APT60M80JVR
600V 55A 0.080Ω
POWER MOS V ®
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Popular SOT-227 Package
• Avalanche Energy Rated
D
• Faster Switching
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT60M80JVR
UNIT
600
Volts
Drain-Source Voltage
55
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
568
Watts
Linear Derating Factor
4.54
W/°C
VGSM
PD
TJ,TSTG
220
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
55
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
Volts
55
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.080
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
TYP
050-7251 Rev A 8-2002
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
TYP
MAX
VGS = 0V
12022
14500
Output Capacitance
VDS = 25V
1571
2200
Reverse Transfer Capacitance
f = 1 MHz
668
1010
Ciss
Input Capacitance
Coss
Crss
Qg
Total Gate Charge
Qgs
APT60M80JVR
3
VGS = 10V
576
870
VDD = 0.5 VDSS
56
68
ID = 0.5 ID[Cont.] @ 25°C
288
440
VGS = 15V
15
30
VDD = 0.5 VDSS
25
50
ID = ID[Cont.] @ 25°C
73
110
31
40
TYP
MAX
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
MIN
Ω
RG = 0.6Ω
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
Continuous Source Current
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
MIN
55
(Body Diode)
220
(Body Diode)
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs)
937
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
29
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case
.22
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.51mH, R = 25Ω, Peak I = 65A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
0.05
D=0.5
0.2
0.1
0.05
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7251 Rev A 8-2002
0.25
0.02
0.005
0.01
t2
SINGLE PULSE
0.001
10-5
t1
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
UNIT
°C/W
Typical Performance Curves
APT60M80JVR
180
6.5V
Graph Deleted
ID, DRAIN CURRENT (AMPERES)
160
15 &10V
6V
140
120
100
5.5V
80
5V
60
40
4.5V
20
4V
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
200
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
140
120
100
80
60
TJ = +125°C
40
20
TJ = +25°C
TJ = -55°C
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.1
VGS=10V
1.0
VGS=20V
0.9
0.8
0
5
10
15
20
25
30
35
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3
I
D
= 0.5 I
D
V
GS
1.05
1.00
0.95
0.90
0.85
-50
[Cont.]
= 10V
2.5
2
1.5
1.0
0.5
0.0
-50
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7251 Rev A 8-2002
ID, DRAIN CURRENT (AMPERES)
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
APT60M80JVR
70,000
220
100
100µS
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
1mS
10
10mS
10,000
5000
Coss
1000
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
100
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Crss
500
I = I [Cont.]
D
D
VDS=100V
12
VDS=250V
8
VDS=400V
4
0
0
10
20 30 40 50 60 70 80 90
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
050-7251 Rev A 8-2002
Hex Nut M4
(4 places)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
1.95 (.077)
2.14 (.084)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058