NCS5002 Product Preview RF Power Detector NCS5002 is a full CMOS detector designed for GSM/DCS/ GPRS/EDGE Power Amplifier Control, and RF measurement applications. This device converts the RF power applied into a DC level. The polynomial detector characteristics provide good accuracy at low power level while featuring a wide dynamic range. The detector output is temperature- compensated and allows good accuracy. http://onsemi.com MARKING DIAGRAM Features • • • • • • • 6 Power Range: -30 dBm to 20 dBm Includes Input Matching Circuit Internal Temperature Compensation Wide Input Frequency Range: 100 MHz to 3.0 GHz Direct Connection to Battery: 2.7 to 4.8 V Reference Signal Output TSOP-6 Package or Bare Die TSOP-6 CASE 318G xxx = Specific Device Code M = Date Code Typical Applications • • • • xxxM 1 PIN CONNECTIONS Global System for Mobile Communication (GSM/DCS/PCS) Dual/Triple Band TDMA/EDGE and GPRS Personal Communication Network (PCN) Power Amplifier Modules DET 1 6 REF VCC 2 5 GND EN 3 4 RF_IN (Top View) VCC ORDERING INFORMATION VCC RF ENABLE RF_IN DET DETECTED VOLTAGE EN REF REFERENCE VOLTAGE Device TBD Package Shipping TSOP-6 TBD GND Figure 1. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2003 February, 2003 - Rev. 0 1 Publication Order Number: NCS5002/D NCS5002 PAD DESCRIPTION Pad TSOP-6 Symbol 1 DET Detector Output: This signal increases as a function of the RF input level. In absence of RF it is equal to the Reference level plus a systematic offset voltage. 2 VCC Power Supply Voltage: VCC should be bypassed with 1.0 nF ceramic capacitor. 3 EN Enable Logical Pull-Down Input: A zero on this logic input pin keeps all sections in low power mode. An internal 1.0 M pull-down resistor keeps the level low when driver is in high impedance condition. 4 RF_IN Description RF Signal Input: The RF input nominal impedance is 50 and is AC-coupled to the detector. The frequency signal may vary from 100 MHz to 3.0 GHz. C IN 50 5 GND Ground Pin to be connected to the RF and digital ground. 6 REF Detector Reference Level: This output DC signal defines a reference voltage, thereby when V_DET = V_REF, a particular level could be detected. MAXIMUM RATINGS Rating Symbol Value Unit PMAX 25 dBm VCCMAX 5.5 V Tstg -65 to +150 °C Maximum Input DC Voltage on Pins VIMAX VCC + 0.3 V V Minimum Input DC Voltage on Pins VIMIN - 0.3 V - Rating for RF IN Pin All Other Pins TBD 1.5 kV - 200 V Maximum Input Power on RF Pins (50 Ω Equivalent) Maximum Power Supply Storage Temperature ESD Tolerance Human Body Model RF IN Pin All other pins Machine Model All pins RECOMMENDED OPERATING CONDITIONS Unless otherwise mentioned, following characteristics are given for all range operating temperature (-40 to +85°C) power supply (2.7 to 4.8 V) and frequency (0.1 to 3.0 GHz). Characteristic Operating Power Supply Symbol Pin Min Typ Max Unit VCC 1 2.7 - 4.8 V Active Mode Current Consumption Icc 1 - 1.5 - mA Power Down Current Consumption Ipdn 1 - 0.1 1.0 A Operating Temperature Range TA - -40 - +85 °C http://onsemi.com 2 NCS5002 ELECTRICAL CHARACTERISTICS Unless