ETC BU2722DX

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for
operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
VBE = 0 V
PINNING - SOT399
PIN
base
2
collector
3
emitter
ICsat = 4.5 A; IB(end) = 0.7 A
PIN CONFIGURATION
DESCRIPTION
1
Ths ≤ 25 ˚C
IC = 4.5 A; IB = 1.0 A
case isolated
TYP.
MAX.
UNIT
4.5
1.9
1700
825
10
25
45
1
2.25
V
V
A
A
W
V
A
µs
SYMBOL
case
c
b
Rbe
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1700
825
10
25
10
20
150
20
45
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN.
MAX.
UNIT
-
10
kV
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
1 Turn-off current.
January 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
TYP.
MAX.
UNIT
-
3.7
K/W
-
2.8
K/W
35
-
K/W
TYP.
MAX.
UNIT
2500
V
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
-
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
85
7.5
13.5
65
0.87
1.6
19
7
150
1.0
0.96
mA
V
Ω
V
V
V
TYP.
MAX.
UNIT
1.9
0.4
2.25
0.48
µs
µs
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
REB
VCEsat
VBEsat
VF
hFE
hFE
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
VEB = 7.5 V
IC = 4.5 A; IB = 1.0 A
IC = 4.5 A; IB = 1.0 A
IF = 4.5 A
IC = 1.0 A; VCE = 5 V
IC = 4.5 A; VCE = 1 V
0.79
14
4.5
26
10
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ts
tf
PARAMETER
CONDITIONS
Switching times (64 kHz line
deflection circuit)
ICsat = 4.5 A; LC = 260 µH;
Cfb = 4.8 nF; VCC = 160 V;
IB(end) = 0.7 A; LB = 0.6 µH; -VBB = 2 V;
Turn-off storage time
Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
January 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU2722DX
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IBend
IB
t
5us
D.U.T.
6.5us
LB
IBend
Cfb
16us
VCE
-VBB
Rbe
t
Fig.1. Switching times waveforms (64 kHz).
Fig.3. Switching times test circuit.
ICsat
hFE
BU2720/22DF
100
90 %
VCE = 5 V
Ths = 25 C
Ths = 85 C
IC
10 %
tf
10
t
ts
IB
IBend
t
1
0.01
- IBM
Fig.2. Switching times definitions.
January 1997
0.1
1
10
IC / A
100
Fig.4. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
hFE
BU2722DX
ts, tf / us
BU2720/22DF
VCE = 1 V
BU2722AF
10
100
Ths = 25 C
Ths = 85 C
1
10
0.1
1
0.01
0.1
1
10
IC / A
100
Fig.5. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
VCEsat / V
0
1
2
3
4
IB / A
Fig.8. Limit storage and fall time.
ts = f (IB); tf = f (IB); Ths = 85˚C; f = 64 kHz
BU2722DF
Normalised Power Derating
PD%
120
10
with heatsink compound
110
Ths = 85 C
Ths = 25 C
100
90
80
70
1
60
IC/IB = 8
50
IC/IB = 4
40
0.1
30
20
10
0
0.01
0.1
1
10
IC / A
0
100
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBEsat / V
BU2722DF
10
IC = 5.5 A
1
0.9
0.1
0.8
60
80
Ths / C
0.5
1
140
0.5
0.2
0.1
0.05
1.5
IB / A
D=0
0.001
1E-06
2
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
January 1997
120
Zth / (K/W)
PD
0.01
0.7
0
100
0.02
4.5 A
0.6
40
Fig.9. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
1
Ths = 85 C
Ths = 25 C
20
tp
D=
t
T
1E-04
1E-02
t/s
tp
T
1E+00
Fig.10. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722DX
VCC
IC / A
26
24
22
20
18
16
14
12
10
8
6
4
2
0
100
LC
VCL
IBend
LB
T.U.T.
-VBB
CFB
Area where
fails occur
1000
1700
VCE / V
Fig.11. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;
CFB = 1 - 6 nF; IB(end) = 0.7 - 4 A
January 1997
BU2720AF/DF
Fig.12. Reverse bias safe operating area. Tj ≤ Tjmax
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722DX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
0.95 max
5.45
5.45
3.3
Fig.13. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 1997
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1997
7
Rev 1.000