PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency 16dBm CDMA Power with 9% Efficiency Power-Down Capability Temperature Compensation Circuit for Icq Applications 3.5V CDMA/AMPS Cellular Handsets Description The ECM011 is a power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Heterojunction Bipolar Transistor (HBT) process. It is optimized for cellular CDMA (digital) in the 824MHz to 849MHz band. It operates from a positive voltage (3.2 - 4.2V Vcc) and includes a power-down feature. The input and output are both matched to 50Ω. It is housed in a 6 X 6 mm Land Grid Array package. A proprietary temperature compensated bias circuit provides nearly a constant Icq from -40°C to +85°C in the low power mode. A Q control pin switches the quiescent current to 50mA for low output power range. Electrical Specifications o Test Conditions: Ta = 25 C, VCC = +3.5 V, VREF / PD (reference / power-down voltage) = +2.9 V, F = 824 to 849MHz SYMBOL PARAMETER MIN. LIMITS TYP. Frequency 824 Gain (CDMA Modulation) 26 29 Output Power (CDMA) 28 Adjacent Channel Power Rejection -48 Alternate Channel Power Rejection -60 Power Added Efficiency (CDMA) @ 28.0dBm 30 35 Power Added Efficiency (CDMA) @ 16.0dBm 9 Output Power (AMPS) 31.5 Power Added Efficiency (AMPS) 48 Output Load Stability 6:1 All Phase Angles Tolerance for output VSWR Mismatch 10:1 Quiescent Current (No RF) IC Q 50 Quiescent Current (No RF) IC Q 100 Leakage Current Vcc = 3.5V, Vref = 0V 3 Vref/pd Supply Current Ipd 1 Supply Voltage V ref /pd 2.9 Supply Voltage V cc 3.2 3.5 Vq Voltage (High Power Mode) Vq 0.0 Vq Voltage (Low Power Mode) Vq 2.0 2.8 Input Return Loss IRL 10 Noise Figure NF 4.5 Noise Power -135 Harmonics, 2f, 3f, 4f Power Down On/Off Time TON/OFF <100 Switching time between output power levels 6 Thi/Low NOTE 1: Using Application Schematic. Tuned for CDMA. NOTE 2: @ 885KHz offset from band center, Pout ≤ 28dBm, High/Low mode NOTE 3: @ 1980KHz offset from band center, Pout ≤ 28dBm, High/Low mode F G P ACPR Alt CPR PAE PAE1 P SAT PAE MAX. 849 -46 -56 -60 65 140 10 4.2 0.8 6.0 -40 UNIT MHz dB dBm dBc dBc % % dBm % dBc mA mA uA mA V V V V dB dB dBm/Hz dBc ns usec TEST CONDITION NOTE 1 NOTE 2 NOTE 3 High Power Mode Low Power Mode No Damage Low Power Mode High Power Mode SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 1 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE PACKAGE DIMENSIONS AND MARKINGS The ECM011 is a laminate base, overmold encapsulated modular package designed for surface-mounted solder attachment to a printed circuit board. Package Dimensions TOP VIEW X X3 SYMBOL X3 X2 X2 X1 BOTTOM SIDE GROUND PAD X1 (The exposed ground metal is within this area) 1 Y2 7 CL Y1 8 ENGLISH inch .004 METRIC mm 0.1 X .232 X1 .055 1.40 X2 .095 2.41 X3 Y .116 .232 2.95 5.89 Y1 .095 2.41 Y2 .116 2.95 Y3 Y4 .055 .150 1.40 3.81 5.89 Y4 2 Y CL 6 Y3 Y2 Y1 3 4 5 PINOUT PIN 1 Vcc1 PIN 2 RFin PIN 3 Vpd PIN 4 Vq PIN 5 Vcc2 PIN 6 RFout PIN 7 Gnd PIN 8 Gnd BOTTOM SIDE PAD .036" x .030" (.91mm x .76mm) Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) PIN 1 INDICATOR EiC xxxx ECM011 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 2 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE PCB LAYOUT 1. The front side of the pcb ground area under the PAM requires the use of multiple vias to provide low thermal resistance to the backside of the pcb ground. EVAL BOARD J3 J2 RFout C7 C6 RFin C4 C5 60-000481-000(1) C1 C9 C8 C3 J1 + Vpd Vq G Vcc C2 SEE DETAIL A DETAIL A QTY 4 4 1 2 1 1 1 DESIGNATOR C1, C4, C6, C8 C3, C5, C7, C9 C2 J2, J3 U1 --J1 VALUE 100pF 1.0uF 10 uF ECM011 ------- DESCRIPTION CAPACITOR, 0603 CAPACITOR, 0603 CAPACITOR, 6032 SMA CONNECTOR IC 26 GA, WIRE .5” CONNECTOR, RT. ANG PCB MANUFACTURER &P/N ROHM MCH185A101JK ROHM MCH182F105ZK PANASONIC ECS-HICC106R CDI 5260CC EiC Corp ANY SULLINS PZC04SGAN EiC Corp 60-000481-000(1) NOTE 1 NOTE 1 NOTE 1 NOTE 1 1. EiC RECOMMENDED COMPONENTS ARE SHOW. EQUIVALENT COMPONENTS MAY BE USED. NOTES: UNLESS OTHERWISE SPECIFIED SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 3 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE SCHEMATIC SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 4 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Figure 1 AMPS Mode - Po vs. Gain 35 32 824MHz, -40C 836MHz, -40C 29 Gain (dB) 849MHz, -40C 824MHz, 25C 836MHz, 25C 849MHz, 25C 26 824MHz, 85C 836MHz, 85C 849GHz, 85C 23 20 0 5 10 15 20 25 30 35 Po (dBm) Figure 2 AMPS Mode Po vs. Icc 1000 900 800 824MHz, -40C 700 836MHz, -40C Icc (mA) 600 849MHz, -40C 824MHz, 25C 500 836MHz, 25C 849MHz, 25C 400 824MHz, 85C 300 836MHz, 85C 849GHz, 85C 200 100 0 0 5 10 15 20 25 30 35 Po (dBm) SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 5 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Figure 3 CDMA Mode - Po vs. Gain 32 Gain (dB) 31 30 824MHz, -40C 29 836MHz, -40C 849MHz, -40C 28 824MHz, 25C 836MHz, 25C 27 849MHz, 25C 824MHz, 85C 26 836MHz, 85C 849GHz, 85C 25 24 824MHz, -40C, Lo 836MHz, -40C, Lo 23 849MHz, -40C, Lo 824MHz, 25C, Lo 22 836MHz, 25C, Lo 849MHz, 25C, Lo 21 824MHz, 85C, Lo 836MHz, 85C, Lo 20 849MHz, 85C, Lo 0 5 10 15 20 25 30 Po (dBm) Figure 4 CDMA Mode - Po vs. Icc 800 824MHz, -40C 700 836MHz, -40C 849MHz, -40C 600 824MHz, 25C 836MHz, 25C 849MHz, 25C Icc (mA) 500 824MHz, 85C 836MHz, 85C 400 849MHz, 85C 824MHz, -40C, Lo 300 836MHz, -40C, Lo 849MHz, -40C, Lo 200 824MHz, 25C, Lo 836MHz, 25C, Lo 100 849MHz, 25C, Lo 824MHz, 85C, Lo 0 836MHz, 85C, Lo 0 5 10 15 20 25 30 849MHz, 85C, Lo Po (dBm) SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 6 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Figure 5 CDMA Mode - Po vs. ACPR1 0 -10 -20 824MHz, -40C 836MHz, -40C ACPR1 (dBc) -30 849MHz, -40C 824MHz, 25C -40 836MHz, 25C 849MHz, 25C -50 824MHz, 85C -60 836MHz, 85C 849GHz, 85C -70 -80 0 5 10 15 20 25 30 Po (dBm) Figure 6 CDMA Mode - Po vs. ACPR2 0 824MHz, -40C -10 836MHz, -40C 849MHz, -40C -20 824MHz, 25C 836MHz, 25C ACPR2 (dBc) -30 849MHz, 25C 824MHz, 85C -40 836MHz, 85C 849GHz, 85C -50 824MHz, -40C, Lo 836MHz, -40C, Lo 849MHz, -40C, Lo -60 824MHz, 25C, Lo 836MHz, 25C, Lo -70 849MHz, 25C, Lo 824MHz, 85C, Lo -80 0 5 10 15 20 25 30 849MHz, 85C, Lo Po (dBm) SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 836MHz, 85C, Lo Fax: (510) 979-8902 www.eiccorp.com 7 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE ECM011 Operating Principles and Key Features ECM011 is a 6x6mm size Power Amplifier Module (PAM) for cellular band CDMA (digital) and AMPS (analog) handset market.. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs proprietary InGaP HBT provides excellent reliability and is used in the infrastructure industry. The InGaP HBT is inherently superior to AlGaAs HBT. The surface defect density in InGaP is much lower than that of AlGaAs. The HBT life test of EiC InGaP HBT has gone through 315oC junction temperature and 50kA/cm2 for over 6000 hours (8 ½ months), translating to multi-million hours lifetime or longer in the operation envelope [1]. This kind of robust performance is far superior to conventional AlGaAs HBT. The InGaP HBT PAM goes through a product burn-in test as well. A large sample group, usually 100 pieces, goes through burn-in test at an ambient temperature of 125 to 145 oC for 1000 hours. The FIT number is than calculated based upon the data collected. The MTTF is simply 1/FIT, this MTTF should agree with the HBT life test results. The agreement between the MTTF of HBT from life test and the FIT is essential: it validates both tests! If there is a large discrepancy [2], the quality claim may be flawed. Although handset applications do not have as stringent operating requirements as the infrastructure market, the high reliability of InGaP HBT offers an assurance to the user of a high quality product designed for high volume production. II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature Variation Current gain of InGaP HBT varies about 10% over –40 to +85oC range, compared with 50% of AlGaAs HBT. This low gain variation over temperature, coupled with the patent-pending circuit design approach, provides for more stable electrical performance. III. ECM011 Offers High Gain and Margin for Transmitter Chain Design The typical gain