APT1101R2BFLL
APT1101R2SFLL
1100V 10A 1.200W
POWER MOS 7TM
FREDFET
BFLL
D3PAK
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
APT1101R2
Parameter
UNIT
L
A
C
I
N
H
C N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
1100
Drain-Source Voltage
Volts
10
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
298
Watts
Linear Derating Factor
2.83
W/°C
VGSM
PD
TJ,TSTG
40
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
10
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1100
Volts
10
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
1.20
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
050-7185 Rev - 4-2002
Symbol
APT1101R2 BFLL - SFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
2170
Coss
Output Capacitance
VDS = 25V
329
Crss
Reverse Transfer Capacitance
f = 1 MHz
62
Qg
Total Gate Charge
VGS = 10V
80
Q gs
Gate-Source Charge
VDD = 0.5 VDSS
Q gd
Gate-Drain ("Miller ") Charge
11
50
t d(on)
3
ID = ID [Cont.] @ 25°C
L
A
C
I
N
H
C N
E
T
O
I
E AT
C
N RM
A
V FO
D
A
IN
Turn-on Delay Time
tr
Turn-off Delay Time
tf
12
VDD = 0.5 VDSS
7
ID = ID [Cont.] @ 25°C
35
RG = 1.6Ω
15
Rise Time
t d(off)
VGS = 15V
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
TYP
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
dv/
MIN
Peak Diode Recovery
dt
1
(Body Diode)
2
dv/
dt
(VGS = 0V, IS = -ID [Cont.])
5
MAX
10
UNIT
Amps
40
1.3
Volts
18
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
210
Tj = 125°C
710
Qrr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
.07
Tj = 125°C
2.0
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
15
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.42
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 24.20mH, R = 25Ω, Peak I = 10A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS ≤ -ID[Cont.] di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Drain
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-7185 Rev - 4-2002
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated