ETC MUN2111T1/D

MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59
package which is designed for low power surface mount applications.
•
•
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: Class 1
ESD Rating – Machine Model: Class B
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
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PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 2
BASE
(INPUT)
R2
PIN 1
EMITTER
(GROUND)
3
2
1
SC–59
CASE 318D
PLASTIC
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
230 (Note 1.)
338 (Note 2.)
1.8 (Note 1.)
2.7 (Note 2.)
mW
Rating
Collector Current
6x
6x = Device Code
x = A – T*
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
Thermal Resistance –
Junction-to-Ambient
RθJA
540 (Note 1.)
370 (Note 2.)
°C/W
*See device marking table on page 2 of this data sheet.
Thermal Resistance –
Junction-to-Lead
RθJL
264 (Note 1.)
287 (Note 2.)
°C/W
Preferred devices are recommended choices for future use
and best overall value.
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 11
Publication Order Number:
MUN2111T1/D
MUN2111T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN2111T1
SC–59
6A
10
10
3000/Tape & Reel
MUN2112T1
SC–59
6B
22
22
3000/Tape & Reel
MUN2113T1
SC–59
6C
47
47
3000/Tape & Reel
MUN2114T1
SC–59
6D
10
47
3000/Tape & Reel
MUN2115T1 (Note 3.)
SC–59
6E
10
∞
3000/Tape & Reel
MUN2116T1 (Note 3.)
SC–59
6F
4.7
∞
3000/Tape & Reel
MUN2130T1 (Note 3.)
SC–59
6G
1.0
1.0
3000/Tape & Reel
MUN2131T1 (Note 3.)
SC–59
6H
2.2
2.2
3000/Tape & Reel
MUN2132T1 (Note 3.)
SC–59
6J
4.7
4.7
3000/Tape & Reel
MUN2133T1 (Note 3.)
SC–59
6K
4.7
47
3000/Tape & Reel
MUN2134T1 (Note 3.)
SC–59
6L
22
47
3000/Tape & Reel
MUN2136T1
SC–59
6N
100
100
3000/Tape & Reel
MUN2137T1
SC–59
6P
47
22
3000/Tape & Reel
MUN2140T1 (Note 3.)
SC–59
6T
47
∞
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
–
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
–
500
nAdc
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
–
–
Vdc
Collector–Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
–
Vdc
OFF CHARACTERISTICS
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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2
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Unit
ON CHARACTERISTICS (Note 5.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5.0 mA)
(IC = 10 mA, IB = 1.0 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
VCE(sat)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2136T1
MUN2137T1
MUN2131T1
MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
Vdc
VOL
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
MUN2140T1
MUN2136T1
MUN2137T1
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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3
Vdc
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
–
–
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
kΩ
0.8
0.17
–
0.8
0.055
0.38
1.7
1.0
0.21
–
1.0
0.1
0.47
2.1
1.2
0.25
–
1.2
0.185
0.56
2.6
ON CHARACTERISTICS (Note 6.) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2130T1
MUN2115T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
Input Resistor
Resistor Ratio
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
R1/R2
6. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
PD, POWER DISSIPATION (mW)
350
300
250
200
150
RθJA= 370°C/W
100
50
0
–50
0
50
100
TA, AMBIENT TEMPERATURE (5°C)
Figure 1. Derating Curve
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4
150
MUN2111T1 Series
1000
1
VCE = 10 V
IC/IB = 10
TA = –2°5C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2111T1
25°C
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA = 75°C
100
–25°C
10
80
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
IC, COLLECTOR CURRENT (mA)
1
0
10
1
0.1
VO = 5 V
0.01
0.001
50
TA = –25°C
0
Figure 4. Output Capacitance
6
7
8
2
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
1
VO = 0.2 V
TA = –25°C
10
25°C
75°C
1
0.1
0
10
9
Figure 5. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
2
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
0
100
Figure 3. DC Current Gain
4
3
25°C
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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5
50
10
MUN2111T1 Series
1000
10
VCE = 10 V
IC/IB = 10
TA = –25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2112T1
25°C
1
75°C
0.1
0.01
TA = 75°C
100
10
0
20
40
60
IC, COLLECTOR CURRENT (mA)
1
80
10
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
lE = 0 V
TA = 25°C
3
2
1
0
25°C
75°C
10
TA = –25°C
1
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
1
Figure 9. Output Capacitance
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
25°C
10
75°C
1
0.1
0
9
Figure 10. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
10
0
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
0
25°C
–25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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6
50
10
MUN2111T1 Series
1
1000
IC/IB = 10
TA = –25°C
25°C
75°C
0.1
0.01
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2113T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA = 75°C
25°C
10
40
–25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
Figure 12. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
–25°C
0.1
0.01
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
