UMF4N Transistors Power management (dual transistors) UMF4N 2SA2018 and DTC123EE are housed independently in a UMT package. 0.65 1.25 2.0 0.65 1.3 (3) (1) (2) (4) (5) (6) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm) 0.2 !Application Power management circuit (2) DTr2 0.9 0.7 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 !Equivalent circuits (3) 0.1Min. 0~0.1 !Structure Silicon epitaxial planar transistor 0.15 2.1 (1) Tr1 R1 R2 (4) (5) (6) R1=2.2kΩ R2=2.2kΩ !Package, marking, and packaging specifications Type UMF4N Package UMT6 Marking F4 Code TR Basic ordering unit(pieces) 3000 1/4 UMF4N Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Limits Symbol −15 VCBO VCEO −12 VEBO −6 IC −500 Collector current ICP −1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Symbol Limits VCC 50 VIN −10~+20 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg −55~+150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −100 − 260 6.5 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−200mA, IB=−10mA VCE=−2V, IC=−10mA VCE=−2V, IE=10mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 20 Typ. − − 100 − − − Max. 0.5 − 300 3.8 0.5 − Unit V V mV mA µA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=20mA fT R1 R2/R1 − 1.54 0.8 250 2.2 1.0 − 2.86 1.2 MHz kΩ − VCE=10V, IE=−5mA, f=100MHz ∗ DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio − − ∗ Characteristics of built-in transistor. 2/4 UMF4N Transistors !Electrical characteristic curves 1000 VCE=2V Pulsed 0.2 0.4 0.6 0.8 DC CURRENT GAIN : hFE 1.0 1.2 Ta=25°C Ta=−40°C 100 10 1 1.4 1 10 BASE TO EMITTER VOLTAGE : VBE (V) 10000 Ta=125°C Ta=25°C Ta=−40°C 10 1 1 10 100 1000 Ta=125°C 100 10 1 COLLECTOR CURRENT : IC (mA) 100 Cib 10 Cob 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 Fig.6 Gain bandwidth product vs. emitter current 10 TRANSITION FREQUENCY : IC (A) IE=0A f=1MHz Ta=25°C IC/IB=10 10 EMITTER CURRENT : IE (mA) vs. collector current 1000 1 1000 Fig.5 Base-emitter saturation voltage vs. collector current ( ΙΙ ) 1 0.1 100 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 IC/IB=50 IC/IB=20 1000 Ta=−40°C Ta=25°C 100 vs. collector current ( Ι ) IC/IB=20 Pulsed 1000 Ta=25°C Pulsed Fig.3 Collector-emitter saturation voltage collector current IC/IB=20 Pulsed 100 1000 Fig.2 DC current gain vs. BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 Grounded emitter propagation characteristics 1000 100 COLLECTOR CURRENT : IC (mA) 1000 TRANSITION FREQUENCY : fT (MHz) 0 Ta= −40° C 10 Ta=25° C 5°C 100 1 VCE=2V Pulsed Ta=125°C Ta=12 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Tr1 Ta=25°C Single Pulsed 1 10ms 100ms 1ms DC 0.1 0.01 0.001 0.01 0.1 1 10 100 EMITTER CURRENT : VCE (V) Fig.8 Safe operation area vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 UMF4N Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Fig.9 Input voltage vs. output current (ON characteristics) VO=5V 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 2m 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.10 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.11 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current 4/4