IMT4 NEW PRODUCT DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary NPN Type Available (IMX8) Small Surface Mount Package SOT-26 A B2 B1 E1 KX7 Mechanical Data · · · · · · C2 Case: SOT-26, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: KX7 Weight: 0.016 grams (approx.) Maximum Ratings B C E2 C1 H K M J D F L Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 F ¾ ¾ 0.55 H 2.90 3.10 3.00 0.05 J 0.013 0.10 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol IMT4 Unit Collector-Base Voltage Characteristic VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -50 mA Power Dissipation (Note 1) Pd 225 mW RqJA 555 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -120 ¾ ¾ V IC = -50mA Collector-Emitter Breakdown Voltage V(BR)CEO -120 ¾ ¾ V IC = -1.0mA Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 2) V(BR)EBO -5.0 ¾ ¾ V IE = -50mA Collector Cutoff Current ICBO ¾ ¾ -0.5 mA VCB = -100V Emitter Cutoff Current IEBO ¾ ¾ -0.5 mA VEB = -4.0V ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE 180 ¾ 820 ¾ IC = -2.0mA, VCE = -6.0V VCE(SAT) ¾ ¾ -0.5 V IC = -10mA, IB = -1.0mA fT ¾ 140 ¾ MHz VCE = -12V, IE = 2.0mA, f = 100MHz SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Ordering Information Notes: (Note 3) Device Packaging Shipping IMT4-7 SOT-26 3000/Tape & Reel 1.Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded. 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30303 Rev. A-2 1 of 2 IMT4 KX7 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM NEW PRODUCT Marking Information KX7 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N O P Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30303 Rev. A-2 2 of 2 IMT4