ETC DSM8100-000

DATA SHEET
DSM8100-000: Mesa Beam Lead PIN Diode
Applications:
●
Designed for switching applications
Features
Low capacitance
Low resistance
● Fast switching
● Oxide–nitride passivated
● Durable construction
● High voltage
●
●
Description
Skyworks’ Silicon Mesa Beam Lead PIN diode is surrounded by a
glass frame for superior strength and electrical performance that
surpasses the standard beam lead PINs. The DSM8100-000 is
designed for low resistance, low capacitance and fast switching
time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing
of the junction permitting use in assemblies with some degree of
moisture sealing. A layer of glass provides increased mechanical
strength.
Absolute Maximum Ratings
Characteristic
Value
Operating temperature
-65 °C to +150 °C
Storage temperature
-65 °C to +200 °C
Power dissipation (derate
linearly to zero @ 175 °C)
250 mW
Typical lead strength
8 grams pull
The DSM8100 is ideal for microstrip or stripline circuits and for
circuits requiring high isolation from a series mounted diode such
as broad band multi-throw switches, phase shifters, limiters,
attenuators and modulators.
Mesa Beam Lead Diode Specifications
Part Number
Voltage Breakdown
@ IR 10 µA
(V) Max.
Capacitance Total
10 V, 1 MHz
(pF) Max.
Series Resistance (Ω)
10 mA,100 MHz
Max.
CLT
IF = 10 mA, IR = 6 mA
(ns) Typ.
Outline
Drawing
Number
DSM8100-000
60
0.025
3.5
25
389-003
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice. • Oct. 17, 2003
1
DATA SHEET • DSM8100-000
Typical Performance Data
Isolation (dB)
Attenuation (dB)
Conventional
Beam Lead
10
Chip
0.75
0.60
0.45
0.30
0.15
(10 mA)
15
VR = 40 V
20
0
0.3
1
3
10
30
100
0
300
5
10
15
18 20
25
30
Time (ns)
Frequency (GHz)
Switching Time Data
Typical Isolation and Insertion Loss Characteristics
100
RF Resistance (Ω)
Capacitance (pF)
20
15
0.06
0.05
0.04
0.03
0.02
0.01
1 MHz
10
1
Above 1 GHz
0.1
0
10
20
30
0.1
1
10
100
Reverse Voltage (V)
Forward Bias Current (mA)
Typical Capacitance vs. Reverse Voltage
Typical RF Resistance vs. Forward Bias Current
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
2
Insertion Loss (dB)
Mesa Beam
Lead
5
45
40
35
30
25
20
15
10
5
0
Oct. 17, 2003 • Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice.
DATA SHEET • DSM8100-000
Typical Beam Lead Mounting
Typical SPDT Circuit Arrangement
Beam Lead Pin
Duroid Substrate
50 Ω
Transmission LIne
50 Ω
Glass Bead
Connecting
Lead
Beam Lead Pin
0.005"
Preferred Beam
Lead Orientation
Metal Conductor
Duroid
389-003
0.009 (0.23 mm) Min.
0.0115 (0.29 mm) Max.
0.009 (0.23 mm) Min.
0.0115 (0.29 mm) Max.
0.014
(0.36 mm)
Max.
0.011
(0.28 mm)
Max.
0.0035 (0.09 mm) Min.
0.0070 (0.18 mm) Max.
0.032 (0.81 mm) Min.
0.035 (0.89 mm) Max.
0.005
(0.13 mm)
Max.
0.0002 (0.005 mm) Min.
0.0007 (0.018 mm) Max.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice. • Oct. 17, 2003
3
DATA SHEET • DSM8100-000
Beam-Lead Diodes
Handling
Due to their small size, beam-lead devices are fragile and should
be handled with extreme care. The individual plastic packages
should be handled and opened carefully, so that no undue
mechanical strain is applied to the packaged device. It is recommended that the beam-lead devices be handled through use of a
vacuum pencil using an appropriate size vacuum needle or a
pointed wooden stick such as a sharpened Q-tip or match stick.
The device will adhere to the point and can easily be removed
from the container and positioned accurately for bonding without
damage. Such handling should be done under a binocular microscope with magnification in the range of 20X to 30X.
Special handling precautions are also required to avoid electrical
damage, such as static discharge.
Bonding
The DSM8100-000 can best be bonded to substrates by means
of thermocompression bonding. Essentially this type of bonding
involves pressing the gold beam of the device against the gold
plated metalized substrate under proper conditions of heat and
pressure so that a metalurgical bond joint between the two
occurs.
Procedure
The beam-lead devices to be bonded should be placed on a
clean, hard surface such as a microscope slide. It is recommended that the beam side of the device be down so that this
side will be toward the substrate when bonded. The device can
be picked up by pressing lightly against one beam with the
heated tip. The substrate can then be appropriately positioned
under the tip and the device brought down against the substrate,
with proper pressure applied by means of the weld head.
A bonding tip temperature in the 350 °C to 450 °C range is recommended along with a bonding force of 50 to 70 grams. The
bonding time is in the range of 2 to 3 seconds. Optimum bonding
conditions should be determined by trial and error to compensate
for slight variations in the condition of the substrate, bonding tip,
and the type of device being bonded.
Equipment
The heat and pressure are obtained through use of a silicon carbide bonding tip with a radius of two to three mils. Such an item
is available from several commercial sources. In order to supply
the required tip-travel and apply proper pressure, a standard
miniature weld head can be used. Also available is a heated
wedge shank which is held by the weld head and in turn holds
the tip and supplies heat to it. The wedge shank is heated by
means of a simple AC power supply or a pulse type heated tool.
Substrate
For optimum bonding a gold plated surface at least 100
microinches thick is necessary. Although it is possible to bond to
relatively soft metalized substrate material such as epoxy-fiberglass, etc., optimum bonding occurs when a hard material such
as ceramic can be used.
Quality
If a good bond has been obtained, it is impossible to separate the
beam-lead device from the metalized substrate without damage.
If the device is destructively removed, the beam will tear away,
leaving the bonded portion attached to the substrate.
Beam–Lead Packaging
The DSM8100-000 is shipped in 2" x 2" black gel packs. The
beam-leads are mounted on the gel, the devices are covered
with a piece of lint-free release paper, on top of which is placed a
piece of conductive foam.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
4
Oct. 17, 2003 • Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice.