Transistor 2SD1996 Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 0.8 0.15 0.7 ● 0.85 +0.1 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 ● 14.5±0.5 ● 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.45–0.05 ● 1.0 ■ Features 3.5±0.1 For low-voltage output amplification For muting For DC-DC converter 2 3 (Ta=25˚C) 2.5±0.1 ■ Absolute Maximum Ratings 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 ■ Electrical Characteristics (HW type) (Ta=25˚C) Parameter Symbol Conditions min typ Unit 100 nA ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 hFE1*1 VCE = 2V, IC = 0.5A*2 200 hFE2 VCE = 2V, IC = 1A*2 60 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 50mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f= 1MHz ON resistanse Ron*3 Forward current transfer ratio VCB = 25V, IE = 0 max Collector cutoff current V 800 0.13 0.4 1.2 MHz 10 pF Ω *2 *1h FE1 Rank classification Rank hFE1 R 200 ~ 350 V 200 1.0 *3R on V Measurement circuit Pulse measurement 1kΩ IB=1mA S 300 ~ 500 T 400 ~ 800 VB VV VA f=1kHz V=0.3V VB Ron= ✕1000(Ω) VA–VB 1 2SD1996 Transistor PC — Ta IC — VCE 700 500 400 300 200 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 100 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 6 30 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.1 0.3 1 3 800 Ta=75˚C 600 25˚C –25˚C 400 200 0.1 0.3 1 3 10 Collector current IC (A) 1000 8 Ron measuring circuit IB=1mA 300 ON resistance Ron (Ω) 12 VB 100 V 30 VA f=1kHz V=0.3V 10 3 1 4 0.3 0 10 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 VCB=10V Ta=25˚C 350 300 250 200 150 100 0.1 0.01 0.03 0.1 0.3 1 3 Base current IB (mA) 0 –1 –3 –10 –30 Emitter current IE (A) Ron — IB 16 3 Ta=75˚C 0.3 50 0 0.01 0.03 10 IE=0 f=1MHz Ta=25˚C 1 1 400 Cob — VCB 20 3 VCE=2V Collector current IC (A) 24 10 fT — I E 1000 10 0.01 0.01 0.03 30 Collector current IC (A) 1200 Forward current transfer ratio hFE IC/IB=10 1 IC/IB=25 hFE — IC 100 3 100 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Ta=25˚C 3.5mA 1.0 600 Collector to emitter saturation voltage VCE(sat) (V) IB=4.0mA 0 2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (mW) 800 10 –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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