HB56U232 Series 2,097,152-word × 32-bit High Density Dynamic RAM Module Description The HB56U232 is a 2 M × 32 dynamic RAM module, mounted 16 pieces of 4-Mbit DRAM (HM514405CS) sealed in SOJ package. An outline of the HB56U232 is 72-pin single in-line package. Therefore, the HB56U232 makes high density mounting possible without surface mount technology. The HB56U232 provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ on the module board. The HB56U232 offers Extended Data Out (EDO) page mode as a high speed access mode. Features • • • • • • • • 72-pin single in-line package — Lead pitch: 1.27 mm Single 5 V (±5%) supply High speed — Access time: tRAC = 60/70 ns (max) Low power dissipation — Active mode: 4.83/4.41 W (max) — Standby mode: 168 mW (max) EDO page mode capability 1,024 refresh cycles: 16 ms 2 variations of refresh — RAS-only refresh — CAS-before-RAS refresh TTL compatible This Material Copyrighted by Its Respective Manufacturer HB56U232 Series Ordering Information Type No. Access time Package Contact pad HB56U232B-6C 60 ns 72-pin SIP socket type Gold HB56U232B-7C 70 ns HB56U232SB-6C 60 ns 72-pin SIP socket type Solder HB56U232SB-7C 70 ns Pin Arrangement 1Pin 36Pin 37Pin 72Pin Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name 1 VSS 19 NC 37 NC 55 DQ11 2 DQ0 20 DQ4 38 NC 56 DQ27 3 DQ16 21 DQ20 39 VSS 57 DQ12 4 DQ1 22 DQ5 40 CAS0 58 DQ28 5 DQ17 23 DQ21 41 CAS2 59 VCC 6 DQ2 24 DQ6 42 CAS3 60 DQ29 7 DQ18 25 DQ22 43 CAS1 61 DQ13 8 DQ3 26 DQ7 44 RAS0 62 DQ30 9 DQ19 27 DQ23 45 RAS1 63 DQ14 10 VCC 28 A7 46 NC 64 DQ31 11 NC 29 NC 47 WE 65 DQ15 12 A0 30 VCC 48 NC 66 PD5 13 A1 31 A8 49 DQ8 67 PD1 14 A2 32 A9 50 DQ24 68 PD2 15 A3 33 RAS3 51 DQ9 69 PD3 16 A4 34 RAS2 52 DQ25 70 PD4 17 A5 35 NC 53 DQ10 71 NC 18 A6 36 NC 54 DQ26 72 VSS 2 This Material Copyrighted by Its Respective Manufacturer HB56U232 Series Pin Description Pin Name Function A0 – A9 Address Input: Row address: Column address: Refresh address: DQ0 – DQ31 Data-in/Data-out CAS0 to CAS3 Column Address Strobe RAS0 to RAS3 Row Address Strobe WE Read/Write Enable VCC Power Supply (+5 V) VSS Ground PD1 to PD4 Presence detect pin PD5 Presence detect pin for EDO NC No Connection A0 A0 A0 A0 – – – – A9 A9 A9 A9 Presence Detect Pin Arrangement Function Pin No. Pin Name 60 ns 70 ns 66 PD5 VSS VSS 67 PD1 NC NC 68 PD2 NC NC 69 PD3 NC VSS 70 PD4 NC NC 3 This Material Copyrighted by Its Respective Manufacturer HB56U232 Series Block Diagram CAS0 RAS1 RAS0 DQ0 to DQ3 DQ4 to DQ7 4 4 RAS CAS I/O1 to I/O4 D0 OE RAS CAS I/O1 to I/O4 D8 OE RAS CAS I/O1 to I/O4 D1 OE RAS CAS I/O1 to I/O4 D9 OE RAS CAS I/O1 to I/O4 D2 OE RAS CAS I/O1 to I/O4 D10 OE RAS CAS I/O1 to I/O4 D3 OE RAS CAS I/O1 to I/O4 D11 OE CAS1 DQ8 to DQ11 DQ12 to DQ15 4 4 CAS2 RAS3 RAS2 DQ16 to DQ19 DQ20 to DQ23 4 4 RAS CAS I/O1 to I/O4 D4 OE RAS CAS I/O1 to I/O4 D12 OE RAS CAS I/O1 to I/O4 D5 OE RAS CAS I/O1 to I/O4 D13 OE RAS CAS I/O1 to I/O4 D6 OE RAS CAS I/O1 to I/O4 D14 OE RAS CAS I/O1 to I/O4 D7 OE RAS CAS I/O1 to I/O4 D15 OE CAS3 DQ24 to DQ27 DQ28 to DQ31 A0 to A9 4 4 10 D0 to D15 WE D0 to D15 VCC D0 to D15 CO0 to C19 VSS D0 to D15 4 This Material Copyrighted by Its Respective Manufacturer *D0 to D15 : HM514405 HB56U232 Series Absolute Maximum Ratings Parameter Symbol Value Unit Voltage on any pin relative to V SS VT –1.0 to +7.0 V Supply voltage relative to VSS VCC –1.0 to +7.0 V Short circuit output current Iout 50 mA Power dissipation Pt 8 W Operating temperature Topr 0 to +70 °C Storage temperature Tstg –55 to +125 °C Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Symbol Min Typ Max Unit Supply voltage VSS 0 0 0 V VCC 4.75 5.0 5.25 V 1 Input high voltage VIH 2.4 — 5.5 V 1 Input low voltage VIL –1.0 — 0.8 V 1 Note: 1. All voltage referred to VSS . 5 This Material Copyrighted by Its Respective Manufacturer Note HB56U232 Series DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 5%, VSS = 0 V) HB56U232 60 ns 70 ns Parameter Symbol Min Max Min Max Unit Test conditions Notes Operating current I CC1 — 920 — 840 mA t RC = min 1, 2 Standby current I CC2 — 32 — 32 mA TTL interface RAS, CAS = VIH Dout = High-Z — 16 — 16 mA CMOS interface RAS, CAS ≥ VCC – 0.2 V Dout = High-Z RAS-only refresh current I CC3 — 920 — 840 mA t RC = min 2 Standby current I CC5 — 80 — 80 mA RAS = VIH, CAS = VIL Dout = enable 1 CAS-before-RAS refresh current I CC6 — 920 — 840 mA t RC = min EDO page mode current I CC4 — 1080 — 1000 mA Input leakage current I LI –10 10 –10 10 µA 0 V ≤ Vin ≤ 7.0 V Output leakage current I LO –10 10 –10 10 µA 0 V ≤ Vout ≤ 7.0 V Dout = disable Output high voltage VOH 2.4 VCC 2.4 VCC V High Iout = –2 mA Output low voltage VOL 0 0.4 0 0.4 V Low Iout = 2 mA t HPC = min 1, 3 Notes: 1. I CC depends on output load condition when the device is selected, ICC max is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while CAS = VIH. Capacitance (Ta = 25°C, VCC = 5 V ± 5%) Parameter Symbol Typ Max Unit Notes Input capacitance (Address) CI1 — 95 pF 1 Input capacitance (WE) CI2 — 127 pF 1 Input capacitance (RAS) CI3 — 43 pF 1 Input capacitance (CAS) CI4 — 43 pF 1 I/O capacitance (DQ0 to 31) CI/O — 29 pF 1, 2 Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. RAS and CAS = VIH to disable Dout. 6 This Material Copyrighted by Its Respective Manufacturer HB56U232 Series AC Characteristics • • Refer to the HM514405C Series data sheet. The HB56U232 writes data only in early write cycle (t WCS ≥ tWCS (min)). Delayed write cycle is not available (OE pin is fixed to VSS). Physical Outline Unit: mm/inch 107.95 4.25 72 6.35 0.25 44.45 1.75 6.35 0.25 2.54 min 0.10 min 1.27 typ. 0.05 typ. 2.03 0.08 B 0.40 10.16 1 1.27 typ. 0.05 typ. 44.45 1.75 R 1.57 R 0.062 R 1.57 R 0.062 1 72 Detail A Detail B 60ns 70ns 2.54 min. 0.10 1.07 max. 0.042 7 This Material Copyrighted by Its Respective Manufacturer 0.25 max. 0.01 5.72 min. 0.225 min. 25.40 1.00 3.175 0.125 6.35 0.25 2–φ 9.14 max. 0.36 max. A 3.17 min. 0.125 min. 101.19 3.98