APT5024BLL
APT5024SLL
500V 22A 0.240W
POWER MOS 7TM
BLL
D3PAK
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SLL
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5024
UNIT
500
Volts
Drain-Source Voltage
22
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
265
Watts
Linear Derating Factor
2.12
W/°C
VGSM
PD
TJ,TSTG
88
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
22
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
960
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
22
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.24
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
UNIT
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-7050 Rev A 2-2002
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT5024 BLL - SLL
Characteristic
MIN
Test Conditions
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
1895
2300
Coss
Output Capacitance
VDS = 25V
419
630
Reverse Transfer Capacitance
f = 1 MHz
27
50
Crss
Qg
Total Gate Charge
Q gs
3
VGS = 10V
43
70
VDD = 0.5 VDSS
12
15
ID = ID[Cont.] @ 25°C
24
40
VGS = 15V
8
16
Gate-Source Charge
Q gd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
VDD = 0.5 VDSS
6
12
ID = ID[Cont.] @ 25°C
18
27
RG = 1.6Ω
2
5
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
Characteristic / Test Conditions
22
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
88
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
Q
rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
dt
Peak Diode Recovery dv/dt
dv/
516
Amps
Volts
ns
7
5
UNIT
µC
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.47
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 3.97mH, R = 25Ω, Peak I = 22A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
D=0.5
0.1
0.2
0.1
0.05
0.01
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7050 Rev A 2-2002
0.5
0.01
t1
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
10
Typical Preformance Curves
60
Graph Deleted
ID, DRAIN CURRENT (AMPERES)
VGS=15 &10V
50
8V
40
7.5V
30
7V
20
6.5V
10
6V
5.5V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
50
40
30
20
TJ = +125°C
10
TJ = -55°C
TJ = +25°C
0
0
1 2
3 4 5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
1.6
V
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
= 0.5 I
D
V
GS
D
1.4
1.3
VGS=10V
1.2
VGS=20V
1.1
1.0
0.9
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50
[Cont.]
= 10V
2.0
1.5
1.0
0.5
0.0
-50
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
GS
1.5
1.15
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.7
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7050 Rev A 2-2002
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
APT5024 BLL - SLL
10,000
88
5,000
100µS
10
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1,000
Coss
100
Crss
10mS
1
1
10
100
10
.01
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
D
VDS=100V
VDS=250V
12
VDS=400V
8
4
0
0
10
20
30
40
50
60
70
80
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Drain
10
50
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
Drain
(Heat Sink)
D PAK Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
1
100
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
.1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-7050 Rev A 2-2002
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated