ON Semiconductor BU208A Horizontal Deflection Transistor 5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1C/W Increased Reliability Glass Passivated (Patented Photoglass). Triple Diffused Mesa Technology for Long Term Stability ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol BU208A Unit Collector–Emitter Voltage Rating VCEO(sus) 700 Vdc Collector–Emitter Voltage VCES 1500 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous — Peak IC ICM 5.0 7.5 Vdc Base Current — Continuous — Peak (Negative) IB IBM 4.0 3.5 Adc Total Power Dissipation @ TC = 95C Derate above 95C PD 12.5 0.625 Watts W/C TJ, Tstg –65 to +115 C Symbol Max Unit RθJC 1.6 C/W TL 275 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purpose, 1/8″ from Case for 5 Seconds NOTES: 1. Pulsed 5.0 ms, Duty Cycle 10%. 2. See page 3 for Additional Ratings on A Type. 3. Figures in ( ) are Standard Ratings ON Semiconductor Guarantees are Superior. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 1 Publication Order Number: BU208A/D BU208A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 700 — — Vdc ICES — — 1.0 mAdc 5 — — 7 — — hFE 2.25 — — Collector–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 2 Adc) VCE(sat) — — 1 Vdc Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 2 Adc) VBE(sat) — — 1.5 Vdc fT — 4 — MHz Cob — 125 — pF Storage Time (see test circuit fig. 1) (IC = 4.5 Adc, IB1 = 1.8 Adc, LB = 10 µH) ts — 8 — µs Fall time (see test circuit fig. 1) (IC = 4.5 Adc, IB1 = 1.8 Adc, LB = 10 µH) tf — 0.4 — µs OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, L = 25 mH) Collector Cutoff Current1 (VCE = rated VCES, VBE = 0) ALL TYPES Emitter Base Voltage1 (IC = 0, IE = 10 mAdc) (IC = 0, IE = 100 mAdc) VEBO Vdc ON CHARACTERISTICS1 DC Current Gain (IC = 4.5 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 0.1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) SWITCHING CHARACTERISTICS 1Pulse test: PW = 300 µs; Duty cycle 2%. http://onsemi.com 2 BU208A +40 V 7 mH +40 V 0.5 µF 1K 250 µF 400 mA 1K 6.5 mH Ly = 1.3 mH 1 µF 1N5242 (12 V) 100 Ω 10 K LB 3 1 TBA920 14 10 nF 2 15 820 220 680 nF 10 nF MPSU04 RB 0.56 1A 1500 V 22 nF 22 nF T.U.T. 680 µF 10 K 16 100 2K7 3K3 Figure 1. Switching Time Test Circuit 80 POWER DISSIPATION (W) 2K 60 40 20 0 40 80 120 TC, CASE TEMPERATURE (°C) Figure 2. Power Derating http://onsemi.com 3 160 200 0.3 A FUSE 130 V POWER SUPPLY BU208A BASE DRIVE The Key to Performance By now, the concept of controlling the shape of the turn–off base current is widely accepted and applied in horizontal deflection design. The problem stems from the fact that good saturation of the output device, prior to turn–off, must be assured. This is accomplished by providing more than enough IB1 to satisfy the lowest gain output device hFE at the end of scan ICM. Worst–case component variations and maximum high voltage loading must also be taken into account. If the base of the output transistor is driven by a very low impedance source, the turn–off base current will reverse very quickly as shown in Figure 3. This results in rapid, but only partial collector turn–off, because excess carriers become trapped in the high resistivity collector and the transistor is still conductive. This is a high dissipation mode, since the collector voltage is rising very rapidly. The problem is overcome by adding inductance to the base circuit to slow the base current reversal as shown in Figure 4, thus allowing access carrier recombination in the collector to occur while the base current is still flowing. Choosing the right LB Is usually done empirically since the equivalent circuit is complex, and since there are several important variables (ICM, IB1, and hFE at ICM). One method is to plot fall time as a function of L B, at the desired conditions, for several devices within the hFE specification. A more informative method is to plot power dissipation versus I B1 for a range of values of L B. This shows the parameter that really matters, dissipation, whether caused by switching or by saturation. For very low LB a very narrow optimum is obtained. This occurs when IB1 hFE ICM, and therefore would be acceptable only for the “typical” device with constant ICM. As LB is increased, the curves become broader and flatter above the IB1. hFE = ICM point as the turn off “tails” are brought under control. Eventually, if LB is raised too far, the dissipation all across the curve will rise, due to poor initiation of switching rather than tailing. Plotting this type of curve family for devices of different hFE, essentially moves the curves to the left, or right according to the relation IB1 hFE = constant. It then becomes obvious that, for a specified ICM, an LB can be chosen which will give low dissipation over a range of hFE and/or IB1. The only remaining decision is to pick IB1 high enough to accommodate the lowest hFE part specified. Neither LB nor IB1 are absolutely critical. Due to the high gain of ON Semiconductor devices it is suggested that in general a low value of IB1 be used to obtain optimum efficiency — eg. for BU208A with ICM = 4.5 A use IB1 1.5 A, at ICM = 4 A use IB1 1.2 A. These values are lower than for most competition devices but practical tests have showed comparable efficiency for ON Semiconductor devices even at the higher level of IB1. An LB of 10 µH to 12 µH should give satisfactory operation of BU208A with ICM of 4 to 4.5 A and IB1 between 1.2 and 2 A. TEST CIRCUIT WAVEFORMS IB IB IC IC (TIME) (TIME) Figure 3. Figure 4. TEST CIRCUIT OPTIMIZATION power input can be caused by a variety of problems, but it is the dissipation in the transistor that is of fundamental importance. Once the required transistor operating current is determined, fixed circuit values may be selected. The test circuit may be used to evaluate devices in the conventional manner, i.e., to measure fall time, storage time, and saturation voltage. However, this circuit was designed to evaluate devices by a simple criterion, power supply input. Excessive http://onsemi.com 4 BU208A hFE, DC CURRENT GAIN 13 VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) 14 VCE = 5 V 12 11 10 9 8 7 6 5 4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (A) 5.0 10 0.5 0.4 0.3 IC/IB = 3 0.2 0.1 0 0.1 Figure 5. DC Current Gain VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) VBE, BASE-EMITTER VOLTAGE (V) 1.6 1.4 1.3 1.2 1.1 IC/IB = 2 0.9 0.8 0.7 0.6 0.1 0.2 0.5 1.0 2.0 10 5.0 2.4 IC = 2 A IC, COLLECTOR CURRENT (A) ICM(max.) 0.2 0.1 0.05 TC ≤ 95°C BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT DUTY CYCLE ≤ 1% 0.02 0.01 0.005 0.002 0.001 1 2 5 10 20 50 100 200 IC = 4 A 1.6 IC = 4.5 A 1.2 0.8 0.4 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT CONTINUOUS (A) Figure 8. Collector Saturation Region 1 ms 2 ms D.C. BU208,A1 500 1000 10 IC = 3.5 A 1 µs 2 5 10 20 50 100 200 300 IC(max.) 0.5 5.0 IC = 3 A 2.0 Figure 7. Base–Emitter Saturation Voltage 2 1 0.5 1.0 2.0 IC, COLLECTOR CURRENT (A) 2.8 0.1 IC, COLLECTOR CURRENT (A) 15 10 5 0.2 Figure 6. Collector–Emitter Saturation Voltage 1.5 1.0 IC/IB = 2 2000 1Pulse VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 9. Maximum Forward Bias Safe Operating Area http://onsemi.com 5 width ≤ 20 µs. Duty cycle ≤ 0.25. RBE ≤ 100 Ohms. 10 BU208A PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N C –T– E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 BU208A Notes http://onsemi.com 7 BU208A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 BU208A/D