otherwise mentioned, following characteristics are given for all range operating temperature (-40 to +85°C) power supply (2.7 to 4.8 V) and frequency (0.1 to 3.0 GHz). Characteristic Symbol Pin Min Typ Max Unit Detection Range DR 2 -30 - +20 dBm Detection Sensitivity: Sensitivity 10 mV Sensitivity 1.0 mV DS 2 - -20 -30 - Input Impedance on RF Pin Voltage Standing Wave Ratio (See Layout Advice) Operating Frequency Range Harmonic Return by RF_IN up to 20 dBm H2 H3 dBm R_IN 4 - 50 - VSWR 4 - - 2:1 - F_IN 0.1 0.2 - 3.0 GHz TBD TBD TBM TBD TBM - - - 1.0 - MHz H_Return dBc DET Bandwidth BW 2 Detector Output No RF DET 2 85 115 145 mV Detector Output Reference Voltage REF 3 135 150 165 mV REF-DET 2/3 TBD 36 TBD mV I_OUT 2 - 50 - A I_IN 2 - 50 - A PSRR 2 20 20 - - Detector Output Offset DET-REF No RF Apply Output Current Source Capability Output Current Sink Capability Ripple Rejection, (Ripple 0.2 Vp-p) @ 25°C F = 1.0 kHz F = 10 kHz dB Logic Voltage Low Threshold VIL 6 - - 0.3 V Logic Voltage High Threshold VIH 6 1.5 - - V Logic Input Current I_IN 6 - 2.5 10 A Pull-Down on Enable Logic Input Keeps Level Low in Three–State Condition PDE 6 0.8 1.0 1.5 M W_UP 6 - - 20 s Wake Up Time on Enable http://onsemi.com 3 NCS5002 TYPICAL PERFORMANCE CHARACTERISTICS 10,000 10,000 1,000 1 GHz 1,000 1 GHz +85°C (mV) (mV) 200 MHz 100 100 1 GHz 25°C 2 GHz 10 10 3 GHz 1 -30 -20 -10 1 GHz -40°C 0 10 1 -30 20 -20 -10 POWER (dBm) 0 10 20 POWER (dBm) Figure 2. Sensitivity vs. RF Power at 25C Figure 3. DET-REF (mV) - DET No RF at 25C 5 4,5 4 ICC (mA) 3,5 TBD 3 2,5 2 1,5 1 0,5 0 -30 -20 -10 0 10 20 POWER (dBm) Figure 4. Drift vs. Curve at 25C/1.0 GHz Figure 5. Current Consumption vs. RF Power 10 2,0 0 1,9 1,8 -10 VSWR GAIN (dB) 1,7 -20 -30 1,6 1,5 1,4 -40 1,3 -50 1,2 -60 1,1 -70 1,0 1.0k 10k 100k 1.0M 10M 100M 100M 1.0G FREQUENCY (Hz) FREQUENCY (Hz) Figure 6. Demodulation Bandwidth Figure 7. VSWR http://onsemi.com 4 10G NCS5002 TYPICAL PERFORMANCE CHARACTERISTICS 2000 100 1800 80 1600 DET-REF (mV) 1400 (mV) 1 GHz 25°C 60 +15 dBm 0 dBm 1200 1 GHz +85°C 1000 800 600 40 20 1 GHz -40°C 0 -20 -40 400 -60 -15 dBm 200 0 100 -80 1000 10000 -100 -30 -25 FREQUENCY (MHz) -20 Figure 9. Cross Point vs. T (When REF = DET) 14 30 Over 329 Samples Over 329 Samples 12 NUMBER OF SAMPLES 25 20 15 10 5 10 8 6 4 0 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 155 160 165 2 100 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 185 190 195 200 VDET NO RF (mV) VREF (mV) Figure 10. REF DC Offset Distribution Figure 11. DET DC Offset Distribution Without RF Apply 14 Over 329 Samples 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 NUMBER OF SAMPLES NUMBER OF SAMPLES -10 POWER (dBm) Figure 8. Detection vs. Frequency 0 -15 VREF - DET NO RF (mV) Figure 12. REF-DET Offset Distribution Without RF Apply http://onsemi.com 5 NCS5002 PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE H A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B D G M J C 0.05 (0.002) H K DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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