2SC5881 Transistors Power transistor (60V, 5A) 2SC5881 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features 1) High speed switching. (Tf : Typ. : 25ns at IC = 5A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 3.0A, IB = 300mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2096 (x1 / 2) Each lead has same dimensions Symbol : C5881 !Applications Low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Taping TL Code Basic ordering unit (pieces) 2500 2SC5881 !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit VCBO 100 V VCES 100 V VCEO 60 V VEBO 6.5 V DC IC 5.0 A Pulsed ICP 10.0 A 1.0 W 10.0 W Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation PC Junction temperature Tj 150 °C Tstg −55 to 150 °C Range of storage temperature ∗1 ∗2 ∗3 ∗1 Pw=10ms, non repetitive pulse ∗2 Ta=25°C ∗3 Tc=25°C 1/3 2SC5881 Transistors !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCES BVCBO BVEBO ICBO IEBO Min. 60 100 100 6.5 − − Typ. − − − − − − Max. − − − − 1.0 1.0 Unit V V V V µA µA Collector-emitter saturation voltage VCE (sat) − 200 400 mV hFE 120 − 560 − fT − 160 − MHz Corrector output capacitance Cob − 30 − pF Turn-on time Storage time Fall time Ton Tstg Tf − − − 70 150 25 − − − ns ns ns Collector-emitter breakdown voltage DC current gain Transition frequency Condition IC=1mA IC=100µA IC=100µA IE=100µA VCB=40V VEB=4V IC=3.0A IB=300mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=5A IB1=500mA IB2= −500mA VCC 25V ∗1 ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits !hFE RANK Q 120−270 R 180−390 S 270−560 !Electrical characteristic curves 1 DC 0.1 Single non repetitive Pulsed 0.01 0.01 0.1 1 10 Ton 100 Tf 10 0.01 100 0.1 1 1000 100 Ta=125°C Ta=25°C Ta= −40°C 10 1 0.001 10 VCE=2V 0.01 0.1 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) 100 VCE=5V VCE=3V VCE=2V 10 1 0.001 10 Ta=25°C 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 10 1 0.1 0.01 0.001 10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) 100ms 10ms 1ms 500µs COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) 10 Ta=25°C VCC=25V IC / IB=10 / 1 Tstg DC CURRENT GAIN : hFE 1000 100 Ta=125°C Ta=25°C Ta= −40°C 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 10 Ta=25°C 1 IC / IB=20 / 1 IC / IB=10 / 1 0.1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 2/3 2SC5881 Transistors 1 Ta=125°C Ta=25°C Ta= −40°C 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=125°C Ta=25°C Ta= −40°C 0.1 0 0.5 1 1000 Ta=25°C VCE=10V 100 10 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current 1000 1 0.01 10 VCE=2V TRANSITION FREQUENCY : fT (MHz) 10 IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) 10 1 0.001 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency Ta=25°C f=1MHz 100 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance !Switching characteristics measurement circuits RL=5Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle ≤ 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf 3/3