ETC ON1112

Transmissive Photosensors (Photo Interrupters)
CNZ1111, CNZ1112 (ON1111, ON1112)
Photo Interrupters
Unit : mm
CNZ1111
0.45±0.1
For contactless SW, object detection
Mark for indicating
LED side
6.0 min.
Wide gap between emitting and detecting elements, suitable for
thick plate detection
2-0.45±0.2
(2.54)
(10.0)
SEC. A-A'
3
2-ø3.2±0.2
19.0±0.2
2
6.2±0.2
Highly precise position detection : 0.3 mm
0.45±0.1
Device
center
A'
Features
2.0±0.2
2.2±0.2
25.0±0.35
13.0±0.3
5.0±0.2
A
10.0±0.2
2.5±0.2
Overview
CNZ1111 and CNZ1112 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
2
1
3
4
1
Fast response : tr, tf = 6 µs (typ.)
4
Pin connection
(Note) (
) Dimension is reference
Small output current variation against change in temperature
V
50
mA
PD*1
75
mW
IC
20
mA
Output (Photo Collector to emitter voltage VCEO
transistor)
Emitter to collector voltage VECO
30
V
5
V
Collector power dissipation
PC*2
100
mW
Operating ambient temperature
Topr –25 to +85
˚C
Storage temperature
Tstg –30 to +100
˚C
Temperature
Mark for indicating
LED side
13.0±0.3
5.0±0.2
A
2.0±0.2
2.2±0.2
3
IF
10.0±0.2
2.5±0.2
VR
Collector current
0.45±0.1
Unit
0.45±0.1
Device
center
A'
(10.0)
6.0 min.
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Symbol Ratings
2
6.2±0.2
Parameter
Unit : mm
CNZ1112
Absolute Maximum Ratings (Ta = 25˚C)
1
Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C.
*1
2-0.45±0.2
(2.54)
SEC. A-A'
3
4
2
3
1
4
Pin connection
(Note) (
) Dimension is reference
Note) The part numbers in the parenthesis show conventional part number.
1
Transmissive Photosensors (Photo Interrupters)
CNZ1111,CNZ1112
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Collector cutoff current
Output
characteristics Collector to emitter capacitance
Conditions
VF
IF = 50mA
IR
VR = 3V
ICEO
min
max
1.2
1.5
V
10
µA
200
nA
VCE = 10V
CC
VCE = 10V, f = 1MHz
5
Collector current
IC VCE = 10V, IF = 20mA
Transfer
Response time
tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*
typ
Unit
pF
0.3
mA
µs
6
0.3
V
Switching time measurement circuit
Sig.IN
VCC
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
(Input pulse)
Sig.OUT (Output pulse)
RL
td
;;
;;
50Ω
90%
10%
tr
tf
IF , IC — Ta
IF — V F
10
VCE = 10V
Ta = 25˚C
Ta = 25˚C
IF
30
IC
20
10
40
Collector current
40
IC (mA)
50
IF (mA)
50
0
– 25
30
20
1
10 –1
10 –2
10
0
20
40
60
80
Ambient temperature Ta (˚C )
2
IC — I F
60
Forward current
Forward current, collector current
IF , IC (mA)
60
100
0
0
0.4
0.8
1.2
1.6
2.0
Forward voltage VF (V)
2.4
10 –3
10 –1
1
10
Forward current IF (mA)
10 2
CNZ1111,CNZ1112
Transmissive Photosensors (Photo Interrupters)
VF — Ta
IC — VCE
IC — Ta
10 2
1.6
160
VCE = 10V
IF = 20mA
0.8
0.4
20
40
60
80
IC (%)
20mA
1
10mA
10 –1
10 –2
10 –1
100
Ambient temperature Ta (˚C )
1
Collector to emitter voltage VCE (V)
ICEO — Ta
tr (µs)
RL = 1kΩ
500Ω
Rise time
10 –2
10
100Ω
1
Sig.IN
VCC
V1
50Ω
Sig. V1
OUT
V2 V2
RL
10 –3
0
20
40
60
80
Ambient temperature Ta (˚C )
100
;
;
ICEO (µA)
Dark current
10V
10 –1
10 –2
10 –1
40
60
80
100
100
VCC = 10V
Ta = 25˚C
10 2
10 –4
– 40 – 20
20
IC — d
1
10 –1
0
Ambient temperature Ta (˚C )
tr — IC
10 3
10
VCE = 24V
40
0
– 40 – 20
10 2
10
80
tr
td
90%
10%
VCE = 10V
Ta = 25˚C
IF = 20mA
IC (%)
0
IF = 30mA
120
80
Relative output current
0
– 40 – 20
10
Relative output current
10mA
IC (mA)
IF = 50mA
1.2
Collector current
Forward voltage
VF (V)
Ta = 25˚C
60
Criterion
0
d
40
20
tf
1
Collector current IC (mA)
10
0
0
1
2
3
4
5
6
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
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or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
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Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
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2001 MAR