ETC BUK9107

BUK91/9907-55ATE
TrenchPLUS logic level FET
Rev. 01 — 7 February 2002
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9107-55ATE in SOT426 (D2-PAK)
BUK9907-55ATE in SOT263B.
2. Features
■
■
■
■
Typical on-state resistance 5.8 mΩ
Q101 compliant
ESD protection
Monolithically integrated temperature sensor for overload protection.
3. Applications
■ Automotive and power switching:
◆ 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS))
◆ Protected drive for lamps.
4. Pinning information
Table 1:
Pinning - SOT426 and SOT263B simplified outline and symbol
Pin
Description
1
gate (g)
2
anode (a)
3
drain (d)
4
cathode (k)
5
source (s)
mb
mounting base;
connected to drain (d)
Simplified outline
Symbol
mb
d
a
s
k
mb
g
1 2 3 4 5
MBL317
Front view
SOT426 (D2-PAK)
MBK127
1
5
MBL263
SOT263B
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj = 25 °C
-
55
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V
-
140
A
Ptot
total power dissipation
Tmb = 25 °C
-
272
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj = 25 °C; VGS = 5 V; ID = 50 A
5.8
7
mΩ
Tj = 25 °C; VGS = 4.5 V; ID = 50 A
6
7.7
mΩ
Tj = 25 °C; VGS = 10 V; ID = 50 A
5.2
6.2
mΩ
VF
temperature sense diode forward
voltage
Tj = 25 °C; IF = 250 µA
658
668
mV
SF
temperature sense diode temperature
coefficient
−55 °C < Tj < 175 °C; IF = 250 µA
−1.54
−1.68
mV/K
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
2 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
6. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage (DC)
VDGS
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Min
Max
Unit
-
55
V
-
55
V
[1]
-
±15
V
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
[2]
-
140
A
[3]
-
75
A
Tmb = 100 °C; VGS = 5 V; Figure 2
[3]
-
75
A
IDM
drain current (peak value)
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
560
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
272
W
IGS(CL)
gate-source clamping current
continuous
-
10
mA
tp = 5 ms; δ = 0.01
-
50
mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage
-
±100
V
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
[2]
-
140
A
[3]
-
75
A
Source-drain diode
IDR
IDRM
reverse drain current (DC)
Tmb = 25 °C
pulsed reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
560
A
non-repetitive drain-source
clamping energy
unclamped inductive load; ID = 75 A;
VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω;
starting Tj = 25 °C
-
500
mJ
Human Body Model; C = 100 pF;
R = 1.5 kΩ
-
6
kV
Clamping
EDS(CL)S
Electrostatic discharge
Vesd
electrostatic discharge voltage;
pins 1, 3, 5
[1]
[2]
[3]
Voltage is limited by clamping
Current is limited by power dissipation chip rating
Continuous current is limited by package.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
3 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
03na19
120
03ne74
150
ID
Pder
(A)
125
(%)
80
100
75
Capped at 75 A due to package
40
50
25
0
0
0
50
100
150
200
Tmb ( C)
25
P tot
P der = ----------------------- × 100%
P
°
50
75
100
125
150
175
200
Tmb (oC)
VGS ≥ 5 V
tot ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
03nf55
103
ID
(A)
RDSon = VDS/ID
tp = 10 us
102
100 us
Capped at 75 A due to package
1 ms
DC
10 ms
10
100 ms
1
1
102
10
VDS (V)
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
4 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction to
ambient
vertical in still air; SOT263B
package
-
-
60
K/W
mounted on printed circuit board;
minimum footprint; SOT426
package
-
-
50
K/W
Figure 4
-
-
0.55
K/W
Rth(j-mb)
thermal resistance from junction to
mounting base
7.1 Transient thermal impedance
03ne76
1
Z th(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
δ=
P
10-2
0.02
Single Shot
tp
T
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
5 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
8. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = −55 °C
VGS(th)
IDSS
55
-
-
V
50
-
-
V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
Tj = 25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
-
V
Tj = −55 °C
-
-
2.3
V
Tj = 25 °C
-
0.1
10
µA
Tj = 175 °C
-
-
250
µA
VDS = 55 V; VGS = 0 V
V(BR)GSS
gate-source breakdown
voltage
IG = ±1 mA;
−55 °C < Tj < 175 °C
12
15
-
V
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
5
1000
nA
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 A;
Figure 7 and 8
-
5.8
7
mΩ
-
-
14
mΩ
Tj = 175 °C
VGS = 4.5 V; ID = 50 A
-
6
7.7
mΩ
VGS = 10 V; ID = 50 A
-
5.2
6.2
mΩ
VF
temperature sense diode
forward voltage
IF = 250 µA
648
658
668
mV
SF
temperature sense diode
temperature coefficient
IF = 250 µA;
−55 °C < Tj < 175 °C
−1.4
−1.54
−1.68
mV/K
Vhys
temperature sense diode
forward voltage hysteresis
125 µA < IF < 250 µA
25
32
50
mV
VGS = 5 V; VDD = 44 V;
ID = 50 A; Figure 14
-
108
-
nC
-
15
-
nC
-
47
-
nC
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
-
5836
-
pF
-
958
-
pF
-
595
-
pF
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
-
51
-
ns
-
202
-
ns
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-to-source charge
Qgd
