Dual Bootstrapped, 12 V MOSFET Driver with Output Disable ADP3110 FEATURES GENERAL DESCRIPTION All-in-one synchronous buck driver Bootstrapped high-side drive One PWM signal generates both drives Anticross-conduction protection circuitry Output disable control turns off both MOSFETs to float output per Intel® VRM 10 specification The ADP3110 is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 30 ns transition time. One of the drivers can be bootstrapped and is designed to handle the high voltage slew rate associated with floating high-side gate drivers. The ADP3110 includes overlapping drive protection to prevent shoot-through current in the external MOSFETs. APPLICATIONS Multiphase desktop CPU supplies Single-supply synchronous buck converters The OD pin shuts off both the high-side and the low-side MOSFETs to prevent rapid output capacitor discharge during system shutdown. The ADP3110 is specified over the commercial temperature range of 0°C to 85°C and is available in an 8-lead SOIC_N package. SIMPLIFIED FUNCTIONAL BLOCK DIAGRAM 12V D1 VCC 4 BST ADP3110 1 CBST2 CBST1 IN 2 DRVH RG 8 Q1 DELAY RBST TO INDUCTOR SW 7 CMP VCC 6 CMP CONTROL LOGIC DRVL Q2 5 PGND DELAY 6 OD 3 05514-001 1V Figure 1. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2005 Analog Devices, Inc. All rights reserved. ADP3110 TABLE OF CONTENTS Specifications..................................................................................... 3 Overlap Protection Circuit...........................................................7 Absolute Maximum Ratings............................................................ 4 Application Information...................................................................8 ESD Caution.................................................................................. 4 Supply Capacitor Selection ..........................................................8 Pin Configuration and Function Descriptions............................. 5 Bootstrap Circuit...........................................................................8 Timing Characteristics..................................................................... 6 MOSFET Selection........................................................................8 Theory of Operation ........................................................................ 7 PC Board Layout Considerations................................................9 Low-Side Driver............................................................................ 7 Outline Dimensions ....................................................................... 11 High-Side Driver .......................................................................... 7 Ordering Guide .......................................................................... 11 REVISION HISTORY 6/05—Revision 0: Initial Version Rev. 0 | Page 2 of 12 ADP3110 SPECIFICATIONS VCC = 12 V, BST = 4 V to 26 V, TA = 25°C, unless otherwise noted. Table 1. 1 Parameter PWM INPUT Input Voltage High 2 Input Voltage Low2 Input Current2 Hysteresis2 OD INPUT Input Voltage High2 Input Voltage Low2 Input Current 2 Hysteresis2 Propagation Delay Times 3 HIGH-SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Output Resistance, Unbiased Transition Times Propagation Delay Times3 SW Pull Down Resistance LOW-SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Output Resistance, Unbiased Transition Times Propagation Delay Times3 Symbol Min Typ Max Unit 0.8 +1 V V μA mV 2.0 −1 90 250 2.0 tpdlOD See Figure 3 250 20 35 V V μA mV ns tpdhOD See Figure 3 40 55 ns BST to SW = 12 V BST to SW = 12 V BST to SW = 0 V BST to SW = 12 V, CLOAD = 3 nF, see Figure 4 BST to SW = 12 V, CLOAD = 3 nF, see Figure 4 BST to SW = 12 V, CLOAD = 3 nF,see Figure 4 BST to SW = 12 V, CLOAD = 3 nF, see Figure 4 SW to PGND 3.8 1.4 10 40 30 45 25 10 4.4 1.8 Ω Ω kΩ ns ns ns ns kΩ VCC = PGND CLOAD = 3 nF, see Figure 4 CLOAD = 3 nF, see Figure 4 CLOAD = 3 nF, see Figure 4 CLOAD = 3 nF, see Figure 4 SW = 5 V SW = PGND 3.4 1.4 10 40 20 15 30 190 150 −1 90 RDRV + SW trDRVH tfDRVH tpdhDRVH tpdlDRVH RSW − PGND RDRVL − PGND trDRVL tfDRVL tpdhDRVL tpdlDRVL Time-out Delay SUPPLY Supply Voltage Range2 Supply Current2 UVLO Voltage2 Hysteresis2 Conditions VCC ISYS 110 95 0.8 +1 4.15 