2SD1163, 2SD1163A Silicon NPN Triple Diffused ADE-208-909 (Z) 1st. Edition Sep. 2000 Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Symbol 2SD1163 2SD1163A Unit Collector to base voltage VCBO 300 350 V Collector to emitter voltage VCEO 120 150 V Emitter to base voltage VEBO 6 6 V Collector current IC 7 7 A Collector peak current I C (peak) 10 10 A Collector surge current I C (surge) 20 20 A 40 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) 2SD1163 2SD1163A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector cutoff current I CBO — — 5 — — — mA VCB = 300 V, IE = 0 — — — — — 5 mA VCB = 350 V, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 — — 150 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — 6 — — V I E = 10 mA, IC = 0 DC current transfer ratio hFE 25 — — 25 — — Collector to emitter saturation voltage VCE (sat) — — 2.0 — — 1.0 V I C = 5 A, IB = 0.5 A*1 Base to emitter saturation voltage VBE (sat) — — 1.2 — — 1.2 V I C = 5 A, IB = 0.5 A*1 Fall time tf — — 0.5 — — 0.5 µs I CP = 3.5 A, I B1 = 0.45 A Note: 2 1. Pulse test. VCE = 5 V, IC = 5 A*1 2SD1163, 2SD1163A Maximum Collector Dissipation Curve Area of Safe Operation 40 10 3 1.0 (150 V, 0.5 A) 0.3 2SD1163 0.01 0 50 100 Case temperature TC (°C) 0.6 0.4 0.2 8 6 4 2 mA IB = 0 0 500 10 TC = 25°C 2 4 6 8 10 Collector to emitter voltage VCE (V) VCE = 5 V DC current transfer ratio hFE Collector current IC (A) 0.8 12 30 100 300 1,000 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 1.0 2SD1163A (350 V, 5 mA) 10 150 ng (120 V, 0.9 A) rci eA b Tu 20 (40 V, 20 A) e tur Pic Collector current IC (A) 50 30 r Fo Collector power dissipation PC (W) 60 200 TC = 75°C 100 50 25°C –25°C 20 10 5 0.1 0.2 5 0.5 1.0 2 Collector current IC (A) 10 3 4 Collector to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 2SD1163, 2SD1163A 3 IC/IB = 10 75°C 2 1 TC = –25°C, 25°C 0 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 10 1.5 IC/IB= 10 1.0 TC = –25°C 75°C 25°C 0.5 0 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 10 2SD1163, 2SD1163A Package Dimensions Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) TO-220AB Conforms Conforms 1.8 g 5 2SD1163, 2SD1163A Cautions 1. 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