFE
f = 1 MHz
Ambient Temperature TA (˚C)
200
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
2
20
|S21e|2
15
10
5
VCE = 10 V
IC = 20 mA
0
0.05
0.1
0.2
0.5
1
VCE = 10 V
f = 1 GHz
10
2
Frequency f (GHz)
5
0
0.5
1
5
10
50 70
Collector Current IC (mA)
Data Sheet PU10211EJ01V0DS
3
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1 GHz
Noise Figure NF (dB)
6
5
4
3
2
1
0
0.5
1
5
10
50 70
2nd Order Intermodulation Distortion IM2 (dBc)
3rd Order Intermodulation Distortion IM3 (dBc)
2SC3357
IM2, IM3 vs. COLLECTOR CURRENT
100
VCE = 10 V
Vo = 100 dBµV/50 Ω
Rg = Re = 50 Ω
IM2 : f = 90 + 100 MHz
IM3 : f = 2 × 200 – 190 MHz
90
80
IM3
70
60
IM2
50
40
30
Collector Current IC (mA)
20
30
40
50
60
70
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10211EJ01V0DS
2SC3357
SMITH CHART
S11e, S22e-FREQUENCY
CONDITION : VCE = 10 V
60
1.4
1.2
1.0
0.9
0.1
6
0.3
4
70
1.6
0.6
2.0
5
0.
0.4
4
0.
0
3.
30
C
0.6
O
0.8
0
1.
6.0
0.3
0.6
20
0
1.
5.0
)
1.0
E
NC
TA X
AC −J––O–
RE
–Z
4.0
0.8
(
0
0.6
E
IV
AT
3.
0
−4
NE
G
0.4
5
0.
0. 31
19
2.0
1.8
1.6
1.4
0.35
0.15
−70
1.2
4
0.3
6
0.1
0.36
0.14
−80
1.0
0
0.8
3
0.3 7
0.2
−6
0.9
0.1
0.38
0.39
0.12
0.11
−100
−90
0.37
0.13
0
−11
0.40
0.10
0.4
0.0 2
8
0
−1
2
0.4
1
0.0
9
0.
4
0. 3
07
30
−1
0.6
32
18
0.
0.
0
0.7
−5
0.
0.3
0.2 0
0
S21e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
S12e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
120˚
10
5.0
4.0
3.0
1.8
2.0
1.2
0.7
0.8
0.6
0.5
0.4
1.6
0.1
0.3
1.4
10
f = 2.0 GHz
30
4
0.27
0.2
0
.2
8
3
0
0.2
.2
2
9
−20
0.2
1
−
S22e
8
0.
−10
0.6
0.2
: IC = 20 mA
: IC = 40 mA
0.26
0.24
f = 0.2 GHz
0.4
f = 0.2 GHz
0.
50
20
0.9
1.0
)
50
0.2
(
0
REACTANCE COMPONENT
R
––––
0.2
ZO
20
0.25
0.25
0.2
f = 20 GHz
0.4
WAVELE
0.2
0.8
10
S11e
0.1
0.3
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
4.0
0
1.
1
0.2
9
0.2
( –Z–+–J–XTANCE CO
) MPO
N
50
0
0.2 0
0.3
T
EN
0.
18
32
0.
1.8
0.2
0.1
0.3 7
3
40
NGTH
0
S
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.0 GENE
0.01
7
0.48
3
RA
0.4
0.0W2ARD LOADLECTION COEF
FCIENT
0.4
0.0TOR
3 HS TO LE OF REF
6
I
7
N
.0
DEG
0NGT ANG
4
0.4
R
0
E
E
0.4
ES
6
L
0
.0W4AVE −1
0.0
6
0
5
15
0
0.4 5
0.4 5
0
15
0
−
.
5
0
0.
4
0
4
POS
T
0.1
14 0.4 6
0. 06
ITIV
NEN
40
0
ER
4
PO
M
0. −1
E
A
CO
0.15
0.35
19
0. 31
0.
07
0. 3
4
0. 0
13
0.14
0.36
80
90
0.7
8
0.0 2
0.4 20
1
0.13
0.37
0.12
0.38
0.11
0.39
100
0.10
0.40
110
0.8
9
0.0
1
0.4
90˚
120˚
60˚
f = 0.2 GHz
60˚
f = 2.0 GHz
S21e
150˚
30˚
150˚
30˚
S12e
f = 2.0 GHz
180˚
f = 0.2 GHz
3
6
9
–150˚
12 15
0˚ 180˚
–30˚
–60˚
–120˚
0.1
0.2
0.3
–150˚
0.4 0.5
0˚
–30˚
–60˚
–120˚
–90˚
–90˚
Data Sheet PU10211EJ01V0DS
5
2SC3357
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
1.5±0.1
0.8 MIN.
C
E
B
0.42±0.06
4.0±0.25
2.5±0.1
1.6±0.2
0.42±0.06
0.47±0.06
1.5
3.0
PIN CONNECTIONS
E : Emitter
C : Collector (Fin)
B : Base
(IEC : SOT-89)
6
Data Sheet PU10211EJ01V0DS
0.41+0.03
–0.06
2SC3357
• The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10211EJ01V0DS
7
2SC3357
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0209