PF08123B MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone ADE-208-1401G (Z) Rev.7 Jul. 2002 Application • Triple band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz). • For 3.5 V & GPRS Class12 operation compatible Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ • High efficiency : 55% Typ at 35.0 dBm for E-GSM 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900 • Lower consume current at low power 100 mA Typ at 7 dBm for E-GSM 60 mA Typ at 5 dBm for DCS1800/1900 Pin Arrangement • RF-K-8A 5 G6 8 7 G 12 G 4 G 3 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND PF08123B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Remark Supply voltage Vdd 7.0 V at no-operation 5.0 V at operation (50 Ω load) Idd GSM 3.5 A Idd DCS 2 A Vctl voltage Vctl 4 V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −25 to +90 °C Storage temperature Tstg −30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Supply current Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800/1900 band (1710 to 1785 MHz, 1850 to 1910 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids 20 µA Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V Vapc control current Iapc 2.0 mA Vapc = 2.2 V Vctl control current Ictl 2 µA Vctl = 3 V Rev.7, Jul. 2002, page 2 of 14 PF08123B Electrical Characteristics for GSM900 band (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 880 915 MHz Band select (GSM active) Vctl 2.0 2.8 V Input power Pin –2 0 2 dBm Control voltage range Vapc 0.2 2.2 V Supply voltage Vdd 3.0 3.5 4.5 V Total efficiency ηT 47 55 % 2nd harmonic distortion 2nd H.D. −45 −35 dBc 3rd harmonic distortion 3rd H.D. −45 −35 dBc 4th~8th harmonic distortion 4th~8th H.D. −35 dBc Input VSWR VSWR (in) 1.5 3 Output power (1) Pout (1) 35.0 36.0 dBm Vapc = 2.2 V Output power (2) Pout (2) 33.5 34.5 dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Idd at Low power 100 300 mA Pout GSM = 7 dBm Isolation −50 −37 dBm Vapc = 0.2 V Isolation at DCS RF-output when GSM is active −25 −18 dBm Pout GSM = 35 dBm, Measured at f = 1760 to 1830 MHz Switching time t r, t f 1 2 µs Pout GSM = 5 to 35 dBm Stability No parasitic oscillation Vdd = 3.1 to 4.5 V, Pout ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, Tc = 25°C, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd = 3.1 to 4.5 V, Pout GSM ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases Load VSWR tolerance at GPRS CLASS 12 operation No degradation Vdd = 3.1 to 4.2 V, Pout GSM ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phases Slope Pout/Vapc 160 200 dB/V Pout GSM = 5 to 35 dBm AM output 15 30 % Pout GSM = 5 to 35 dBm, 4% AM modulation at input 50 kHz modulation frequency Pout GSM = 35 dBm, Vapc = controlled Rev.7, Jul. 2002, page 3 of 14 PF08123B Electrical Characteristics for DCS1800 band (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0.2 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 1710 1785 MHz Band select (DCS active) Vctl 0 0.2 V Input power Pin –2 0 2 dBm Control voltage range Vapc 0.2 2.2 V Supply voltage Vdd 3.0 3.5 4.5 V Total efficiency ηT 40 47 % 2nd harmonic distortion 2nd H.D. −45 −35 dBc 3rd harmonic distortion 3rd H.D. −45 −35 dBc 4th~8th harmonic distortion 4th~8th H.D. –35 dBc Input VSWR VSWR (in) 1.5 3 Output power (1) Pout (1) 32.5 33.5 dBm Vapc = 2.2 V Output power (2) Pout (2) 31.0 32.0 DB m Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Idd at Low power 60 150 mA Pout DCS = 5 dBm Isolation −47 −37 dBm Vapc = 0.2 V Switching time t r, t f 1 2 µs Pout DCS = 0 to 32.5 dBm Stability No parasitic oscillation Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm, Vapc ≤ 2.2 V, Rg = 50 Ω, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm, Vapc ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Output VSWR = 10 : 1 All phases Load VSWR tolerance at GPRS CLASS 12 operation No degradation Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.5 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phases Slope Pout/Vapc 160 200 dB/V Pout DCS = 0 to 32.5 dBm AM output 15 30 % Pout DCS = 0 to 32.5 dBm, 4% AM modulation at input 50 kHz modulation frequency Rev.7, Jul. 2002, page 4 of 14 Test Condition Pout DCS = 32.5 dBm, Vapc = controlled PF08123B Electrical Characteristics for DCS1900 band (Tc = 25°C) Test conditions unless otherwise noted: f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0.2 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 1850 1910 MHz Band select (DCS active) Vctl 0 0.2 V Input power Pin –2 0 2 dBm Control voltage range Vapc 0.2 2.2 V Supply voltage Vdd 3.0 3.5 4.5 V Total efficiency ηT 40 47 % 2nd harmonic distortion 2nd H.D. −45 −35 dBc 3rd harmonic distortion 3rd H.D. −45 −35 dBc 4th~8th harmonic distortion 4th~8th H.D. –35 dBc Input VSWR VSWR (in) 1.5 3 Output power (1) Pout (1) 32.0 33.0 dBm Vapc = 2.2 V Output power (2) Pout (2) 30.5 31.5 dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Idd at Low power 60 150 mA Pout DCS = 5 dBm Isolation −47 −37 dBm Vapc = 0.2 V Switching time t r, t f 1 2 µs Pout DCS = 0 to 32.0 dBm Stability No parasitic oscillation Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm, Vapc ≤ 2.2 V, Rg = 50 Ω, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm, Vapc ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Output VSWR = 10 : 1 All phases Load VSWR tolerance at GPRS CLASS 12 operation No degradation Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.0 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phases Slope Pout/Vapc 160 200 dB/V Pout DCS = 0 to 32.0 dBm AM output 15 30 % Pout DCS = 0 to 32.0 dBm, 4% AM modulation at input 50 kHz modulation frequency Pout DCS = 32.0 dBm, Vapc = controlled Rev.7, Jul. 2002, page 5 of 14 PF08123B Circuit Diagram PIN7 Vctl PIN6 Vdd2 PIN8 Pin DCS PIN5 Pout DCS PIN1 Pin GSM PIN4 Pout GSM Bias circuit PIN2 Vapc PIN3 Vdd1 Internal Diagram and External Circuit Z1 PIN8 Pin DCS PIN5 Pout DCS PIN1 Pin GSM PIN4 Pout GSM Z2 Z3 Z4 Bias circuit Pin2 Vapc Pin7 Vctl Pin3 Vdd1 Pin Pin DCS GSM Vapc C2 C5 C1 C4 C3 FB Pin6 Vdd2 FB Vctl FB Vdd1 C6 FB Vdd2 C1 to C4 = 1000 pF CERAMIC CHIP C5 = C6 = 4.7 mF TANTALUM ELECTROLYTE FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = Z4 = 50 Ω MICRO STRIP LINE Rev.7, Jul. 2002, page 6 of 14 Pout Pout GSM DCS PF08123B Characteristic Curves GSM mode (915 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 GSM mode (880 MHz) Eff vs. Pout 50 40 30 Pout 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 Eff (%) 20 Pin = 0 dBm 50 Vdd = 3.5 V 40 Vapc = control Tc = 25°C 30 20 10 10 0 0 0 5 10 15 20 25 Pout (dBm) 30 35 0 40 GSM mode (880 MHz) Pout, Eff vs. Pin 57.5 55 52.5 Eff 34.5 50 Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 34.0 –10 –8 –6 –4 –2 0 2 4 Pin (dBm) 47.5 6 45 8 10 Vdd = 3.5 V 36.5 Tc = 25°C Pout (dBm) 36.5 35.0 15 20 25 Pout (dBm) 30 37.0 Eff (%) 60 Pout 10 35 40 GSM mode (915 MHz) Pout, Eff vs. Pin 37.0 36.0 Vdd = 3.5 V Tc = 25°C 35.5 5 60 Eff 57.5 36.0 35.5 55 Pout 52.5 35.0 34.5 50 Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 34.0 –10 –8 –6 –4 –2 0 2 4 Pin (dBm) Eff (%) Eff (%) Eff GSM mode (915 MHz) Eff vs. Pout 60 Pout (dBm) 60 Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C Eff (%) Pout (dBm) GSM mode (880 MHz) Pout, Eff vs. Vapc 40 60 30 Pin = 0 dBm 20 Vdd = 3.5 V 50 Eff 10 Vapc = control 0 40 –10 Tc = 25°C –20 30 –30 Pout –40 20 –50 –60 10 –70 0 –80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) Eff (%) Pout (dBm) GSM mode (880 MHz to 915 MHz) 47.5 6 45 8 10 Rev.7, Jul. 2002, page 7 of 14 PF08123B GSM mode (880 MHz to 915 MHz) (cont) GSM mode (915 MHz) Idd vs. Pout GSM mode (880 MHz) Idd vs. Pout 10 10 Idd [A] Idd (A) Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 20 30 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 40 37 55 38.0 36 50 Eff Pout (dBm) 35 45 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 34 40 Pout (dBm) 39.0 Eff (%) 60 Pout 33 35 800 820 840 860 880 900 920 940 960 Freq (MHz) 40 880 MHz 37.0 915 MHz 36.0 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 35.0 34.0 3 3.2 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4 GSM mode (880 MHz) Pout vs. Pin (Temperature variation) 37.0 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C GSM mode (915 MHz) Pout vs. Pin (Temperature variation) 37.0 Vapc = 2.2 V 36.0 36.0 Vdd = 3.5 V, Tc = 25°C 35.0 Vdd = 3.5 V, Tc = 85°C 34.0 Vdd = 3.1 V, Tc = 85°C Vdd = 3.5 V, Tc = 85°C 35.0 Pout (dBm) Pout (dBm) 30 GSM mode Pout vs. Vdd GSM mode Pout, Eff vs. Freq 38 20 Vdd = 3.1 V, Tc = 85°C 34.0 33.0 –8 –6 –4 –2 0 2 Pin (dBm) Rev.7, Jul. 2002, page 8 of 14 4 6 8 33.0 –8 –6 –4 –2 0 2 Pin (dBm) 4 6 8 PF08123B DCS mode (1710 MHz to 1785 MHz) Pout 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) 40 30 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C Pout 40 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) DCS mode (1785 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C Eff (%) 30 20 10 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 Pout (dBm) 25 30 0 35 0 DCS mode (1710 MHz) Pout, Eff vs. Pin Eff 33.5 33.0 32.5 32.0 –8 –6 –4 34.5 55 34.0 50 45 Vdd = 3.5 V Tc = 25°C 40 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 35 –2 0 2 4 6 8 Pin (dBm) Pout (dBm) Pout 34.0 10 15 20 Pout (dBm) 25 30 35 DCS mode (1785 MHz) Pout, Eff vs. Pin 60 Eff (%) 34.5 5 60 Eff 33.5 33.0 32.5 32.0 –8 55 Pout –6 –4 50 45 Vdd = 3.5 V Tc = 25°C 40 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 35 –2 0 2 4 6 8 Pin (dBm) Eff (%) Eff (%) 50 Eff 30 DCS mode (1710 MHz) Eff vs. Pout 60 Pout (dBm) 60 Eff (%) 50 Eff Pout (dBm) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C DCS mode (1785 MHz) Pout, Eff vs. Vapc 60 Eff (%) Pout (dBm) DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 Rev.7, Jul. 2002, page 9 of 14 PF08123B DCS mode (1710 MHz to 1785 MHz) (cont) DCS mode (1710 MHz) Idd vs. Pout DCS mode (1785 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C Idd (A) Idd (A) 10 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 20 30 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 40 DCS, PCS mode Pout, Eff vs. Freq Pout 55 33 50 Eff 32 31 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 45 40 Pout (dBm) Pout (dBm) Vdd = 3.1 V, Tc = 85°C 32.0 1710 MHz 33.0 1785 MHz 3.2 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4 DCS mode (1785 MHz) Pout vs. Pin (Temperature variation) 