FT04...D SURFACE MOUNT TRIAC DPAK (Plastic) On-State Current Gate Trigger Current 4 Amp < 5 mA to < 35 mA Off-State Voltage MT2 MT1 200 V ÷ 600 V This series of TRIACs uses a high performance PNPN technology. MT2 These devices are intended for AC control applications using surface mount technology. G The high commutation performances combined with high sensitivity, make them perfect in all applications like solid state relays, home appliances, power tools, small motor drives... Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Min. IT(RMS) ITSM ITSM I2t IGM PGM PG(AV) di/dt RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current All Conduction Angle, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. IG = 2 x IGT Tr ≤ 200 ns, F = 120 Hz Tj = 125 ºC 4 31 30 5.1 Tj Tstg TL Operating Temperature Storage Temperature Lead Temperature for Soldering SYMBOL VDRM VRRM PARAMETER Repetitive Peak Off State Voltage 4 3 1 50 -40 -40 4.5 mm from case, 10s max. Max. +125 +150 260 VOLTAGE B 200 D 400 Unit A A A A 2s A W W A/µs ºC ºC ºC Unit M 600 V Jul - 03 FT04...D SURFACE MOUNT TRIAC Electrical Characteristics SYMBOL IGT (1) PARAMETER Quadrant CONDITIONS Gate Trigger Current VD = 12 VDC , RL = 30Ω Tj = 25 ºC IDRM /IRRM Off-State Leakage Current VR = VDRM , VR = VRRM , Tj = 125 ºC Tj = 25 ºC Vto (2) Rd(2) VTM (2) VGT VGD IH (2) IL Tj = 125 ºC Tj = 125 ºC IT = 5.5 Amp, tp = 380 µs, VD = 12 VDC , RL = 30Ω, VD = VDRM , RL = 3.3KΩ, IT = 100 mA , Gate open, Tj = 25 ºC Tj = 25 ºC Tj = 125 ºC Tj = 25 ºC Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current IG = 1.2 IGT, Tj = 25 ºC dv / dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open Unit SENSITIVITY Q1÷Q3 MAX Q4 MAX MAX MAX MAX MAX Q1÷Q3 MAX Q1÷Q3 MIN MAX Q1,Q3 MAX Q2 MAX MIN 07 5 7 11 14 25 35 08 10 1 5 0.9 120 1.6 1.3 0.2 10 10 15 20 mA mA mA µA V mΩ V V V mA mA 15 25 35 20 25 50 30 50 60 100 200 400 V/µs Tj = 125 ºC (dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs Tj = 125 ºC Tj = 125 ºC Tj = 125 ºC (dv/dt)c= 10 V/µs without snubber tgd Rth(j-c) Rth(j-a) Gate Controlled Delay Time IG = 2xIGT, VD = VDRM diG/dt = 3 A/µs, ITM = 5.5 A MIN 1.8 MIN 0.9 MIN Q1÷Q3 TYP 2.7 2.0 - 4.4 2.7 2 - A/ms 2.5 µs Thermal Resistance Junction-Case 2.6 ºC/W Thermal Resistance Junction-Ambient 70 ºC/W (1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F T 04 11 B D 00 TR FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Jul - 03 FT04...D SURFACE MOUNT TRIAC Fig. 1: Maximum power dissipation versus RMS on-state current Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) T case (ºC) P (W) 6.0 6.0 Rth=10 ºC/W α = 180 º Rth=5 ºC/W Rth=0 ºC/W -95 5.0 5.0 α = 120 º Rth=15 ºC/W 4.0 4.0 -100 α = 90 º 3.0 3.0 α = 60 º 2.0 1.0 2.0 α = 30 º α 180 º α 1.0 α = 180 º IT(RMS)(A) 0.0 -105 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -110 Tamb (ºC) 0 10 20 30 40 50 60 70 80 90 100 110 Fig. 3: RMS on-state current versus ambient temperature Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. I T(RMS) (A) K = [(Zth(j-c) / Rth (j-c)] 4.5 1.00 Rth(j-a) = Rth(j-c) 4.0 3.5 0.50 3.0 2.5 2.0 Rth(j-a) = 55 ºC/W S(Cu) = 1.75 cm2 1.5 0.20 1.0 0.5 α = 180 º Tamb (ºC) 0.0 0 10 20 30 40 50 60 70 80 90 100 110 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). 0.10 1E-3 tp (s) 1E-2 1E-1 1E+0 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 2.5 30 Tj initial = 25 ºC F = 50 Hz 25 2.0 IGT 20 1.5 15 IH 1.0 10 0.5 5 Tj (ºC) 0.0 -40 -20 0 20 40 60 80 100 120 Number of cycles 0 1 10 100 1000 Jul - 03 FT04...D SURFACE MOUNT TRIAC Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). ITSM(A). I2t (A2s) Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (ºC/W) ITM(A) 100 100 30.0 Tj initial = 25 ºC ITSM 10.0 80 Tj max Vto = 0.95 V Rd = 0.140mΩ Tj = Tj max. 60 10 I2 t 1.0 40 Tj = 25 ºC 20 1 tp(ms) 1 2 5 10 VTM(V) 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 S(Cu) (cm2) 0 0 2 4 6 8 10 12 14 16 18 20 Jul - 03 FT04...D SURFACE MOUNT TRIAC PACKAGE MECHANICAL DATA DPAK TO 252-AA REF. 8º±2º A ø1x0.15 E1 c2 E L3 8º±2º 8º±2º D1 D H 1.6 8º±2º L4 8º±2º L e b L2 A1 4.57 Typ. 1.067±0.013 A A1 b c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 Min. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 DIMENSIONS Milimeters Nominal 2.3±0.18 0.12 0.75±0.1 0.8±0.013 6.1±0.1 6.58±0.14 5.36±0.1 2.28BSC 9.90±0.15 2.6±0.05 0.5±0.013 1.20±0.05 0.83±0.1 Max. 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 Marking: type number Weight: 0.2 g FOOT PRINT 6.7 6.7 3 3 1.6 1.6 2.3 2.3 Jul - 03