gate-to-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
341
-
ns
tf
fall time
-
207
-
ns
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
6 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
Table 5:
Characteristics…continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ld
internal drain inductance
from upper edge of drain
mounting base to centre of
die
-
2.5
-
nH
Ls
internal source inductance
from source lead to source
bond pad
-
7.5
-
nH
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS = 0 V;
Figure 17
-
0.85
1.2
V
trr
reverse recovery time
-
85
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
-
250
-
nC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
7 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
03ne77
ID 400
(A)
350
4.2
6
03ne79
25
RDSon
(mΩ)
4.6
4.4
V GS = 5 V
20
300
4
10
250
3.8
15
3.6
200
3.4
150
10
3.2
3
100
2.8
50
2.6
2.4
2.2
0
0
2
4
6
8
5
0
2
10
VDS (V)
Tj = 25 °C; tp = 300 µs
4
6
8 V
10
GS (V)
Tj = 25 °C; ID = 50 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03ne89
2
handbook, halfpage
03ne78
16
RDSon
(mΩ)
VGS = 3 V
a
3.6
3.2
14
3.8
1.5
4
3.4
12
1
10
0.5
5
8
10
6
0
50
100
150
200
0
-60
250
300
ID (A)
Tj = 25 °C; tp = 300µs
60
120
Tj (˚C)
180
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
0
Rev. 01 — 7 February 2002
8 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
03na17
2.5
VGS(th)
(V)
2
03na18
10-1
ID
(A)
10-2
max
typ
10-3
1.5
min
1
10-4
0.5
10-5
min
typ
max
10-6
0
-60
-20
20
60
100
140
180
Tj (oC)
0
0.5
1
1.5
2
2.5
3
V
(V)
GS
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ne81
140
gfs
(S)
120
03ne86
16000
C (pF)
14000
12000
100
10000
80
8000
60
6000
Ciss
40
4000
20
2000
0
0
0
20
40
60
80 I (A) 100
D
Tj = 25 °C; VDS = 25 V
10-2
1
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
10-1
Coss
Crss
102
Rev. 01 — 7 February 2002
9 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
03ne80
100
ID
03nf65
5
(A)
VGS
(V)
80
4
VDS = 14 V
60
3
VDS = 44 V
Tj = 175 ºC
40
2
20
1
Tj = 25 ºC
0
0
0.0
1.0
2.0
VGS (V)
3.0
0
20
40
80
100
120
QG (nC)
Tj = 25 °C; ID = 50 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ne84
700
VF
(mV)
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03ne85
1.70
-SF
(mV/K)
1.65
600
max
1.60
typ
1.55
500
1.50
1.45
400
min
1.40
0
50
100
150
Tj (ºC)
200
IF = 250 µA
645
650
655
660
665
670
675
VF (mV)
VF at Tj = 25 °C; IF = 250 µA
Fig 15. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values.
Fig 16. Temperature coefficient of temperature sense
diode as a function of forward voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
60
Rev. 01 — 7 February 2002
10 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
03ne88
100
IS
(A)
80
Tj = 175 ºC
60
40
Tj = 25 ºC
20
0
0.0
0.5
1.0
VSD (V)
1.5
VGS = 0 V
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
11 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
9. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped)
SOT426
A
A1
E
D1
mounting
base
D
HD
3
1
2
4
e
e
Lp
5
b
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.70
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT426
Fig 18. SOT426.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
12 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
SOT263B
E
p1
A
∅p
A1
q
D1
mounting
base
D
L1
Q
L2
m
L
1
5
e
b
c
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
D1
E
e
L
mm
4.5
4.1
1.39
1.27
0.85
0.70
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
1.7
15.0
13.5
L1
(1)
2.4
1.6
(2)
L2
0.5
m
∅p
p1
q
Q
w
0.8
0.6
3.8
3.6
4.3
4.1
3.0
2.7
2.6
2.2
0.4
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
OUTLINE
VERSION
SOT263B
REFERENCES
IEC
JEDEC
EIAJ
5-lead TO-220
EUROPEAN
PROJECTION
ISSUE DATE
01-01-11
Fig 19. SOT263B.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
13 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
10. Soldering
10.85
10.60
10.50
handbook, full pagewidth
1.50
7.50
7.40
1.70
2.25 2.15
8.15
8.275
8.35
1.50
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
solder lands
1.70
(2×)
solder resist
3.40
0.90
1.00
8.15
MSD058
occupied area
solder paste
Dimensions in mm.
Fig 20. Reflow soldering footprint for SOT426.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
14 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
11. Revision history
Table 6:
Revision history
Rev Date
01
20020207
CPCN
Description
-
Product specification; initial version
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Product data
Rev. 01 — 7 February 2002
15 of 17
BUK91/9907-55ATE
Philips Semiconductors
TrenchPLUS logic level FET
12. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
13. Definitions
14. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Trademarks
— TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09138
Rev. 01 — 7 February 2002
16 of 17
Philips Semiconductors
BUK91/9907-55ATE
TrenchPLUS logic level FET
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Transient thermal impedance . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 7 February 2002
Document order number: 9397 750 09138