BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power amplifiersfor DECT and PCN systems at collector currents between 20 mA and 80 mA up to 2 GHz 2 Low noise figure High transition frequency fT = 7.5 GHz Excellent large signal behaviour 1 3 1 4 4 1 3 4 3 13628 BFP196T Marking: 196 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 2 13629 BFP196TR Marking: R96 Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 13632 BFP196TW Marking: W96 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Document Number 85091 Rev. 2, 29–Jul–02 Test Conditions Tamb 60 °C Type Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 100 500 150 –65 to +150 Unit V V V mA mW °C °C www.vishay.com 1 (5) BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Maximum Thermal Resistance Tamb = 25°C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35µm Cu Symbol RthJA Value 180 Unit K/W Electrical DC Characteristics Tamb = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 70 mA, IB = 7 mA VCE = 8 V, IC = 50 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE Min. Typ. Max. 100 100 1 0.1 100 0.5 150 12 50 Unit µA nA µA V V Electrical AC Characteristics Tamb = 25°C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Transducer gain Third order intercept point at output www.vishay.com 2 (5) Test Conditions Symbol VCE = 8 V, IC = 50 mA, f = 1 GHz fT VCB = 10 V, f = 1 MHz Ccb VCE = 10 V, f = 1 MHz Cce VEB = 0.5 V, f = 1 MHz Ceb VCE = 8 V, IC = 20 mA, ZS = ZSopt, F ZL = 50 , f = 900 MHz VCE = 8 V, IC = 20 mA, ZS = ZSopt, F ZL = 50 , f = 2 GHz VCE = 8 V, IC = 50 mA, ZS = ZSopt, Gpe ZL = 50 , f = 900 MHz VCE = 8 V, IC = 50 mA, ZS = ZSopt, Gpe ZL = 50 , f = 2 GHz VCE = 8 V, IC = 50 mA, Z0 = 50 , S21e2 f = 900 MHz VCE = 8 V, IC = 50 mA, Z0 = 50 , S21e2 f = 2 GHz VCE = 8 V, IC = 50 mA, f = 900 MHz IP3 Min. 6 Typ. 7.5 1.0 0.3 3.5 1.5 Max. 1.4 Unit GHz pF pF pF dB 2.5 dB 16 dB 10 dB 12.5 dB 6.5 dB 36 dBm Document Number 85091 Rev. 2, 29–Jul–02 BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Dimensions of BFP196T in mm 96 12240 Dimensions of BFP196TR in mm 96 12239 Document Number 85091 Rev. 2, 29–Jul–02 www.vishay.com 3 (5) BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Dimensions of BFP196TW in mm 96 12237 www.vishay.com 4 (5) Document Number 85091 Rev. 2, 29–Jul–02 BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85091 Rev. 2, 29–Jul–02 www.vishay.com 5 (5)