4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 2 3 EMITTER 4 1 DESCRIPTION H11A817 SCHEMATIC The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES ANODE 1 CATHODE 2 4 COLLECTOR 3 EMITTER • Compact 4-pin package • Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: 50-600% H11AA814A: 50-150% H11A817A: 80-160% H11A817B: 130-260% H11A817C: 200-400% H11A817D: 300-600% APPLICATIONS H11AA814 Series • AC line monitor • Unknown polarity DC sensor • Telephone line interface H11A817 Series • Power supply regulators • Digital logic inputs • Microprocessor inputs © 2002 Fairchild Semiconductor Corporation Page 1 of 8 5/30/02 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES Parameter H11A817 SERIES Symbol Device Value Units Storage Temperature TSTG All -55 to +150 °C Operating Temperature TOPR All -55 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C PD All 200 mW Continuous Forward Current IF All 50 mA Reverse Voltage VR H11A817, H11A817A, H11A817B, H11A817C, H11A817C, H11A817D 5 V IF(pk) All 1.0 A PD All Collector-Emitter Voltage VCEO Emitter-Collector Voltage TOTAL DEVICE Total Device Power Dissipation (-55°C to 50 °C) EMITTER Forward Current - Peak (1 µs pulse, 300 pps) 100 mW 1.33 mW/°C All 35 V VECO All 6 V Continuous Collector Current IC All 50 mA Detector Power Dissipation (25°C ambient) Derate above 25°C PD All 150 mW 2.0 mW/°C LED Power Dissipation (25°C ambient) Derate above 25°C DETECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol EMITTER (IF = 20 mA) Input Forward Voltage VF (IF = ±20 mA) Device Min Typ Max H11A817, H11A17A, H11A817B, H11A817C, H11A817D 1.2 1.5 H11AA814 1.2 1.5 .001 10 Unit V H11A817, H11A17A, Reverse Leakage Current (VR = 5.0 V) IR H11A817B, H11A817C, µA H11A817D DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO ALL 35 100 V Emitter-Collector Breakdown Voltage (IE = 100 µA, IF = 0) BVECO ALL 6 10 V Collector-Emitter Dark Current (VCE = 10V, IF = 0) ICEO ALL .025 Collector-Emitter Capacitance (VCE = 0 V, f = 1 MHz) CCE ALL 8 © 2002 Fairchild Semiconductor Corporation Page 2 of 8 100 nA pF 5/30/02 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristic Test Conditions Symbol Device Min (IF = ±1 mA, VCE = 5 V) (note 1) CTR H11AA814 20 (IF = ±1 mA, VCE = 5 V) (note 1) CTR H11AA814A 50 150 % H11A817 50 600 % H11A817A 80 160 % H11A817B 130 260 % H11A817C 200 400 % H11A817D 300 600 % Current Transfer Ratio (IF = 5 mA, VCE = 5 V) (note 1) Collector-Emitter Saturation Voltage CTR Typ Max Unit 300 % (IC = 1 mA, IF = ±20 mA) VCE (SAT) ALL .1 .2 V Rise Time (IC = 2 mA, VCE = 2 V, RL = 100V) (note 1) TR ALL 2.4 18 µs Fall Time (IC = 2 mA, VCE = 2 V, RL = 100V) (note 1) TF ALL 2.4 18 µs AC Characteristic ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Input-Output Isolation Voltage (note 3) (II-O [ 1 µA, 1 min.) VISO 5300 Vac(rms) Isolation Resistance (VI-O = 500 VDC) RISO 1011 Ω (VI-O = &, f = 1 MHz) CISO Isolation Capacitance Typ 0.5 Max Units pf NOTES 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to Figure 8. 3. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. © 2002 Fairchild Semiconductor Corporation Page 3 of 8 5/30/02 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS NORMALIZED CTR CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C NORMALIZED CTR H11AA814 SERIES Fig. 1 Normalized CTR vs. Forward Current 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 30 25 H11A817 SERIES Fig. 2 Normalized CTR vs. Ambient Temperature 1.2 IF = 10 mA 1 IF = 5 mA 0.8 0.6 0.4 -50 -25 IF - FORWARD CURRENT (mA) 0 +25 +50 +75 +100 TA - AMBIENT TEMPERATURE (˚C) Fig. 3 Collector-Emitter Saturation Voltage vs. Ambient Temperature Fig. 4 Forward Voltage vs. Forward Current IF = 20 mA IC = 1 mA 1.7 .12 VF - FORWARD VOLTAGE (V) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) .14 .1 .08 .06 .04 .02 0 -50 1.5 1.3 T = 55˚C 1.1 T = 25˚C 0.9 T = 100˚C 0.7 0.5 -25 0 25 50 75 100 125 0.1 TA - AMBIENT TEMPERATURE (˚C) 0.2 0.5 1.0 2.0 5 10 20 50 100 IF - FORWARD CURRENT (mA) Fig. 5 Collector Current vs. Collector-Emitter Voltage IC - COLLECTOR CURRENT (mA) 25 IF = 20 mA 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA 0 0 1 2 3 4 5 6 7 8 9 10 VCE - COLLECTOR-EMITTER VOLTAGE (V) © 2002 Fairchild Semiconductor Corporation Page 4 of 8 5/30/02 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES Fig. 7 Rise and Fall Time vs. Load Resistor 1000 10 IF = 5 mA VCC = 5 V TA = 25˚C VCE = 10 V 1 Tr/ Tf- RISE AND FALL TIME (µs) ICEO - COLLECTOR-EMITTER CURRENT (µA) Fig. 6 Collector Leakage Current vs. Ambient Temperature 10-1 10-2 10-3 10-4 toff tf 100 10 ton 1 tr 10-5 10-6 0.1 25 0 50 75 100 0.1 125 1 10 100 R - LOAD RESISTOR (KV) TA - AMBIENT TEMPERATURE (˚C) Figure 8. Switching Time Test Circuit and Waveforms TEST CIRCUIT WAVE FORMS VCC = 10V INPUT PULSE IC IF INPUT RL = 100Ω 10% OUTPUT OUTPUT PULSE 90% tr tf Adjust IF to produce IC = 2 mA Recommended Thermal Reflow Profile for Surface Mount DIP Package Temperature (°C) 225°C 250 220°C: 10 sec to 40 sec 200 150 Time > 183°C: 120 sec to 180 sec 100 50 0 0 © 2002 Fairchild Semiconductor Corporation 1 2 Page 5 of 8 3 4 5 Time (Min) 5/30/02 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES Package Dimensions (Through Hole) H11A817 SERIES Package Dimensions (Surface Mount) 0.270 (6.86) 0.250 (6.35) 0.270 (6.86) 0.250 (6.35) SEATING PLANE 0.200 (5.08) 0.115 (2.92) 0.200 (5.08) 0.115 (2.92) 0.070 (1.78) 0.045 (1.14) 0.154 (3.90) 0.120 (3.05) 0.300 (7.62) TYP 0.190 (4.83) 0.175 (4.45) SEATING PLANE 0.270 (6.86) 0.250 (6.35) 0.190 (4.83) 0.175 (4.45) 0.020 (0.51) MIN 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 15° 0.100 (2.54) TYP 0.315 (8.00) MIN 0.405 (10.30) MAX 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 0.300 (7.62) typ Lead Coplanarity 0.004 (0.10) MAX Package Dimensions (0.4” Lead Spacing) Footprint Dimensions (Surface Mount) 0.070 (1.78) 0.270 (6.86) 0.250 (6.35) SEATING PLANE 0.060 (1.52) 0.190 (4.83) 0.175 (4.45) 0.200 (5.08) 0.115 (2.92) 0.270 (6.86) 0.250 (6.35) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54) 0.154 (3.90) 0.120 (3.05) 0.030 (0.76) 0.004 (0.10) MIN 0.100 (2.54) TYP 0.400 (10.16) TYP 0.016 (0.40) 0.008 (0.20) 0 to 15° NOTE All dimensions are in inches (millimeters) © 2002 Fairchild Semiconductor Corporation Page 6 of 8 5/30/02 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES ORDERING INFORMATION Option Order Entry Identifier Description S .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and reel W .W 0.4" Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4" Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape & Reel Carrier Tape Specifications 12.0 ± 0.1 5.00 ± 0.20 0.30 ± 0.05 4.0 ± 0.1 4.0 ± 0.1 Ø1.55 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 13.2 ± 0.2 4.95 ± 0.20 0.1 MAX 10.30 ± 0.20 Ø1.6 ± 0.1 User Direction of Feed NOTE All dimensions are in millimeters © 2002 Fairchild Semiconductor Corporation Page 7 of 8 5/30/02 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2002 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 8 of 8 5/30/02