35.0 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C 34.0 33.0 Vdd = 3.5 V, Tc = 85°C 32.0 Vdd = 3.1 V, Tc = 85°C 31.0 31.0 30.0 –8 34.0 3 DCS mode (1710 MHz) Pout vs. Pin (Temperature variation) 35.0 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C 34.0 Vdd = 3.5 V, Tc = 85°C Pin = 0 dBm Vapc = 2.2 V 35.0 Tc = 25°C 32.0 30 35 1700 1750 1800 1850 1900 1950 2000 Freq (MHz) 33.0 40 DCS mode Pout vs. Vdd Pout (dBm) 34 30 36.0 60 Eff (%) Pout (dBm) 35 20 –6 –4 –2 0 2 Pin (dBm) Rev.7, Jul. 2002, page 10 of 14 4 6 8 30.0 –8 –6 –4 –2 0 2 Pin (dBm) 4 6 8 PF08123B PCS mode (1850 MHz to 1910 MHz) PCS mode (1910 MHz) Pout, Eff vs. Vapc Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C Eff 50 40 Pout 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) 40 30 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 40 Pout 20 10 0.2 0.4 0.6 0.8 PCS mode (1850 MHz) Eff vs. Pout 1 1.2 1.4 1.6 1.8 Vapc (V) 2 0 2.2 PCS mode (1910 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C Eff (%) 30 20 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 10 0 0 0 5 10 15 20 Pout (dBm) 25 30 0 35 PCS mode (1850 MHz) Pout, Eff vs. Pin 55 Pout 33.5 33.0 32.5 32.0 –8 –6 –4 Eff 15 20 Pout (dBm) 25 30 35 50 45 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V 40 Eff:Pout = 32 dBm 35 –2 0 2 4 6 8 Pin (dBm) 60 34.5 Eff (%) 34.0 10 PCS mode (1910 MHz) Pout, Eff vs. Pin 60 Pout (dBm) 34.5 5 Vdd = 3.5 V 34.0 Tc = 25°C Pout:Vapc = 2.2 V 33.5 Eff:Pout = 32 dBm 33.0 Eff 55 50 45 Pout 40 32.5 32.0 –8 Eff (%) Eff (%) 50 Eff 30 0 60 Pout (dBm) 60 Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C Eff (%) 60 Eff (%) Pout (dBm) Pout (dBm) PCS mode (1850 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 35 –6 –4 –2 0 2 Pin (dBm) 4 6 8 Rev.7, Jul. 2002, page 11 of 14 PF08123B PCS mode (1850 MHz to 1910 MHz) (cont) PCS mode (1850 MHz) Idd vs. Pout PCS mode (1910 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C Idd (A) Idd (A) 10 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 20 30 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 40 55 50 33 Eff 32 31 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 32 dBm 45 40 Pout (dBm) Pout PCS mode (1850 MHz) Pout vs. Pin (Temperature variation) 34.0 Vdd = 3.5 V, Tc = 25°C Vapc = 2.2 V 33.0 Vdd = 3.5 V, Tc = 85°C 32.0 Vdd = 3.1 V, Tc = 85°C 31.0 Pin = 0 dBm 35.0 Vapc = 2.2 V Tc = 25°C 34.0 1850 MHz 1910 MHz 33.0 32.0 31.0 3 Pout (dBm) Pout (dBm) 30 35 1700 1750 1800 1850 1900 1950 2000 Freq (MHz) 3.2 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4 PCS mode (1910 MHz) Pout vs. Pin (Temperature variation) 34.0 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C 33.0 32.0 Vdd = 3.5 V, Tc = 85°C 31.0 Vdd = 3.1 V, Tc = 85°C 30.0 30.0 29.0 –8 40 36.0 60 Eff (%) Pout (dBm) 34 30 PCS mode Pout vs. Vdd DCS, PCS mode Pout, Eff vs. Freq 35 20 –6 –4 –2 0 2 Pin (dBm) Rev.7, Jul. 2002, page 12 of 14 4 6 8 29.0 –8 –6 –4 –2 0 2 Pin (dBm) 4 6 8 PF08123B Package Dimensions Unit: mm 1.6 ± 0.2 7 G 6 5 G 8.0 ± 0.3 8.0 ± 0.3 8 G 1 2 G 3 (Upper side) 4 5 G6 8 7 G 13.75 ± 0.3 (5.375) (5.375) (3.275) (3.275) (1.1) (0.3) (1.6) (1.6) (1.6) (1.6) (3.7) (3.7) (2.4) (3.7) (Bottom side) (2.2) (3.7) (0.7) (1.5) (1.5) (1.3) (1.4) (2.4) (0.3) (1.1) (3.7) 12 G 4 G 3 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC JEITA Mass (reference value) RF-K-8A Rev.7, Jul. 2002, page 13 of 14 PF08123B Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.7, Jul. 2002, page 14 of 14