of the ECM011 is 29dB. This high gain allows the driver amplifier to run very linear which results in reduced current. Taking into account the 3dB loss of the BPF in front of the PAM, the driver needs to deliver only 4dBm linear power. The P1dB of the driver amplifier should be more than 10dBm. SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 8 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE If a lower gain PAM is used, the driver needs to provide more power, at the expense of more operation current and possible degradation in ACPR. Therefore the ECM011 can replace a lower gain PAM, this allows the driver to work at a lower output power and provide better ACPR, this improved performance offers more design margin in the transmitter chain. IV. Easy Shut Down and Low Leakage Current The Vcc pin of the PAM is connected directly to the battery, therefore a shut down FET is not required. A voltage is applied to the Vref pin, which then brings up the quiescent current. A Q control pin switches the quiescent current to 50mA for the low output power range. The low power range is below 16dBm; the high power range is from 16dBm to full power. Removing the voltage applied to Vref pin, the quiescent current will drop to a small leakage current, typically <10uA. The low leakage current of the PAM allows for a longer standby time for the phone. V. General Application The PAM requires a minimal number of external components. Both the input and output are dc-blocked within the PAM as shown in the function diagram. The input pin is connected to ground through a shunt inductor within the PAM. ECM011 is designed with a low quiescent current of 50mA typical in the low power mode. At full CDMA power of 28dBm, the operation current will be greater than 500mA. Therefore it is a “quasi class B” or “deep class AB” amplifier. The operation current increases with output power. CDMA signal has a time varying amplitude. The peak power is 4dB above the average RF power (it can be more accurately defined by PDF, power density function). As the peak power is clipped by the amplifier saturation power level, the distortion of the signal will cause the ACPR to deteriorate rapidly. Therefore the P1dB (as tested by a SINE wave) of the amplifier should be over 31dBm to provide good ACPR at 28 dBm of output power. A 100pF capacitor is required adjacent to the Vcc2 pin. In addition, a large capacitor (>uF) is required. The CDMA signal has a time-varying amplitude; therefore the PAM draws on operation current corresponding to the instantaneous demand by the RF power. The large capacitor near-by is the electric charge reservoir, providing current on demand. The long electrical path from battery behaves as a large inductor; the instantaneous demand on current will cause a voltage drop, resulting in poor ACPR. On the evaluation board, a large shunt capacitor is added to protect the Vref pin from power supply over-voltage during ON/OFF. This is similar but different from the ESD. Therefore the rise and fall time test of the power down feature needs to be tested with the shunt capacitor on Vref pin removed. SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 9 PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Conclusion ECM011 offers high gain, low quiescent current, and a small footprint. The InGaP technology provides excellent reliability and quality, assuring the phone set manufacturer a high quality product designed for high volume production. Reference 1. “InGaP HBTs offer Enhanced Reliability”, Barry Lin, Applied Microwave and Wireless. pp 115-116, Dec. 2000 2.” Interaction of Degradation Mechanisms in Be-Doped GaAs HBTs”, Darrell Hill and John Parsey, Digest GaAs IC Symposium, Oct., 2000. pp 241-244 APPLICATION NOTES Please visit our website at www.eiccorp.com to view or download the following documents. You may also call our Customer Service to request a hardcopy. Document # Description AP-000513-000 Tape and Reel Specifications: PAMS AP-000516-000 Application Note Index SS-000398-000 Revision D EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 10