2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET ADE-208-1241 (Z) 1st. Edition Mar. 2001 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D 1 2 3 1. Gate 2. Source (Flange) 3. Drain G S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK213 Symbol Ratings Unit VDSX 140 V 2SK214 160 2SK215 180 2SK216 200 Gate to source voltage VGSS ±15 V Drain current ID 500 mA Body to drain diode reverse drain current I DR 500 mA Channel dissipation Pch 1.75 W Pch* 30 W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C 1 Note: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions V(BR)DSX 140 — — V I D = 1 mA, VGS = –2 V Drain to source 2SK213 breakdown voltage 2SK214 160 — — V 2SK215 180 — — V 2SK216 200 — — V Gate to source breakdown voltag V(BR)GSS ±15 — — V I G = ±10 µA, VDS = 0 Gate to source voltage VGS(on) 0.2 — 1.5 V I D = 10 mA, VDS = 10 V *1 Drain to source saturation voltage VDS(sat) — — 2.0 V I D = 10 mA, VGD = 0 *1 Forward transfer admittance |yfs| 20 40 — mS I D = 10 mA, VDS = 20 V *1 Input capacitance Ciss — 90 — pF I D = 10 mA, VDS = 10 V, Reverse transfer capacitance Crss — 2.2 — pF f = 1 MHz Note: 2 1. Pulse test 2SK213, 2SK214, 2SK215, 2SK216 Typical Output Characteristics Power vs. Temperature Derating 500 40 20 TC = 25°C 400 2.5 300 2.0 200 1.5 100 0 150 Typical Transfer Characteristics Typical Output Characteristics 30 20 0.8 0.7 0.6 0.5 0.4 10 0.3 0.2 400 VDS = 20 V TC 40 TC = 25°C 500 Drain Current ID (mA) 50 4 8 16 20 12 Drain to Source Voltage VDS (V) 25° C 25 75 50 100 Case Temperature TC (°C) 1.0 VGS = 0.5 V =– 0 Drain Current ID (mA) 3.5 3.0 Drain Current ID (mA) Channel Dissipation Pch (W) 60 300 200 100 VGS = 0.1V 0 60 20 40 80 100 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate Source Voltage VGS (V) 5 3 2SK213, 2SK214, 2SK215, 2SK216 80 VDS = 20 V TC = –25 °C 25 75 Drain Current ID (mA) 100 Forward Transfer Admittance yfs (mS) Typical Transfer Characteristics 60 40 20 1.2 0.4 0.8 1.6 Gate Source Voltage VGS (V) Forward Transfer Admittance yfs (mS) 0 4 2.0 Forward Transfer Admittance vs. Drain Current 200 100 50 20 10 TC = 25°C VDS = 20 V 5 2 5 20 10 50 100 200 Drain Current ID (mA) Forward Transfer Admittance vs. Frequency 500 100 10 TC = 25°C VDS = 20 V ID = 10 mA 1.0 0.1 0.05 5 k 10 k 1M 10 M 100 k Frequency f (HZ) 50 M 2SK213, 2SK214, 2SK215, 2SK216 Package Dimensions As of January, 2001 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) TO-220AB Conforms Conforms 1.8 g 5 2SK213, 2SK214, 2SK215, 2SK216 Cautions 1. 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