ETC BUL146/D

ON Semiconductor
BUL146
BUL146F
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL146/BUL146F have an applications specific
state–of–the–art die designed for use in fluorescent electric lamp
ballasts to 130 Watts and in Switchmode Power supplies for all types
of electronic equipment. These high voltage/high speed transistors
offer the following:
POWER TRANSISTOR
6.0 AMPERES
700 VOLTS
40 and 100 WATTS
• Improved Efficiency Due to Low Base Drive Requirements:
•
•
•
•
High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125°C
Two Packages Choices: Standard TO220 or Isolated TO220
Parametric Distributions are Tight and Consistent Lot–to–Lot
BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File #
E69369
MAXIMUM RATINGS
Rating
Symbol
BUL146
BUL146F
Unit
Collector–Emitter Sustaining Voltage
VCEO
400
Vdc
Collector–Emitter Breakdown Voltage
VCES
700
Vdc
Emitter–Base Voltage
VEBO
9.0
Vdc
IC
Adc
Adc
Collector Current – Continuous
– Peak(1)
ICM
6.0
15
Base Current – Continuous
– Peak(1)
IB
IBM
4.0
8.0
RMS Isolation Voltage: (2)
(for 1 sec, R.H. 30%,
TC = 25 C)
VISOL1
VISOL2
VISOL3
–
–
–
4500
3500
1500
Volts
PD
100
0.8
40
0.32
Watts
W/°C
Total Device Dissipation
Derate above 25°C
(TC = 25°C)
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
BUL146
CASE 221A–09
TO–220AB
CASE 221D–02
ISOLATED TO–220 TYPE
BUL146F
THERMAL CHARACTERISTICS
Rating
Thermal Resistance – Junction to Case
– Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
 Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 5
Symbol
BUL146
BUL146F
Unit
RθJC
RθJA
1.25
62.5
3.125
62.5
°C/W
TL
260
1
°C
Publication Order Number:
BUL146/D
BUL146 BUL146F
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
400
–
–
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
ICEO
–
–
100
µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
(TC = 125°C)
ICES
–
–
–
–
–
–
100
500
100
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
–
–
100
µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
ELECTRICAL CHARACTERISTICS – (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)
Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)
VBE(sat)
–
–
0.82
0.93
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)
(TC = 125°C)
Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)
(TC = 125°C)
VCE(sat)
–
–
–
–
0.22
0.20
0.30
0.30
0.5
0.5
0.7
0.7
Vdc
hFE
14
–
12
12
8.0
7.0
10
–
30
20
20
13
12
20
34
–
–
–
–
–
–
–
Characteristic
ON CHARACTERISTICS
DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
–
14
–
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
COB
–
95
150
pF
Input Capacitance (VEB = 8.0 V)
CIB
–
1000
1500
pF
2.5
6.5
–
–
Dynamic
y a c Saturation
Sa u a o Volto
age:
Determined 1.0 µs and
3 0 µs respectively after
3.0
rising IB1 reaches 90% of
final IB1
(see Figure 18)
(IC = 1.3 Adc
IB1 = 300 mAdc
VCC = 300 V)
(IC = 3.0 Adc
IB1 = 0.6
0 6 Adc
VCC = 300 V)
1.0
µs
(TC = 125°C)
–
–
3.0
µs
(TC = 125°C)
–
–
0.6
2.5
–
–
3.0
7.0
–
–
0.75
1.4
–
–
VCE(dsat)
1.0
µs
(TC = 125°C)
–
–
3.0
µs
(TC = 125°C)
–
–
http://onsemi.com
2
V
BUL146 BUL146F
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
(IC = 1.3 Adc, IB1 = 0.13 Adc
IB2 = 0.65 Adc, VCC = 300 V)
ton
–
–
100
90
200
–
ns
toff
–
–
1.35
1.90
2.5
–
µs
ton
–
–
90
100
150
–
ns
toff
–
–
1.7
2.1
2.5
–
µs
tfi
–
–
115
120
200
–
ns
tsi
–
–
1.35
1.75
2.5
–
µs
tc
–
–
200
210
350
–
ns
tfi
–
–
85
100
150
–
ns
tsi
–
–
1.75
2.25
2.5
–
µs
tc
–
–
175
200
300
–
ns
tfi
80
–
–
210
180
–
ns
tsi
2.6
–
–
4.5
3.8
–
µs
tc
–
–
230
400
350
–
ns
(TC = 125°C)
Turn–Off Time
(TC = 125°C)
Turn–On Time
(IC = 3.0 Adc, IB1 = 0.6 Adc
IB1 = 1.5 Adc, VCC = 300 V)
(TC = 125°C)
Turn–Off Time
(TC = 125°C)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
(IC = 1.3 Adc, IB1 = 0.13 Adc
IB2 = 0.65 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 3.0 Adc, IB1 = 0.6 Adc
IB2 = 1.5 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 3.0 Adc, IB1 = 0.6 Adc
IB2 = 0.6 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
http://onsemi.com
3
BUL146 BUL146F
TYPICAL STATIC CHARACTERISTICS
100
100
TJ = 25°C
TJ = -20°C
10
1
0.01
1
0.1
VCE = 5 V
TJ = 125°C
VCE = 1 V
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = -20°C
10
1
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
10
IC = 1 A
1
2A
3A
5A
V CE , VOLTAGE (V)
V CE , VOLTAGE (V)
TJ = 25°C
6A
1
IC/IB = 10
0.1
TJ = 25°C
TJ = 125°C
IC/IB = 5
0
0.01
0.1
1
0.01
0.01
10
10
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
10000
1.1
TJ = 25°C
f = 1 MHz
Cib
1000
C, CAPACITANCE (pF)
1
V BE , VOLTAGE (V)
1
IC COLLECTOR CURRENT (AMPS)
1.2
0.9
0.8
TJ = 25°C
0.7
0.6
0.5
0.1
IB, BASE CURRENT (mA)
TJ = 125°C
0.4
0.01
IC/IB = 5
IC/IB = 10
0.1
1
100
Cob
10
1
10
1
10
100
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
http://onsemi.com
4
1000
BUL146 BUL146F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1000
600
2500
6
4
2
0
IC/IB = 10
2000
1500
500
4
6
TJ = 25°C
TJ = 125°C
4000
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 25°C
TJ = 125°C
3500
3000
2500
2000
1500
1000
IC = 1.3 A
500
IC/IB = 10
3
4
6
2
5
IC COLLECTOR CURRENT (AMPS)
7
0
8
4
3
5
hFE, FORCED GAIN
250
200
tfi
t, TIME (ns)
t, TIME (ns)
200
100
0
1
2
7
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
tc
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
6
Figure 10. Inductive Storage Time, tsi(hFE)
250
150
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC = 3 A
Figure 9. Inductive Storage Time, tsi
50
8
Figure 8. Resistive Switching, toff
1000
1
2
Figure 7. Resistive Switching, ton
1500
0
0
IC, COLLECTOR CURRENT (AMPS)
IC/IB = 5
500
0
8
IC, COLLECTOR CURRENT (AMPS)
2000
0
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
1000
TJ = 25°C
2500
t, TIME (ns)
t, TIME (ns)
TJ = 125°C
200
0
IC/IB = 5
3000
400
0
TJ = 25°C
TJ = 125°C
3500
t si , STORAGE TIME (ns)
t, TIME (ns)
800
4000
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
IC/IB = 5
IC/IB = 10
tc
tfi
150
100
TJ = 25°C
TJ = 125°C
3
4
5
6
7
50
8
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
6
7
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
http://onsemi.com
5
8
BUL146 BUL146F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
250
130
TC , CROSS-OVER TIME (ns)
Tfi , FALL TIME (ns)
IC = 3 A
110
100
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
90
80
70
60
IC = 1.3 A
IC = 1.3 A
120
TJ = 25°C
TJ = 125°C
3
4
6
5
7
200
150
50
8
9
10
11
12
13
14
IC = 3 A
100
15
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 25°C
TJ = 125°C
3
4
5
6
7
8
9
10
11
12
13
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Cross–Over Time
14
15
GUARANTEED SAFE OPERATING AREA INFORMATION
10
7
DC (BUL146)
5 ms
10 µs
1 ms
1 µs
EXTENDED
SOA
1
0.1
0.01
10
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
100
1000
1,0
POWER DERATING FACTOR
4
3
SECOND BREAKDOWN
DERATING
0,8
0,6
0,4
THERMAL DERATING
0,2
40
60
80
100
120
140
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
VBE(off)
2
-5 V
1
0V
0
-1, 5 V
600
400
200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
800
Figure 16. Reverse Bias Switching Safe Operating Area
Figure 15. Forward Bias Safe Operating Area
0,0
20
5
0
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
6
160
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC – VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter
junction reverse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an avalanche mode.
http://onsemi.com
6
BUL146 BUL146F
5
4
10
VCE
dyn 1 µs
3
8
VOLTS
2
tsi
7
dyn 3 µs
1
6
5
0
-1
-4
90% IB1
1
3 µs
0
1
2
3
4
TIME
5
6
7
8
0
Figure 18. Dynamic Saturation Voltage Measurements
1
2
3
4
TIME
5
150 Ω
3W
8
VCE PEAK
MTP8P10
MPF930
MUR105
MPF930
+10 V
7
IC PEAK
100 µF
MTP8P10
100 Ω
3W
6
Figure 19. Inductive Switching Measurements
+15 V
1 µF
10% IC
2
IB
-5
0
tc
10% VCLAMP
IB
3
1 µs
-3
VCLAMP
4
90% IB
-2
90% IC
tfi
IC
9
VCE
RB1
IB1
Iout
IB
A
50 Ω
MJE210
COMMON
150 Ω
3W
500 µF
IB2
RB2
MTP12N10
1 µF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
-Voff
INDUCTIVE SWITCHING
L = 200 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
10
t, TIME (ms)
Figure 20. Typical Thermal Response (ZθJC(t)) for BUL146
http://onsemi.com
7
100
1000
BUL146 BUL146F
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
0.10
P(pk)
0.1
0.05
t1
0.02
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.10
1.00
10.00
t, TIME (ms)
Figure 21. Typical Thermal Response for BUL146F
http://onsemi.com
8
RθJC(t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
100.00
1000
BUL146 BUL146F
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
MOUNTED
FULLY ISOLATED
PACKAGE
0.107″ MIN
LEADS
LEADS
HEATSINK
HEATSINK
0.107″ MIN
0.110″ MIN
Figure 22a. Screw or Clip Mounting
Position for Isolation Test Number 1
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a
screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain
a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the
package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
http://onsemi.com
9
BUL146 BUL146F
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
http://onsemi.com
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BUL146 BUL146F
PACKAGE DIMENSIONS
CASE 221D–02
(ISOLATED TO–220 TYPE)
UL RECOGNIZED: FILE #E69369
ISSUE D
–T–
–B–
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
–Y–
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
http://onsemi.com
11
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
BUL146 BUL146F
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: [email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: [email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: [email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
12
BUL146/D