ETC BUL147/D

ON Semiconductor
BUL147
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
The BUL147 have an applications specific state–of–the–art die
designed for use in electric fluorescent lamp ballasts to 180 Watts and
in Switchmode Power supplies for all types of electronic equipment.
These high–voltage/high–speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current
•
•
Tail)
Parametric Distributions are Tight and Consistent Lot–to–Lot
Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
Rating
Symbol
BUL147
Unit
VCEO
400
Vdc
Collector–Emitter Breakdown Voltage
VCES
700
Vdc
Emitter–Base Voltage
VEBO
9.0
Vdc
Collector Current — Continuous
— Peak(1)
IC
ICM
8.0
16
Adc
Base Current — Continuous
— Peak(1)
IB
IBM
4.0
8.0
Adc
PD
125
1.0
Watts
W/°C
TJ, Tstg
– 65 to 150
°C
Collector–Emitter Sustaining Voltage
Total Device Dissipation
Derate above 25°C
(TC = 25°C)
Operating and Storage Temperature
BUL147
CASE 221A–09
TO–220AB
THERMAL CHARACTERISTICS
Symbol
BUL44
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
TL
260
°C
Rating
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 4
1
Publication Order Number:
BUL147/D
BUL147
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
ICEO
—
—
100
µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
(TC = 125°C)
ICES
—
—
—
—
—
—
100
500
100
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
—
—
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
VBE(sat)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
VCE(sat)
—
—
0.82
0.92
1.1
1.25
—
—
—
—
0.25
0.3
0.35
0.35
0.5
0.5
0.7
0.8
hFE
14
—
8.0
7.0
10
10
—
30
12
11
18
20
34
—
—
—
—
—
—
fT
—
14
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
100
175
pF
Input Capacitance (VEB = 8.0 V)
Cib
—
1750
2500
pF
(TC = 125°C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125°C)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25°C to 125°C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Dynamic Saturation VoltVolt
age:
Determined 1.0 µs and
3 0 µs respectively after
3.0
rising IB1 reaches 90% of
final IB1
(see Figure 18)
(IC = 2.0 Adc
IB1 = 200 mAdc
VCC = 300 V)
(IC = 5.0 Adc
IB1 = 0.9
0 9 Adc
VCC = 300 V)
1.0
µs
(TC = 125°C)
—
—
3.0
5.5
—
—
3.0
µs
(TC = 125°C)
—
—
0.8
1.4
—
—
3.3
8.5
—
—
0.4
1.0
—
—
VCE(dsat)
1.0
µs
(TC = 125°C)
—
—
3.0
µs
(TC = 125°C)
—
—
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
http://onsemi.com
2
Volts
BUL147
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
(IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc, VCC = 300 V)
ton
—
—
200
190
350
—
ns
toff
—
—
1.0
1.6
2.5
—
µs
ton
—
—
85
100
150
—
ns
toff
—
—
1.5
2.0
2.5
—
µs
tfi
—
—
100
120
180
—
ns
tsi
—
—
1.3
1.9
2.5
—
µs
tc
—
—
210
230
350
—
ns
tfi
—
—
80
100
150
—
ns
tsi
—
—
1.6
2.1
3.2
—
µs
tc
—
—
170
200
300
—
ns
tfi
60
—
—
150
180
—
ns
tsi
2.6
—
—
4.3
3.8
—
µs
tc
—
—
200
330
350
—
ns
(TC = 125°C)
Turn–Off Time
(TC = 125°C)
Turn–On Time
(IC = 4.5 Adc, IB1 = 0.9 Adc
IB1 = 2.25 Adc, VCC = 300 V)
(TC = 125°C)
Turn–Off Time
(TC = 125°C)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
(IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 2.25 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 0.9 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
http://onsemi.com
3
BUL147
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 1 V
TJ = 25°C
10
TJ = -20°C
1
0.01
1
0.1
VCE = 5 V
TJ = 125°C
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = -20°C
10
1
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
10
1.5
1
IC = 1 A
3A
5A
8A
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
TJ = 25°C
10 A
0.5
1
IC/IB = 10
0.1
IC/IB = 5
0
0.01
0.1
1
IB, BASE CURRENT (AMPS)
0.01
0.01
10
Figure 3. Collector Saturation Region
Cib
1.1
TJ = 25°C
f = 1 MHz
1000
1
C, CAPACITANCE (pF)
V BE , VOLTAGE (VOLTS)
10
10000
1.2
0.9
0.8
TJ = 25°C
0.6
IC/IB = 5
IC/IB = 10
0.5 TJ = 125°C
0.4
0.01
0.1
1
IC COLLECTOR CURRENT (AMPS)
Figure 4. Collector–Emitter Saturation Voltage
1.3
0.7
TJ = 25°C
TJ = 125°C
0.1
1
Cob
100
10
1
10
1
10
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
http://onsemi.com
4
100
BUL147
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
600
500
400
IC/IB = 5
IC/IB = 10
3000 I /I = 5
C B
TJ = 125°C
TJ = 25°C
300
200
2500
2000
1500
1000
100
0
1
3
2
4
5
1
4
5
6
7
Figure 8. Resistive Switching, toff
IC/IB = 5
4000
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
1500
500
TJ = 25°C
TJ = 125°C
2500
7
IC = 2 A
2000
1500
1000
0
8
IC = 4.5 A
3
Figure 9. Inductive Storage Time, tsi
4
5
6
7
8
9 10 11
hFE, FORCED GAIN
12
250
tc
200
t, TIME (ns)
tfi
150
100
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
50
1
2
4
5
6
15
150
100
50
TJ = 25°C
TJ = 125°C
3
14
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 25°C
TJ = 125°C
tc
200
13
Figure 10. Inductive Storage Time, tsi(hFE)
300
250
8
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
3000
500
IC/IB = 10
3
4
6
5
IC COLLECTOR CURRENT (AMPS)
2
TJ = 25°C
TJ = 125°C
3500
1000
t, TIME (ns)
3
Figure 7. Resistive Switching, ton
2000
0
2
IC, COLLECTOR CURRENT (AMPS)
2500
1
0
8
IC, COLLECTOR CURRENT (AMPS)
3000
t, TIME (ns)
7
6
3500
0
IC/IB = 10
500
t si , STORAGE TIME (ns)
0
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
TJ = 25°C
TJ = 125°C
3500
t, TIME (ns)
t, TIME (ns)
4000
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
0
7
tfi
1
2
3
4
5
6
7
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
http://onsemi.com
5
8
BUL147
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
t fi , FALL TIME (ns)
160
IC = 2 A
140
300
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 25°C
TJ = 125°C
120
100
80
60
IC = 4.5 A
3
4
5
6
7
8
9
10
11
12
13
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC = 2 A
TC , CROSSOVER TIME (ns)
180
200
150
IC = 4.5 A
100
50
15
14
250
TJ = 25°C
TJ = 125°C
3
4
5
6
7
8
9
10
11
12
13
14
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
15
GUARANTEED SAFE OPERATING AREA INFORMATION
9
DC (BUL147)
5 ms
10 µs
1 ms
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
100
1 µs
10
EXTENDED
SOA
1
0.1
0.01
10
100
7
6
5
4
3
-5 V
2
1
0
1000
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
8
VBE(off) = 0 V
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
POWER DERATING FACTOR
1.0
SECOND BREAKDOWN
DERATING
0.6
0.4
THERMAL DERATING
0.2
0.0
20
40
60
80
100
120
200
300
400
-1, 5 V
500
600
700
800
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
0.8
100
140
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC – VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty cycles
to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at any case
temperature by using the appropriate curve on Figure 17. TJ(pk) may
be calculated from the data in Figure 20 and NO TAG. At any case
temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sus160 tained simultaneously during turn–off with the base–to–emitter
junction reverse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an avalanche mode.
http://onsemi.com
6
BUL147
5
4
10
VCE
dyn 1 µs
3
8
VOLTS
2
tsi
7
dyn 3 µs
1
6
5
0
-1
-4
90% IB1
1
3 µs
0
1
2
3
4
TIME
5
6
7
0
8
Figure 18. Dynamic Saturation Voltage Measurements
1
2
3
4
TIME
5
150 Ω
3W
8
VCE PEAK
MTP8P10
MPF930
MUR105
MPF930
+10 V
7
IC PEAK
100 µF
MTP8P10
100 Ω
3W
6
Figure 19. Inductive Switching Measurements
+15 V
1 µF
10% IC
2
IB
-5
0
tc
10% VCLAMP
IB
3
1 µs
-3
VCLAMP
4
90% IB
-2
90% IC
tfi
IC
9
VCE
RB1
IB1
Iout
IB
A
50 Ω
MJE210
150 Ω
3W
500 µF
IB2
RB2
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
MTP12N10
1 µF
-Voff
COMMON
INDUCTIVE SWITCHING
L = 200 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
t, TIME (ms)
RθJC(t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
10
Figure 20. Typical Thermal Response (ZθJC(t)) for BUL147
http://onsemi.com
7
100
1000
BUL147
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: [email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: [email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: [email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
BUL147/D