ETC 2SJ181(L)|2SJ181(S)

2SJ181(L), 2SJ181(S)
Silicon P-Channel MOS FET
ADE-208-1183 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
1
2
3
2 3
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ181(L), 2SJ181(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–600
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–0.5
A
–1.0
A
–0.5
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–600
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±15
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±12 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–100
µA
VDS = –500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–2.0
—
–4.0
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
RDS(on)
—
15
25
Forward transfer admittance
|yfs|
0.3
0.45
—
S
I D = –0.3 A, VDS = –20 V*1
Input capacitance
Ciss
—
220
—
pF
VDS = –10 V, VGS = 0,
Output capacitance
Coss
—
55
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
13
—
pF
Turn-on delay time
t d(on)
—
7
—
ns
I D = –0.3 A, VGS = –10 V,
Rise time
tr
—
20
—
ns
RL = 100
Turn-off delay time
t d(off)
—
35
—
ns
Fall time
tf
—
35
—
ns
Body to drain diode forward
voltage
VDF
—
–0.85
—
V
I F = –0.5 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
230
—
ns
I F = –0.5 A, VGS = 0,
diF/dt = 50 A/µs
Note:
2
1. Pulse test
I D = –0.3 A, VGS = –10 V*1
2SJ181(L), 2SJ181(S)
Power vs. Temperature Derating
Maximum Safe Operation Area
I D (A)
–10
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
–3
10 µs
10
0µ
PW
s
1m
D
=1
–0.3
C
s
0
Op
era ms
(1s
t
Operation in
ion
–0.1
h
(T
this area is
c = ot)
2
limited by R DS(on)
5
–1
°C
)
–0.03
Ta = 25 °C
0
50
100
150
Case Temperature
–0.01
–10
200
Typical Output Characteristics
(A)
–6 V
ID
–0.6
–5 V
–0.4
–4.5 V
–0.2
VGS = –4 V
0
–500 –1000
V DS (V)
Typical Transfer Characteristics
–10
–20
–30
Drain to Source Voltage
–40
–50
V DS (V)
Drain Current
I D (A)
Drain Current
–0.8
–100 –200
–0.5
Pulse Test
–10 V
–50
Drain to Source Voltage
Tc (°C)
–1.0
–20
–0.4
–0.3
Tc = –25 °C
75 °C
25 °C
–0.2
–0.1
V DS = –20 V
Pulse Test
0
–2
–4
–6
Gate to Source Voltage
–8
–10
V GS (V)
3
2SJ181(L), 2SJ181(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–16
–12
I D = –0.5 A
–8
Drain to Source On State Resistance
R DS(on) ( Ω )
–0.2 A
–4
–0.1 A
0
–4
–8
12
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
VGS = –10 V
20
10
–15 V
5
–0.02
–0.05 –0.1
–0.2
Drain Current
4
Pulse Test
–0.5
I D (A)
–1
–2
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Drain to Source Saturation Voltage
V DS(on) (V)
–20
–16
–20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
VGS = –10 V
32
I D = –0.5 A
24
–0.2 A
16
–0.1 A
8
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
2
1
0.5
0.2
Forward Transfer Admittance vs.
Drain Current
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Forward Transfer Admittance |y fs | (S)
2SJ181(L), 2SJ181(S)
Tc = –25 °C
25 °C
75 °C
0.1
0.05
V DS = –20 V
Pulse Test
0.02
–0.05 –0.1 –0.2
–0.5 –1 –2
Drain Current I D (A)
500
200
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25 °C
10
–0.05 –0.1 –0.2
–0.5 –1 –2
–5
Reverse Drain Current I DR (A)
–5
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
1000
VGS = 0
f = 1 MHz
300
Ciss
100
Coss
30
10
Crss
3
1
0
–10
–20
–30
-40
–50
Drain to Source Voltage V DS (V)
5
2SJ181(L), 2SJ181(S)
–200
–400
–4
–8
V DS
–600
V GS
V DD = –100 V
–250 V
–400 V
–12
–800
–16
I D = –0.5 A
–1000
0
4
8
12
16
Gate Charge Qg (nc)
–20
20
Switching Characteristics
500
Switching Time t (ns)
V GS = –10 V, V DD = –30 V
PW = 5 µs, duty < 1 %
200
100
50
20
10
tf
t d(off)
tr
t d(on)
5
–0.05 –0.1 –0.2
–0.5 –1 –2
Drain Current I D (A)
6
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
0
V DD = –100 V
–250 V
–400 V
V GS (V)
Dynamic Input Characteristics
0
–5
2SJ181(L), 2SJ181(S)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
–1.0
Pulse Test
–0.8
–0.6
–0.4
V GS = –10 V
0, 5 V
–0.2
0
–0.2
–0.4
–0.6
Source to Drain Voltage
–0.8
–1.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
0.3
0.1
0.03
D=1
0.5
0.2
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25 °C/W, Tc = 25 °C
0.02
1
0.0
t
ho
lse
PDM
Pu
1s
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
7
2SJ181(L), 2SJ181(S)
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
RL
90%
Vin
–10 V 50Ω
V DD
= –30 V
Vout
td(on)
8
90%
90%
10%
10%
tr
td(off)
tf
2SJ181(L), 2SJ181(S)
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
2.29 ± 0.5
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
9
2SJ181(L), 2SJ181(S)
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
DPAK (S)-(1),(2)
—
Conforms
0.28 g
2SJ181(L), 2SJ181(S)
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