25°C
10
75°C
1
0
9
Figure 15. Output Current vs. Input Voltage
100
0.1
25°C
1
0.001
50
TA = 75°C
Figure 14. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1
0.8
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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7
50
10
MUN2111T1 Series
180
1
IC/IB = 10
25°C
140
25°C
0.1
–25°C
120
75°C
100
0.01
80
60
40
20
0.00
0
1
20
40
60
IC, COLLECTOR CURRENT (mA)
0
80
1
4.5
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
4
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
100
4
3
2.5
2
1.5
1
0.5
0
2
Figure 18. DC Current Gain
Figure 17. VCE(sat) vs. IC
0
2
4
6
8
10 15
TA = 75°C
10
VO = 5 V
1
20 25 30 35 40 45 50
25°C
–25°C
0
2
4
6
8
10
Vin, INPUT VOLTAGE (VOLTS)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current vs. Input Voltage
+12 V
10
Vin, INPUT VOLTAGE (VOLTS)
TA = 75°C
VCE = 10 V
160
TA = –25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2114T1
TA = –25°C
25°C
Typical Application
for PNP BRTs
75°C
1
LOAD
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage vs. Output Current
Figure 22. Inexpensive, Unregulated Current Source
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8
MUN2111T1 Series
1
1000
IC/IB = 10
IC/IB =10
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2131T1
25°C
75°C
0.1
–25°C
0.01
100
25°C
75°C
10
–25°C
1
0
5
10
15
20
25
30
35
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 25. VCE(sat) vs. IC
Figure 26. DC Current Gain
12
IC, COLLECTOR CURRENT (mA)
100
10
f = 1 MHz
IE = 0 A
TA = 25°C
8
6
4
2
0
75°C
–25°C
10
1
TA = 25°C
VO = 5 V
0.01
0.01
0
5
10
15
20
25
30
35
40
45
50 55
0
1
3
2
4
5
6
7
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 27. Output Capacitance
Figure 23. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
TA = –25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
10
20
5
15
IC, COLLECTOR CURRENT (mA)
Figure 24. Input Voltage vs. Output Current
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9
25
8
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
1000
75°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
–25°C
TA = –25°C
100
25°C
10
VCE = 10 V
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
1
7
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = –25°C
1
VO = 5 V
0
1
2
3
4
TA = –25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 31. Output Current versus Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 32. Input Voltage versus Output Current
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10
20
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1
1000
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = –25°C
75°C
0.1
25°C
75°C
TA = –25°C
100
25°C
VCE = 10 V
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 33. Maximum Collector Voltage versus
Collector Current
Figure 34. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = –25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = –25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 36. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 35. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 37. Input Voltage versus Output Current
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11
MUN2111T1 Series
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.098-0.118
2.5-3.0
0.094
2.4
0.039
1.0
0.031
0.8
inches
mm
SC–59 POWER DISSIPATION
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 338 milliwatts.
The power dissipation of the SC–59 is a function of the
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows:
PD =
PD = 150°C – 25°C = 338 milliwatts
370°C/W
The 370°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 338 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, the power dissipation can be doubled
using the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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MUN2111T1 Series
SOLDER STENCIL GUIDELINES
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SC–59 package should be
the same as the pad size on the printed circuit board, i.e., a
1:1 registration.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 38 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
150°C
STEP 4
STEP 5
STEP 6 STEP 7
HEATING
HEATING
VENT COOLING
ZONES 3 & 6 ZONES 4 & 7
205° TO 219°C
SOAK"
SPIKE"
PEAK AT
170°C
SOLDER JOINT
160°C
150°C
140°C
100°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TMAX
TIME (3 TO 7 MINUTES TOTAL)
Figure 38. Typical Solder Heating Profile
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MUN2111T1 Series
PACKAGE DIMENSIONS
SC–59
CASE 318D–04
ISSUE F
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
L
3
S
2
DIM
A
B
C
D
G
H
J
K
L
S
B
1
D
G
J
C
H
MILLIMETERS
MIN
MAX
2.70
3.10
1.30
1.70
1.00
1.30
0.35
0.50
1.70
2.10
0.013
0.100
0.09
0.18
0.20
0.60
1.25
1.65
2.50
3.00
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
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14
INCHES
MIN
MAX
0.1063 0.1220
0.0512 0.0669
0.0394 0.0511
0.0138 0.0196
0.0670 0.0826
0.0005 0.0040
0.0034 0.0070
0.0079 0.0236
0.0493 0.0649
0.0985 0.1181
MUN2111T1 Series
Notes
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MUN2111T1 Series
Thermal Clad is a registered trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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MUN2111T1/D