DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate) • Small package : 3-pin power minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3357 25 pcs (Non reel) • 12 mm wide embossed taping 2SC3357-T1 1 kpcs/reel • Collector face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V IC 100 mA 1.2 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10211EJ01V0DS (1st edition) (Previous No. P10357EJ4V1DS00) Date Published January 2003 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 1985, 2003 2SC3357 THERMAL RESISTANCE Parameter Symbol Junction to Ambient Resistance Rth (j-a) Note Value Unit 62.5 °C/W 2 Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA – – 1.0 µA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA – – 1.0 µA VCE = 10 V, IC = 20 mA 50 120 250 – VCE = 10 V, IC = 20 mA – 6.5 – GHz S21e VCE = 10 V, IC = 20 mA, f = 1 GHz – 9.0 – dB Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.65 1.0 pF hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE CLASSIFICATION 2 Rank RH RF RE Marking RH RF RE hFE Value 50 to 100 80 to 160 125 to 250 Data Sheet PU10211EJ01V0DS 2SC3357 TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (W) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 Ceramic substrate 16 cm2 × 0.7 mm (t) 1 Free air Rth (j-a) 312.5˚C/W 0 25 50 75 100 125 150 1 0.5 0.3 0.2 0.5 1 2 5 10 20 30 Collector to Base Voltage VCB (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 Gain Bandwidth Product fT (GHz) VCE = 10 V 100 50 20 10 0.5 1 5 10 VCE = 10 V 5 3 2 1 0.5 0.3 0.2 0.1 0.1 50 0.5 1 5 10 50 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT 25 15 MAG Insertion Power Gain |S21e|2 (dB) DC Current Gain hFE f = 1 MHz Ambient Temperature TA (˚C) 200 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 2 20 |S21e|2 15 10 5 VCE = 10 V IC = 20 mA 0 0.05 0.1 0.2 0.5 1 VCE = 10 V f = 1 GHz 10 2 Frequency f (GHz) 5 0 0.5 1 5 10 50 70 Collector Current IC (mA) Data Sheet PU10211EJ01V0DS 3 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1 GHz Noise Figure NF (dB) 6 5 4 3 2 1 0 0.5 1 5 10 50 70 2nd Order Intermodulation Distortion IM2 (dBc) 3rd Order Intermodulation Distortion IM3 (dBc) 2SC3357 IM2, IM3 vs. COLLECTOR CURRENT 100 VCE = 10 V Vo = 100 dBµV/50 Ω Rg = Re = 50 Ω IM2 : f = 90 + 100 MHz IM3 : f = 2 × 200 – 190 MHz 90 80 IM3 70 60 IM2 50 40 30 Collector Current IC (mA) 20 30 40 50 60 70 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ 4 Data Sheet PU10211EJ01V0DS 2SC3357 SMITH CHART S11e, S22e-FREQUENCY CONDITION : VCE = 10 V 60 1.4 1.2 1.0 0.9 0.1 6 0.3 4 70 1.6 0.6 2.0 5 0. 0.4 4 0. 0 3. 30 C 0.6 O 0.8 0 1. 6.0 0.3 0.6 20 0 1. 5.0 ) 1.0 E NC TA X AC −J––O– RE –Z 4.0 0.8 ( 0 0.6 E IV AT 3. 0 −4 NE G 0.4 5 0. 0. 31 19 2.0 1.8 1.6 1.4 0.35 0.15 −70 1.2 4 0.3 6 0.1 0.36 0.14 −80 1.0 0 0.8 3 0.3 7 0.2 −6 0.9 0.1 0.38 0.39 0.12 0.11 −100 −90 0.37 0.13 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 −1 0.6 32 18 0. 0. 0 0.7 −5 0. 0.3 0.2 0 0 S21e-FREQUENCY CONDITION : VCE = 10 V, IC = 20 mA S12e-FREQUENCY CONDITION : VCE = 10 V, IC = 20 mA 90˚ 120˚ 10 5.0 4.0 3.0 1.8 2.0 1.2 0.7 0.8 0.6 0.5 0.4 1.6 0.1 0.3 1.4 10 f = 2.0 GHz 30 4 0.27 0.2 0 .2 8 3 0 0.2 .2 2 9 −20 0.2 1 − S22e 8 0. −10 0.6 0.2 : IC = 20 mA : IC = 40 mA 0.26 0.24 f = 0.2 GHz 0.4 f = 0.2 GHz 0. 50 20 0.9 1.0 ) 50 0.2 ( 0 REACTANCE COMPONENT R –––– 0.2 ZO 20 0.25 0.25 0.2 f = 20 GHz 0.4 WAVELE 0.2 0.8 10 S11e 0.1 0.3 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 4.0 0 1. 1 0.2 9 0.2 ( –Z–+–J–XTANCE CO ) MPO N 50 0 0.2 0 0.3 T EN 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 40 NGTH 0 S 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF FCIENT 0.4 0.0TOR 3 HS TO LE OF REF 6 I 7 N .0 DEG 0NGT ANG 4 0.4 R 0 E E 0.4 ES 6 L 0 .0W4AVE −1 0.0 6 0 5 15 0 0.4 5 0.4 5 0 15 0 − . 5 0 0. 4 0 4 POS T 0.1 14 0.4 6 0. 06 ITIV NEN 40 0 ER 4 PO M 0. −1 E A CO 0.15 0.35 19 0. 31 0. 07 0. 3 4 0. 0 13 0.14 0.36 80 90 0.7 8 0.0 2 0.4 20 1 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.8 9 0.0 1 0.4 90˚ 120˚ 60˚ f = 0.2 GHz 60˚ f = 2.0 GHz S21e 150˚ 30˚ 150˚ 30˚ S12e f = 2.0 GHz 180˚ f = 0.2 GHz 3 6 9 –150˚ 12 15 0˚ 180˚ –30˚ –60˚ –120˚ 0.1 0.2 0.3 –150˚ 0.4 0.5 0˚ –30˚ –60˚ –120˚ –90˚ –90˚ Data Sheet PU10211EJ01V0DS 5 2SC3357 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (UNIT: mm) 4.5±0.1 1.5±0.1 0.8 MIN. C E B 0.42±0.06 4.0±0.25 2.5±0.1 1.6±0.2 0.42±0.06 0.47±0.06 1.5 3.0 PIN CONNECTIONS E : Emitter C : Collector (Fin) B : Base (IEC : SOT-89) 6 Data Sheet PU10211EJ01V0DS 0.41+0.03 –0.06 2SC3357 • The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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