ETC FJX597J

FJX597J
FJX597J
Capacitor Microphone Applications
3
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
2
1
SOT-323
Marking: SCH
1. Drain 2. Source 3. Gate
Si N-channel Junction FET
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VGDO
Gate-Drain Voltage
Parameter
Ratings
-20
Units
V
IG
ID
Gate Current
10
mA
Drain Current
1
PD
Power Dissipation
mA
100
mW
TJ
TSTG
Junction Temperature
150
°C
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVGDO
Parameter
Gate-Drain Breakdown Voltage
Test Condition
IG= -100uA
Min.
-20
Typ.
Max.
Units
V
-0.6
-1.5
V
350
µA
VGS(off)
Gate-Source Cut-off Voltage
VDS=5V, ID=1µA
IDSS
Drain Current
VDS=5V, VGS=0
150
lYFSl
Forward Transfer Admittance
VDS=5V, VGS=0, f=1MHz
0.4
CISS
Input Capacitance
VDS=5V, VGS=0, f=1MHz
3.5
pF
CRSS
Output Capacitance
VDS=5V, VGS=0, f=1MHz
0.65
pF
©2002 Fairchild Semiconductor Corporation
1.2
ms
Rev. B1, March 2002
Symbol
GV
Voltage Gain
Parameter
∆GVV
Reduced Voltage Characteristic
Test Condition
VIN=10mV, f=1KHz
Min.
VIN=10mV, f=1KHz
VCC=4.5V → 1.5V
∆GVF
Frequency Characteristic
f=1KHz to 110Hz
ZIN
Input Resistance
f=1KHz
Output Resistance
f=1KHz
THD
Total Harmonic Distortion
VIN=30mV, f=1KHz
VNO
Output Noise Voltage
VIN=0, A CURVE
-1.2
-3.5
dB
dB
MΩ
700
1
Ω
%
-110
dB
V CC =4.5V
V CC =1.5V
+
33u
B
V
©2002 Fairchild Semiconductor Corporation
Units
dB
-1
RL=1k
OSC
Max.
25
ZO
C in =15p
Typ.
-3
VTVM
A
THD
1k
Rev. B1, March 2002
FJX597J
Specified Test Circuit Ta=25°C unless otherwise noted
FJX597J
Typical Characteristics
500
1000
IDSS = 200µA
450
ID[µA], DRAIN CURRENT
ID[µA], DRAIN CURRENT
400
350
300
250
VGS = 0
200
150
VGS = -0.1V
100
1
2
3
4
5
6
700
600
VGS = 0
500
400
VGS = -0.1V
300
VGS = -0.2V
7
8
9
VGS = -0.3V
VGS = -0.4V
100
VGS = -0.4V
VGS = -0.3V
0
0
800
200
VGS = -0.2V
50
IDSS = 500µA
900
VGS = -0.5V
10
0
1
2
Figure 1. ID-VDS
lFSl [ms], FORWARD TRANSFER ADMITTANCE
VDS = 5V
ID[mA], DRAIN CURRENT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-1.2
-1.0
-0.8
6
7
8
9
10
-0.6
-0.4
-0.2
0.0
VDS = 5V
VGS = 0
f=1kHz
1
0.1
0.1
1
IDSS[mA], DRAIN CURRENT
Figure 4. yFS-IDSS
Figure 3. ID-VGS
-10
100
VDS = 5V
ID = 1µA
-1
CISS[pF], INPUT CAPACITANCE
VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE
5
10
VGS[V], GATE-SOURCE VOLTAGE
- 0.1
4
Figure 2. ID-VDS
1.6
-1.4
3
VDS[V], DRAIN-SOURCE VOLTAGE
VDS[V], DRAIN-SOURCE VOLTAGE
0.0
-1.6
VGS = -0.6V
0
10
1
0.1
1
IDSS[mA], DRAIN CURRENT
Figure 5. VGS(off)-IDSS
©2002 Fairchild Semiconductor Corporation
1
10
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 6. CISS-VDS
Rev. B1, March 2002
FJX597J
Typical Characteristics (Continued)
140
VGS = 0
f = 1MHz
120
PD[mW], POWER DISSIPATION
Crss[pF], OUTPUT CAPACITANCE
10
1
100
80
60
40
20
0
0.1
1
0
10
25
50
75
100
125
VDS[V], DRAIN-SOURCE VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
Figure 1. CRSS-VDS
Figure 2. PD-TA
-110
700
ZO:VCC =4.5V
VI = 0, A CURVE
RL = 1KΩ
-112
IDSS:VDS=5V
-114
-116
-118
-120
10
ZO[Ω ], OUTPUT RESISTANCE
VNO[dB], OUTPUT NOISE VOLTAGE
VNO:VCC =4.5V
VIN = 10mV
f = 1kHz
600
IDSS:VDS=5V
500
400
300
200
100
1000
10
100
IDSS[µA], DRAIN CURRENT
1000
IDSS[µA], DRAIN CURRENT
Figure 3. VNO-IDSS
Figure 4. ZO-IDSS
100
ZI:VCC =4.5V
VIN = 10mV
f = 1kHz
34
IDSS:VDS=5V
32
30
28
26
THD[%], TOTAL HARMONIC DISTORTION
36
ZI[MΩ ], INPUT RESISTANCE
150
o
THD:VCC = 4.5V
VIN = 30mV
f = 1kHz
IDSS:VDS = 5V
10
1
10
100
IDSS[µA], DRAIN CURRENT
Figure 5. ZI-IDSS
©2002 Fairchild Semiconductor Corporation
1000
100
1000
IDSS[µA], DRAIN CURRENT
Figure 6. THD-IDSS
Rev. B1, March 2002
FJX597J
Typical Characteristics (Continued)
10
∆GVV:VCC = 4.5V → 1.5V
VIN = 10mV
f = 1kHz
IDSS:VDS=5V
2
GV:VCC = 4.5V
VIN = 10mV
RL = 1kΩ
8
6
GV[dB], VOLTAGE GAIN
∆ GVV - I DSS [dB],
REDUCED VOLTAGE CHARACTERISTIC
4
0
-2
-4
f = 1KHz
IDSS:VDS = 5V
4
2
0
-2
-4
-6
-8
-6
10
100
-10
10
1000
100
1000
IDSS[µA], DRAIN CURRENT
IDSS[µA], DRAIN CURRENT
Figure 13. ∆GVV-IDSS
Figure 14. GVV-IDSS
THD[%], TOTAL HARMONIC DISTORTION
100
THD:VCC = 4.5V
f = 1kHz
IDSS:VDS = 5V
10
IDSS = 100µA
IDSS = 200µA
IDSS = 400µA
1
0.1
0
40
80
120
160
200
240
VIN[mV], INPUT VOLTAGE
Figure 15. THD-VIN
©2002 Fairchild Semiconductor Corporation
Rev. B1, March 2002
FJX597J
Package Demensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.95±0.15
0.90
±0.10
+0.05
0.05 –0.02
1.00±0.10
1.30±0.10
0.275±0.100
3°
+0.04
0.135 –0.01
0.10 Min
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, March 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
SMP™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5