HL6327MG/28MG Low Operating Current Visible Laser Diode ADE-208-782B (Z) 3rd Edition Dec. 2000 Description The HL6327MG/28MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Application • Laser leveler • Laser scanner • Measurement Features • • • • • • Visible light output Optical output power Low operating current Low operating voltage Operating temperature TM mode oscillation : 635 nm Typ (nearly equal to He-Ne gas laser) : 5 mW CW : 40 mA Typ : 2.4 V Max : +50°C Package Type • HL6327MG/28MG: MG Internal Circuit • HL6327MG 1 Internal Circuit • HL6328MG 1 3 PD LD 2 3 LD PD 2 HL6327MG/28MG Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 5 mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +50 °C Storage temperature Tstg –40 to +85 °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Condition Optical output power PO 5 — — mW Kink free Threshold current Ith — 30 50 mA Operating current I Op — 40 60 mA PO = 5 mW Operating voltage VOP — 2.2 2.4 V PO = 5 mW Slope efficiency ηs 0.3 0.5 0.8 mW/mA 3 (mW) / (I(4mW) – I (1mW)) Beam divergence parallel to the junction θ// 6 8 11 deg. PO = 5 mW Beam divergence parpendicular to the junction θ⊥ 25 31 37 deg. PO = 5 mW Lasing wavelength λp 630 635 640 nm PO = 5 mW Monitor current IS 0.02 0.07 0.12 mA PO = 5 mW, VR(PD) = 5 V 2 HL6327MG/28MG Typical Characteristic Curves 5 Monitor current, IS (mA) Optical output power, PO (mW) Optical Output Power vs. Forward Current 6 TC = −10°C 4 40°C 50°C 25°C 3 2 1 0 0 10 20 30 40 50 60 70 Forward current, IF (mA) 80 Monitor Current vs. Optical Output Power 0.12 VR(PD) = 5 V T = 25°C 0.10 C 0.08 0.06 0.04 0.02 0 1 2 3 4 Optical output power, PO (mW) 0 5 Lasing Spectrum TC = 25°C Far Field Pattern PO = 5 mW 0.8 TC = 25°C PO = 5 mW Perpendicular Relative intensity Relative intensity 1.0 0.6 0.4 0.2 Parallel 0 −40 −30 −20 −10 0 10 20 Angle, θ (deg.) 30 PO = 3 mW 40 PO = 1 mW 630 635 640 645 Wavelength, λp (nm) 650 3 HL6327MG/28MG Typical Characteristic Curves (cont) Slope Efficiency vs. Case Temperature 1.0 Slope efficiency, ηs (mW/mA) Threshold current, Ith (mA) Threshold Current vs. Case Temperature 100 50 20 10 −10 0 10 20 30 40 Case temperature, TC (°C) Monitor Current vs. Case Temperature 0.20 0.10 0.05 0 −10 4 Lasing wavelength, λp (nm) Monitor current, IS (mA) 0.15 30 40 20 0 10 Case temperature, TC (°C) 50 0.6 0.4 0.2 0 −10 50 PO = 5 mW VR(PD) = 5 V 0.8 0 40 10 20 30 Case temperature, TC (°C) 50 Lasing Wavelength vs. Case Temperature 650 PO = 5 mW 645 640 635 630 −10 30 40 20 0 10 Case temperature, TC (°C) 50 HL6327MG/28MG Typical Characteristic Curves (cont) Astigmatism vs. Optical Output Power Polarization Ratio vs. Optical Output Power 500 TC = 25°C NA = 0.4 400 5 4 Polarization ratio Astigmatism, AS (µm) TC = 25°C NA = 0.4 3 2 1 0 300 200 100 0 4 1 2 3 Optical output power PO (mW) 0 5 0 100 80 80 60 40 Forward (C : 100 pF, R : 1.5 kΩ) N = 10 pcs judgment : ∆IO ≤ 10% 20 0 0 400 200 Applied voltage (V) 60 40 Reverse (C : 100 pF, R : 1.5 kΩ) N = 10 pcs judgment : ∆IO ≤ 10% 20 600 5 Electrostatic Destruction (Reverse) 100 Survival rate (%) Survival rate (%) Electrostatic Destruction (Forward) 3 4 1 2 Optical output power, PO (mW) 0 0 0.5 2.5 1 2 1.5 Applied voltage (kV) 3 5 HL6327MG/28MG Package Dimensions Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90°) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) 6 LD/MG — — 0.3 g HL6327MG/28MG Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 7 HL6327MG/28MG Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8