BST = 12 V, IN = 0 V VCC rising 2 1.5 350 1 All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods. 2 Specifications apply over the full operating temperature range TA = 0°C to 85°C. 3 For propagation delays, tpdh refers to the specified signal going high, and tpdl refers to it going low. Rev. 0 | Page 3 of 12 55 45 65 35 4.0 1.8 50 30 35 40 13.2 5 3.0 Ω Ω kΩ ns ns ns ns ns ns V mA V mV ADP3110 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter VCC BST BST to SW SW DC <200 ns DRVH DC <200 ns DRVL DC <200 ns IN, OD θJA, SOIC_N 2-Layer Board 4-Layer Board Operating Ambient Temperature Range Junction Temperature Range Storage Temperature Range Lead Temperature Range Soldering (10 sec) Vapor Phase (60 sec) Infrared (15 sec) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Unless otherwise specified all other voltages are referenced to PGND. Rating –0.3 V to +15 V –0.3 V to VCC + 15 V –0.3 V to +15 V –5 V to +15 V –10 V to +25 V SW – 0.3 V to BST + 0.3 V SW – 2 V to BST + 0.3 V –0.3 V to VCC + 0.3 V –2 V to VCC + 0.3 V –0.3 V to 6.5 V 123°C/W 90°C/W 0°C to 85°C 0°C to 150°C –65°C to +150°C 300°C 215°C 260°C ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. 0 | Page 4 of 12 ADP3110 BST 1 IN 2 ADP3110 8 DRVH 7 SW OD 3 6 PGND TOP VIEW VCC 4 (Not to Scale) 5 DRVL 05514-002 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS Figure 2. 8-Lead SOIC_N Pin Configuration Table 3. Pin Function Descriptions Pin No. 1 Mnemonic BST 2 IN 3 4 5 6 7 OD VCC DRVL PGND SW 8 DRVH Description Upper MOSFET Floating Bootstrap Supply. A capacitor connected between the BST and SW pins holds this bootstrapped voltage for the high-side MOSFET as it is switched. Logic Level PWM Input. This pin has primary control of the driver outputs. In normal operation, pulling this pin low turns on the low-side driver; pulling it high turns on the high-side driver. Output Disable. When low, this pin disables normal operation, forcing DRVH and DRVL low. Input Supply. This pin should be bypassed to PGND with ~1 μF ceramic capacitor. Synchronous Rectifier Drive. Output drive for the lower (synchronous rectifier) MOSFET. Power Ground. This pin should be closely connected to the source of the lower MOSFET. Switch Node Connection. This pin is connected to the buck-switching node, close to the upper MOSFET’s source. It is the floating return for the upper MOSFET drive signal. It is also used to monitor the switched voltage to prevent turn-on of the lower MOSFET until the voltage is below ~1 V. Buck Drive. Output drive for the upper (buck) MOSFET. Rev. 0 | Page 5 of 12 ADP3110 TIMING CHARACTERISTICS OD tpdlOD tpdhOD 05514-003 90% DRVH OR DRVL 10% Figure 3. Output Disable Timing Diagram IN tpdlDRVL tfDRVL tpdlDRVH trDRVL DRVL tfDRVH tpdhDRVH DRVH-SW trDRVH VTH VTH 1V Figure 4. Timing Diagram (Timing is Referenced to the 90% and 10% Points Unless Otherwise Noted) Rev. 0 | Page 6 of 12 05514-004 tpdhDRVL SW ADP3110 THEORY OF OPERATION The ADP3110 is a dual MOSFET driver optimized for driving two N-channel MOSFETs in a synchronous buck converter topology. A single PWM input signal is all that is required to properly drive the high-side and the low-side MOSFETs. Each driver is capable of driving a 3 nF load at speeds up to 500 kHz. A more detailed description of the ADP3110 and its features follows. Refer to Figure 1. on. To complete the cycle, Q1 is switched off by pulling the gate down to the voltage at the SW pin. When the low-side MOSFET, Q2, turns on, the SW pin is pulled to ground. This allows the bootstrap capacitor to charge up to VCC again. The high-side driver’s output is in phase with the PWM input. When the driver is disabled, the high-side gate is held low. OVERLAP PROTECTION CIRCUIT LOW-SIDE DRIVER The overlap protection circuit prevents both of the main power switches, Q1 and Q2, from being on at the same time. This prevents shoot-through currents from flowing through both power switches, and the associated losses that can occur during their on/off transitions. The overlap protection circuit accomplishes this by adaptively controlling the delay from the Q1 turn off to the Q2 turn on, and by internally setting the delay from the Q2 turn off to the Q1 turn on. The low-side driver is designed to drive a ground-referenced N-channel MOSFET. The bias to the low-side driver is internally connected to the VCC supply and PGND. When the ADP3110 is enabled, the driver’s output is 180 degrees out of phase with the PWM input. When the ADP3110 is disabled, the low-side gate is held low. HIGH-SIDE DRIVER The high-side driver is designed to drive a floating N-channel MOSFET. The bias voltage for the high-side driver is developed by an external bootstrap supply circuit, which is connected between the BST and SW pins. The bootstrap circuit comprises a diode, D1, and bootstrap capacitor, CBST1. CBST2 and RBST are included to reduce the highside gate drive voltage and limit the switch node slew rate (referred to as a Boot-Snap™ circuit, see the Application Information section for more details). When the ADP3110 is starting up the SW pin is at ground; therefore the bootstrap capacitor charges up to VCC through D1. When the PWM input goes high, the high-side driver begins to turn on the highside MOSFET, Q1, by pulling charge out of CBST1 and CBST2. As Q1 turns on, the SW pin rises up to VIN, forcing the BST pin to VIN + VC(BST), which is enough gate-to-source voltage to hold Q1 To prevent the overlap of the gate drives during the Q1 turn off and the Q2 turn on, the overlap circuit monitors the voltage at the SW pin. When the PWM input signal goes low, Q1 begins to turn off (after propagation delay). Before Q2 can turn on, the overlap protection circuit makes sure that SW has first gone high and then waits for the voltage at the SW pin to fall from VIN to 1 V. Once the voltage on the SW pin has fallen to 1 V, Q2 begins turn on. If the SW pin had not gone high first, then the Q2 turn on is delayed by a fixed 150 ns. By waiting for the voltage on the SW pin to reach 1 V or for the fixed delay time, the overlap protection circuit ensures that Q1 is off before Q2 turns on, regardless of variations in temperature, supply voltage, input pulse width, gate charge, and drive current. If SW does not go below 1 V after 190 ns, DRVL turns on. This can occur if the current flowing in the output inductor is negative and is flowing through the high-side MOSFET body diode. Rev. 0 | Page 7 of 12 ADP3110 APPLICATION INFORMATION SUPPLY CAPACITOR SELECTION For the supply input (VCC) of the ADP3110, a local bypass capacitor is recommended to reduce the noise and to supply some of the peak currents drawn. Use a 4.7 μF, low ESR capacitor. Multilayer ceramic chip (MLCC) capacitors provide the best combination of low ESR and small size. Keep the ceramic capacitor as close as possible to the ADP3110. BOOTSTRAP CIRCUIT The bootstrap circuit uses a charge storage capacitor (CBST1) and a diode, as shown in Figure 1. These components can be selected after the high-side MOSFET is chosen. The bootstrap capacitor must have a voltage rating that is able to handle twice the maximum supply voltage. A minimum 50 V rating is recommended. The capacitor values are determined using the following equations: C BST 1 + C BST 2 = 10 × C BST 1 C BST 1 + C BST 2 = Q GATE VGATE VGATE VCC − V D (1) (2) A small signal diode can be used for the bootstrap diode due to the ample gate drive voltage supplied by VCC. The bootstrap diode must have a minimum 15 V rating to withstand the maximum supply voltage. The average forward current can be estimated by I F ( AVG) = Q GATE × f MAX (5) where fMAX is the maximum switching frequency of the controller. The peak surge current rating should be calculated by I F ( PEAK ) = VCC − VD R BST (6) MOSFET SELECTION When interfacing the ADP3110 to external MOSFETs, the designer should be aware of a few considerations. These help to make a more robust design that minimizes stresses on both the driver and MOSFETs. These stresses include exceeding the short-time duration voltage ratings on the driver pins as well as the external MOSFET. where: QGATE is the total gate charge of the high-side MOSFET at VGATE. VGATE is the desired gate drive voltage (usually in the range of 5 V to 10 V, 7 V being typical). VD is the voltage drop across D1. Rearranging Equation 1 and Equation 2 to solve for CBST1 yields C BST 1 = 10 × Q GATE VCC − V D (3) CBST2 can then be found by rearranging Equation 1 C BST 2 = 10 × Q GATE VGATE − C BST 1 (4) For