Transistors 2SD0973A (2SD973A) Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) R 0.9 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 3 2 (2.5) 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • Low collector-emitter saturation voltage VCE(sat) • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (0.4) 6.9±0.1 ■ Features 1 (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package cm2 Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Forward current transfer ratio *1 hFE1 *2 hFE2 Conditions Min VCE = 10 V, IC = 500 mA 85 VCE = 5 V, IC = 1 A 50 Typ Max Unit V 0.1 µA 340 Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base-emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 20 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00203CED 1 2SD0973A IC VCE Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.25 Collector current IC (A) 1.0 0.8 0.6 0.4 6 mA 5 mA 0.75 4 mA 3 mA 0.50 2 mA 40 60 0 80 100 120 140 160 2 10 Base-emitter saturation voltage VBE(sat) (V) −25°C 0.01 1 2 75°C 0.1 0.1 1 Collector output capacitance C (pF) (Common base, input open circuited) ob 140 120 100 80 60 40 20 −100 300 Ta = 75°C 200 25°C −25°C 100 1 10 VCER RBE 120 30 20 10 10 Collector-base voltage VCB (V) SJC00203CED 0.1 Collector current IC (A) IE = 0 f = 1 MHz Ta = 25°C 1 12 400 0 0.01 10 40 0 10 500 Cob VCB 160 8 VCE = 10 V Collector current IC (A) 50 6 hFE IC Ta = −25°C 1 4 600 25°C fT I E Emitter current IE (mA) 0 Base current IB (mA) IC / IB = 10 0.01 0.01 10 200 V = 10 V CB T = 25°C 180 a −10 0 10 10 Collector current IC (A) 0 −1 0.4 VBE(sat) IC Ta = 75°C 25°C 0.1 8 100 1 0.001 0.01 6 0.6 Collector-emitter voltage VCE (V) IC / IB = 10 0.1 4 Forward current transfer ratio hFE 20 0.8 0.2 1 mA 0 0 VCE = 10 V Ta = 25°C 8 mA 7 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 1.0 1.00 Ambient temperature Ta (°C) Transition frequency fT (MHz) IB = 10 mA 9 mA 0.25 0.2 2 Ta = 25°C 1.2 Collector-emitter voltage V (V) (Resistor between B and E) CER Collector current PC (W) 1.2 0 IC I B 1.50 Collector current IC (A) PC Ta 1.4 100 IC = 10 mA Ta = 25°C 100 80 60 40 20 0 0.1 1 10 100 Base-emitter resistance RBE (kΩ) 2SD0973A ICEO Ta 104 Safe operation area 10 VCE = 10 V Single pulse Ta = 25°C ICP Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 1 t = 10 ms IC t=1s 0.1 0.01 0.001 0.1 1 10 100 Collector-emitter voltage VCE (V) SJC00203CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL