HL6312G/13G AlGaInP Laser Diodes ADE-208-190G (Z) 8th Edition Dec. 2000 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high reliability. Features • • • • • • Visible light output: λp = 635 nm Typ (nearly equal to He-Ne Gas Laser) Optical output power: 5 mW CW Low Operating voltage: 2.7 V Max Single longitudinal mode Built-in photodiode for monitoring laser output TM mode oscillation Package Type • HL6312G/13G: G2 Internal Circuit • HL6312G 1 Internal Circuit • HL6313G 1 3 PD LD 2 3 PD LD 2 HL6312G/13G Absolute Maximum Ratings (TC = 25°C) Item Symbol Rated Value Unit Optical output power PO 5 mW Pulse optical output power PO(pulse) 6* mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +50 °C Storage temperature Tstg –40 to +85 °C Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50% Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 5 — — mW Kink free Threshold current Ith 20 45 70 mA Operating current I OP — 55 85 mA PO = 5 mW Operating voltage VOP — — 2.7 V PO = 5 mW Beam divergence parallel to the junction θ// 5 8 11 deg. PO = 5 mW Beam divergence parpendicular to the junction θ⊥ 25 31 37 deg. PO = 5 mW Astigmatism AS — 8 — µm PO = 5 mW, NA = 0.55 Lasing wavelength λp 625 635 640 nm PO = 5 mW Monitor current IS 0.2 0.4 0.8 mA PO = 5 mW, VR(PD) = 5 V 2 HL6312G/13G Typical Characteristic Curves Monitor Current vs. Optical Output Power TC = 25°C VR(PD) = 5 V TC = 0°C 4 0.5 Monitor current, IS (mA) Optical output power, PO (mW) Optical Output Power vs. Forward Current 5 3 50°C 25°C 2 1 0 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 0 Forward current, IF (mA) 1 2 3 4 5 Optical output power, PO (mW) Lasing Spectrum TC = 25°C Far Field Pattern PO = 5 mW PO = 5 mW Parallel −40 −20 0 20 Angle, θ (deg.) Relative intensity Relative intensity Perpendicular 40 PO = 3 mW PO = 1 mW 625 630 635 640 645 Wavelength, λp (nm) 650 3 HL6312G/13G Typical Characteristic Curves (cont) Threshold Current vs. Case Temperature 100 Slope Efficiency vs. Case Temperature Threshold current, Ith (mA) Slope efficiency, ηs (mW/mA) 0.5 10 0.4 0.3 0.2 0.1 0 0 10 20 30 40 50 0 Monitor Current vs. Case Temperature PO = 5 mW VR(PD) = 5 V Lasing wavelength, λp (nm) Monitor current, IS (mA) 1 0.6 0.4 0.2 0 0 10 20 30 40 Case temperature, TC (°C) 4 20 30 40 50 Case temperature, TC (°C) Case temperature, TC (°C) 0.8 10 50 Lasing Wavelength vs. Case Temperature 646 PO = 5 mW 644 642 640 638 636 634 632 630 0 10 20 30 40 Case temperature, TC (°C) 50 HL6312G/13G Typical Characteristic Curves (cont) Polarization Ratio vs. Optical Output Power 500 TC = 25°C Astigmatism vs. Optical Output Power 20 Astigmatism, AS (µm) TC = 25°C NA = 0.55 400 Polarization ratio 15 10 5 NA = 0.4 300 NA = 0.25 200 100 0 0 0 1 2 3 4 5 1 2 3 4 5 Optical output power, PO (mW) Optical output power, PO (mW) Electrostatic Destruction (MIL method) Electrostatic Destruction (MIL method) 100 100 LD Forward N = 10pcs judgment : ∆IO ≥ 10% LD Reverse N = 10pcs judgment : ∆IO ≥ 10% 80 Survival rate (%) 80 Survival rate (%) 0 60 40 20 60 40 20 0 0 0 200 400 600 800 1000 1200 Applied voltage (V) 0 1000 2000 3000 4000 Applied voltage (V) 5 HL6312G/13G Package Dimensions φ 9.0 +0 –0.025 1.0 ± 0.1 0.4 +0.1 –0 Unit: mm Glass φ 7.2 +0.3 –0.2 φ 6.2 ± 0.2 (φ2.0) 3.5 ± 0.2 9±1 2.45 Emitting Point 3 – φ 0.45 ± 0.1 1 2 1.5 ± 0.1 0.3 (90°) (0.65) 3 3 1 2 φ 2.54 ± 0.35 Hitachi Code JEDEC EIAJ Mass (reference value) 6 LD/G2 — — 1.1 g HL6312G/13G Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 7 HL6312G/13G Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8