example, an NTD60N02 has a total gate charge of about 12 nC at VGATE = 7 V. Using VCC = 12 V and VD = 1 V, we find CBST1 = 12 nF and CBST2 = 6.8 nF. Good quality ceramic capacitors should be used. RBST is used for slew rate limiting to minimize the ringing at the switch node. It also provides peak current limiting through D1. An RBST value of 1.5 Ω to 2.2 Ω is a good choice. The resistor needs to be able to handle at least 250 mW due to the peak currents that flow through it. It is also highly recommended to use the Boot-Snap circuit to improve the interaction of the driver with the characteristics of the MOSFETs. If a simple bootstrap arrangement is used, make sure to include a proper snubber network on the SW node. High-Side (Control) MOSFETs The high-side MOSFET is usually selected to be high speed to minimize switching losses (see any ADI Flex-Mode™ controller data sheet for more details on MOSFET losses). This usually implies a low gate resistance and low input capacitance/charge device. Yet, there is also a significant source lead inductance that can exist (this depends mainly on the MOSFET package; it is best to contact the MOSFET vendor for this information). The ADP3110 DRVH output impedance and the external MOSFETs’ input resistance determine the rate of charge delivery to the MOSFETs’ gate capacitance which, in turn, determines the switching times of the MOSFETs. A large voltage spike can be generated across the source lead inductance when the high-side MOSFETs switch off, due to large currents flowing in the MOSFETs during switching (usually larger at turn off due to ramping of the current in the output inductor). This voltage spike occurs across the internal die of the MOSFETs and can lead to catastrophic avalanche. The mechanisms involved in this avalanche condition can be referenced in literature from the MOSFET suppliers. Rev. 0 | Page 8 of 12 ADP3110 The MOSFET vendor should provide a maximum voltage slew rate at drain current rating such that this can be designed around. The next step is to determine the expected maximum current in the MOSFET. This can be done by (7) Contact Sales for an updated list of recommended low-side MOSFETs. PC BOARD LAYOUT CONSIDERATIONS DMAX is determined for the VR controller being used with the driver. Note this current gets divided roughly equally between MOSFETs if more than one is used (assume a worst-case mismatch of 30% for design margin). LOUT is the output inductor value. When producing the design, there is no exact method for calculating the dV/dt due to the parasitic effects in the external MOSFETs as well as the PCB. However, it can be measured to determine if it is safe. If it appears the dV/dt is too fast, an optional gate resistor can be added between DRVH and the high-side MOSFET. This resistor slows down the dV/dt, but it also increases the switching losses in the high-side MOSFET. The ADP3110 is optimally designed with an internal drive impedance that works with most MOSFETs to switch them efficiently yet minimize dV/dt. However, some high speed MOSFETs may require this external gate resistor, depending on the currents being switched in the MOSFET. Low-Side (Synchronous) MOSFETs The low-side MOSFETs are usually selected to have a low on resistance to minimize conduction losses. This usually implies a large input gate capacitance and gate charge. The first concern is to make sure the power delivery from the ADP3110’s DRVL does not exceed the thermal rating of the driver. Use the following general guidelines when designing printed circuit boards. 1. 2. 3. 4. 5. Trace out the high current paths and use short, wide (>20 mil) traces to make these connections. Minimize trace inductance between the DRVH and DRVL outputs and the MOSFET gates. Connect the PGND pin of the ADP3110 as closely as possible to the source of the lower MOSFET. The VCC bypass capacitor should be located as closely as possible to the VCC and PGND pins. Use vias to other layers when possible to maximize thermal conduction away from the IC. The circuit in Figure 6 shows how four drivers can be combined with the ADP3181 to form a total power conversion solution for generating VCC(CORE) for an Intel CPU that is VRD 10.x compliant. Figure 5 shows an example of the