Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.0±0.1 ● 0.8±0.1 0.2–0.05 ■ Features 0.4 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics +0.1 0.15–0.05 0 to 0.1 (Ta=25˚C) 0.45±0.1 0.3 ■ Absolute Maximum Ratings 0.75±0.15 2 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : K (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 Forward current transfer ratio hFE* VCE = 10V, IC = 1mA 70 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz *h FE V 250 230 MHz 1.3 pF Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 Marking Symbol KB KC 1 Transistor 2SC4655 PC — Ta IC — VCE 12 Ta=25˚C 10 100 75 50 25 8 60µA 6 40µA 4 20µA 80 100 120 140 160 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 50 40 25˚C 30 –25˚C 20 10 0 0.4 0.8 1.2 12 18 1.6 2.0 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 fT — IE 10 30 Reverse transfer impedance Zrb (Ω) 400 VCB=10V 6V 200 100 –1 –3 –10 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.1 0.3 –30 Emitter current IE (mA) –100 70 60 50 40 VCB=6V 10V 20 10 0 – 0.1 – 0.3 –1 3 10 30 100 Cre — VCE f=2MHz Ta=25˚C 30 1 Collector current IC (mA) Zrb — IE 500 180 VCE=10V 100 80 Ta=25˚C 120 300 IC/IB=10 Collector current IC (mA) 600 0 – 0.1 – 0.3 60 Base current IB (µA) hFE — IC 100 Base to emitter voltage VBE (V) 300 0 VCE(sat) — IC 60 0 4 Collector to emitter voltage VCE (V) IC — VBE Ta=75˚C 6 0 0 Forward current transfer ratio hFE 60 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 40 8 2 0 20 Ambient temperature Ta (˚C) Collector current IC (mA) 10 80µA 2 0 Transition frequency fT (MHz) VCE=10V Ta=25˚C IB=100µA Collector current IC (mA) 125 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 150 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC4655 Cob — VCB bie — gie 1.2 1.0 0.8 0.6 0.4 Reverse transfer susceptance bre (mS) 1.4 0 yie=gie+jbie VCE=10V Input susceptance bie (mS) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 100 10 6 25 4 10.7 IE=– 0.1mA –1mA –2mA –4mA –7mA 2 f=0.45MHz 0 1 3 10 30 0 100 Collector to base voltage VCB (V) 4 8 25 100 58 –1mA –4mA 58 10.7 100 100 58 25 –60 58 IE=–7mA –80 –100 40 –4mA 100 –2.5 IE=–7mA –3.0 – 0.5 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) –7mA 0.8 58 60 80 Forward transfer conductance 100 gfe (mS) –4mA –2mA –1mA – 0.4mA 0.6 25 IE=– 0.1mA 0.4 10.7 0.2 yoe=goe+jboe VCE=10V f=0.45MHz 0 20 –2mA –2.0 100 1.0 yfe=gfe+jbfe VCE=10V –120 0 –1mA f=0.45MHz 10.7 25 100 – 0.4mA –1.5 1.2 0.45 10.7 –2mA –40 20 58 –1.0 boe — goe Output susceptance boe (mS) – 0.1mA –20 – 0.4mA 16 Input conductance gie (mS) bfe — gfe 0 12 f=0.45MHz 10.7 25 yre=gre+jbre VCE=10V – 0.5 58 8 0.2 0 Forward transfer susceptance bfe (mS) bre — gre 12 1.6 0 0.2 0.4 0.6 0.8 1.0 Output conductance goe (mS) 3