GF6968E H C EN ET R T ENF Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET Low VGS(th) VDS 20V RDS(ON) 22mΩ ID 6.5A ® G 0.122 (3.10) 0.114 (2.90) 0.005 (0.127) 0.177 (4.50) 0.170 (4.30) D D G1 Pin 1 = D Pin 2 = S1 Pin 3 = S1 Pin 4 = G1 Pin 5 = G2 Pin 6 = S2 Pin 7 = S2 Pin 8 = D G2 0.028 (0.70) 0.020 (0.50) 5 8 New TSSOP-8 ct u d Pro S2 S1 0.028 (0.70) 0.020 (0.50) 0.260 (6.60) 0.244 (6.20) 1 4 0.260 (6.60) min. 0.025 (0.65) 0 °– 8 ° 0.012 (0.30) 0.010 (0.25) 0.012 (0.30) 0.010 (0.25) 0.047 (1.20) 0.041 (1.05) 0.025 (0.65) Mounting Pad Layout Dimensions in inches and (millimeters) 0.006 (0.15) 0.002 (0.05) 0.204 (5.20) Mechanical Data Features Case: TSSOP-8 Package Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li-ion battery packs use • Designed for battery-switch applications Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)(1) Pulsed Drain Current TA = 25°C TA = 70°C Maximum Power Dissipation(1) Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. A = 25°C unless otherwise noted) Limit Unit VDS 20 VGS ±12 ID 6.5 A IDM 30 A PD 1.5 0.96 W TJ, Tstg –55 to 150 °C RθJA 83 °C/W V 4/11/01 GF6968E Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.60 0.85 – V IGSS VGS = ± 12V, VDS = 0V – – ±10 µA IDSS VDS = 20V, VGS = 0V – – 1 µA ID(on) VDS ≥ 5V, VGS = 4.5V 30 – – A VGS = 4.5V, ID = 6.5A – 17.5 22 VGS = 2.5V, ID = 5.5A – 22 30 VDS = 10V, ID = 6.5A – 30 – – 15.5 30 – 2.0 – – 3.5 – – 0.45 0.60 – 0.65 0.85 – 4.5 6.0 – 1.7 2.2 – 1360 – – 220 – – 130 – Static Gate Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge VDS = 10V, VGS = 4.5V Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Fall Time ID = 6.5A VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V RG = 6Ω tf Input Capacitance (1) Output Capacitance Ciss (1) VDS = 10V, VGS = 0V Coss Reverse Transfer Capacitance (1) f = 1.0 MHz Crss nC µs pF Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage IS – – – 1.5 A VSD IS = 1.5A, VGS = 0V – 0.61 1.2 V Notes: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% (2) For MOSFET portion only VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF6968E Ratings and Characteristic Curves (T Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 30 VGS= 4.5V 3.5V 25 VDS = 10V 25 3.0V ID -- Drain Current (A) ID -- Drain Source Current (A) 30 2.5V 20 2.0V 15 1.5V 10 5 20 15 TJ = 125°C 10 --55°C 5 25°C 1.0V 0 0 0 1 3 4 0 0.5 1.0 2.0 2.5 Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 3.0 0.035 ID = 250µA 1.0 0.9 0.8 0.7 0.6 0.5 --50 0.03 0.025 VGS = 2.5V 0.02 0.015 VGS = 4.5V 0.01 0.005 0.4 0 --25 0 25 50 75 100 125 0 150 5 10 15 20 25 Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 0.07 VGS = 4.5V ID = 6.5A ID = 6.5A RDS(ON) -- On-Resistance (Ω) 0.06 1.4 1.2 1 0.8 0.05 0.04 0.03 TJ = 125°C 0.02 TJ = 25°C 0.01 0 0.6 --50 30 ID -- Drain Current (A) TJ -- Junction Temperature (°C) RDS(ON) -- On-Resistance (Normalized) 1.5 VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) 1.1 2 VDS -- Drain-to-Source Voltage (V) --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 1 2 3 4 VGS -- Gate-to-Source Voltage (V) 5 GF6968E Ratings and Characteristic Curves (T Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET = 25°C unless otherwise noted) A Fig. 8 – Source-Drain Diode Forward Voltage Fig. 7 – Gate Charge 100 VGS = 0V VDS = 10V ID = 6.5A 4 IS -- Source Current (A) VGS -- Gate-to-Source Voltage (V) 5 3 2 10 --55°C TJ = 125°C 1 25°C 0.1 1 0 0 4 8 12 16 20 0.01 0 Qg -- Gate Charge (nC) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD -- Source-to-Drain Voltage (V) Fig. 9 – Transient Thermal Impedance Fig. 10 – Power vs. Pulse Duration 25 20 15 10 1. Duty Cycle, D = t1/t2 2. RθJA(t) = RθJA(norm) *RθJA 3. RθJA = 93°C/W (on 1-in2 2oz. Cu. FR-4) 4. TJ -- TA = PDM* RθJA(t) 5 0 0.01 Fig. 11 – Maximum Safe Operating Area 100 ID -- Drain Current (A) 10 0µ s 1m 10 s 10 10 RDS(ON) Limit ms 0m s 1s 1 10s 0.1 0.01 0.1 DC VGS = 4.5V Single Pulse on 1-in2 2oz Cu. TA = 25°C 1 10 VDS -- Drain-Source Voltage (V) 100 0.1 1 10 100