typical land patterns based on the guidelines given previously. For more detailed layout guidelines for a complete CPU voltage regulator subsystem, refer to the Layout and Component Placement section in the ADP3181 data sheet. The next concern for the low-side MOSFETs is to prevent them from inadvertently being switched on when the high-side MOSFET turns on. This occurs due to the drain-gate (Miller, also specified as Crss) capacitance of the MOSFET. When the drain of the low-side MOSFET is switched to VCC by the highside turning on (at a rate dV/dt), the internal gate of the lowside MOSFET is pulled up by an amount roughly equal to VCC × (Crss/Ciss). It is important to make sure this does not put the MOSFET into conduction. Another consideration is the nonoverlap circuitry of the ADP3110, which attempts to minimize the nonoverlap period. During the state of the high-side turning off to low-side turning on, the SW pin and the conditions of SW prior to switching are monitored to adequately prevent overlap. However, during the low-side turn off to high-side turn on, the SW pin does not contain information for determining the proper switching time, so the state of the DRVL pin is monitored to go below one sixth of VCC and then a delay is added. Due to the Miller capacitance and internal delays of the low-side MOSFET gate, one must ensure the Miller-to-input capacitance Rev. 0 | Page 9 of 12 CBST1 CBST2 RBST D1 CVCC 05514-005 I MAX D MAX = I DC ( per phase ) + (VCC − VOUT )× f MAX × L OUT ratio is low enough and the low-side MOSFET internal delays are not large enough to allow accidental turn on of the low-side MOSFET when the high-side MOSFET turns on. Figure 5. External Component Placement Example Rev. 0 | Page 10 of 12 Figure 6. VRD 10.x Compliant Power Supply Circuit 05514-006 ENABLE POWER GOOD C211 1nF FROM CPU VIN RTN VIN 12V C4 1μF D1 1N4148 + C2 1FOR RLDY 470kΩ RT 137kΩ, 1% CFB 22pF R1 10Ω PWRGD 10 14 C23 1nF RAMPADJ ILIMIT 15 CSREF 16 GND 19 COMP 9 CSSUM 17 SW4 20 FB 8 RT SW3 21 FBRTN 7 DELAY SW2 22 CPUID 6 13 SW1 23 VID0 5 12 PWM4 24 VID1 4 CSCOMP 18 PWM3 25 VID2 3 EN PWM2 26 VID3 11 VCC 28 PWM1 27 VID4 2 U1 ADP3181 1 R2 357kΩ, 1% RLIM 150kΩ, 1% C22 1nF CCS1 560pF CCS2 1.5nF RSW41 RSW21 RCS2 RCS1 35.7kΩ 84.5kΩ RPH4 158kΩ, 1% RSW31 RSW11 RPH2 RPH3 158kΩ, RPH1 1% 158kΩ, 158kΩ, 1% 1% A DESCRIPTION OF OPTIONAL COMPONENTS, SEE THE ADP3181 THEORY OF OPERATION SECTION. CLDY 39nF CA RB RA 1.21kΩ 470pF 12.1kΩ 470pF CB + + C1 2700μF/16V/3.3A × 2 SANYO MV-WX SERIES C3 100μF L1 370nH 18A C17 4.7μF D5 1N4148 C13 4.7μF D4 1N4148 C9 4.7μF D3 1N4148 C5 4.7μF D2 1N4148 DRVL 5 VCC 4 C16 6.8nF PGND 6 DRVL 5 IN OD VCC 3 4 SW 7 BST 2 DRVH 8 U5 ADP3110 C20 12nF DRVL 5 VCC R6 2.2Ω PGND 6 SW 7 DRVH 8 OD IN BST C14 6.8nF 1 4 3 2 1 U4 ADP3110 C16 12nF DRVL 5 VCC 4 R5 2.2Ω PGND 6 SW 7 DRVH 8 OD IN 2 3 BST 1 C10 6.8nF C12 12nF U3 ADP3110 R4 2.2Ω PGND 6 OD 3 SW 7 IN 2 DRVH 8 BST 1 C6 6.8nF C8 12nF U2 ADP3110 R3 2.2Ω Q15 NTD110N02 Q11 NTD110N02 Q7 NTD110N02 Q3 NTD110N02 Q16 NTD110N02 Q13 NTD60N02 C19 4.7μF Q12 NTD110N02 Q9 NTD60N02 C15 4.7μF Q8 NTD110N02 Q5 NTD60N02 C11 4.7μF Q4 NTD110N02 Q1 NTD60N02 C7 4.7μF L5 320nH/1.4mΩ L4 320nH/1.4mΩ L3 320nH/1.4mΩ RTH1 100kΩ, 5% NTC C24 + + 10μF × 18 MLCC IN SOCKET C31 560μF/4V × 8 L2 320nH/1.4mΩ SANYO SEPC SERIES 5mΩ EACH VCC (CORE) RTN VCC (CORE) 0.8375V – 1.6V 95A TDC, 119A PK ADP3110 ADP3110 OUTLINE DIMENSIONS 5.00 (0.1968) 4.80 (0.1890) 8 5 4.00 (0.1574) 3.80 (0.1497) 1 4 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) 6.20 (0.2440) 5.80 (0.2284) 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) COPLANARITY SEATING 0.31 (0.0122) 0.10 PLANE 0.50 (0.0196) × 45° 0.25 (0.0099) 8° 0.25 (0.0098) 0° 1.27 (0.0500) 0.40 (0.0157) 0.17 (0.0067) COMPLIANT TO JEDEC STANDARDS MS-012-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN Figure 7. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model ADP3110KRZ 1 ADP3110KRZ-RL1 1 Temperature Range 0°C to 85°C 0°C to 85°C Package Description Standard Small Outline Package [SOIC_N] Standard Small Outline Package [SOIC_N] Z = Pb-free part. Rev. 0 | Page 11 of 12 Package Option R-8 R-8 Quantity per Reel N/A 2500 ADP3110 NOTES ©2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D05514–0–6/05(0) Rev. 0 | Page 12 of 12