BC307B, BC307C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –50 Vdc Emitter-Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD 350 2.8 mW mW/°C 1.0 8.0 Watts mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 357 °C/W Thermal Resistance, Junction to Case RθJC 125 °C/W Operating and Storage Junction Temperature Range COLLECTOR 1 2 BASE 3 EMITTER THERMAL CHARACTERISTICS Characteristic 1 2 3 CASE 29 TO–92 STYLE 17 ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 2 1 Package Shipping BC307B TO–92 5000 Units/Box BC307BRL1 TO–92 2000/Tape & Reel BC307BZL1 TO–92 2000/Ammo Pack BC307C TO–92 5000 Units/Box Publication Order Number: BC307/D BC307B, BC307C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max –45 — — –5.0 — — — — –0.2 –0.2 –15 –4.0 BC307B BC307C — — 150 270 — — (IC = –2.0 mAdc, VCE = –5.0 Vdc) BC307 BC307B BC307C 120 200 420 — 290 500 800 460 800 (IC = –100 mAdc, VCE = –5.0 Vdc) BC307B BC307C — — 180 300 — — — — — –0.10 –0.30 –0.25 –0.3 –0.6 — — — –0.7 –1.0 — — –0.55 –0.62 –0.7 — 280 — — — 6.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO Emitter–Base Breakdown Voltage (IE = –100 Adc, IC = 0) V(BR)EBO Collector–Emitter Leakage Current (VCES = –50 V, VBE = 0) (VCES = –50 V, VBE = 0) TA = 125°C Vdc Vdc ICES nAdc µA ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) — Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT Common Base Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Ccbo Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) MHz NF dB — 2.0 1. IC = –10 mAdc on the constant base current characteristic, which yields the point I C = –11 mAdc, VCE = –1.0 V. http://onsemi.com 2 pF 10 BC307B, BC307C TYPICAL CHARACTERISTICS -1.0 VCE = -10 V TA = 25°C 1.5 -0.9 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 10 400 300 Cib 7.0 200 VCE = -10 V TA = 25°C 150 100 80 -50 -100 Figure 2. “Saturation” and “On” Voltages C, CAPACITANCE (pF) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 60 40 5.0 TA = 25°C 3.0 Cob 2.0 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current–Gain — Bandwidth Product 0.3 r b′, BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = -10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 -10 150 140 130 VCE = -10 V f = 1.0 kHz TA = 25°C 120 110 100 -0.1 Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 -10 BC307B, BC307C PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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