STPS10L40CT/CG/CF/CFP ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) 2x5 A VRRM 40 V Tj (max) 150°C VF (max) 0.46 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB and D2PAK, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. A1 K A2 K ■ A2 ■ ■ K A1 A2 A1 D2PAK STPS10L40CG TO-220FPAB STPS10L40CFP ■ A2 A2 A1 K A1 K ISOWATT220AB STPS10L40CF TO-220AB STPS10L40CT ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current Value 40 Unit V 20 A TO-220AB D2PAK Tc =135°C δ = 0.5 Per diode Per device 5 10 A ISOWATT220AB TO-220FPAB Tc =115°C δ = 0.5 Per diode Per device 5 10 A 150 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current tp=2 µs square F=1kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs 2 A PARM Repetitive peak avalanche power tp = 1µs 2700 W - 65 to + 150 °C 150 °C 10000 V/µs Tstg Tj dV/dt * : Storage temperature range square Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 5B 1/7 STPS10L40CT/CG/CF/CFP THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case TO-220AB D2PAK Value Unit Per diode Total 3 1.7 °C/W Coupling 0.35 Per diode Total 5 3.8 Coupling 2.5 Rth (c) Rth (j-c) Junction to case ISOWATT220AB TO-220FPAB Rth (c) °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter IR * Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 5 A Tj = 125°C IF = 5 A Tj = 25°C IF = 10 A Tj = 125°C IF = 10 A VF * Tests Conditions Min. Typ. Max. Unit 0.2 mA 25 mA 0.53 V VR = VRRM 8 Tj = 100°C 0.36 0.46 0.67 0.49 0.59 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.33 x IF(AV) + 0.026 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). PF(av)(W) IF(av)(A) 3.5 3.0 δ = 0.1 δ = 0.2 6 δ = 0.5 Rth(j-a)=Rth(j-c) δ = 0.05 5 2.5 4 δ=1 2.0 Rth(j-a)=15°C/W 3 1.5 0.5 2 T 1.0 1 IF(av) (A) δ=tp/T δ=tp/T tp 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 2/7 T 0 0 Tamb(°C) tp 25 50 75 100 125 150 STPS10L40CT/CG/CF/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D2PAK). IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 0 1000 125 150 70 60 50 Tc=25°C Tc=25°C 40 Tc=75°C Tc=75°C 30 Tc=125°C t 1E-2 1E-1 1E+0 t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) 0.8 0.8 δ = 0.5 0.6 δ = 0.2 0.4 δ = 0.1 T 0.2 Single pulse δ=tp/T tp(s) 1E-2 Tc=125°C IM 10 t(s) δ=0.5 20 1.0 0.0 1E-3 100 IM(A) Zth(j-c)/Rth(j-c) 0.2 75 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB). 1.0 0.4 50 80 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AB and D2PAK). 0.6 25 1E-1 δ = 0.5 δ = 0.2 tp 1E+0 T δ = 0.1 Single pulse 0.0 1E-3 1E-2 tp(s) 1E-1 δ=tp/T 1E+0 tp 1E+1 3/7 STPS10L40CT/CG/CF Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 1E+2 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) IR(mA) 1000 Tj=150°C F=1MHz Tj=25°C 1E+1 Tj=100°C 1E+0 100 1E-1 Tj=25°C 1E-2 VR(V) 1E-3 0 5 10 15 20 VR(V) 25 30 35 40 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). 100.0 10 1 2 5 10 20 50 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)( D2PAK). Rth(j-a) (°C/W) IFM(A) 80 Tj=150°C Typical values 70 60 10.0 50 40 Tj=125°C 30 1.0 Tj=25°C 20 10 VFM(V) 0.1 0.0 4/6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 S(Cu) (cm²) 0 4 8 12 16 20 24 28 32 36 40 STPS10L40CT/CG/CF/CFP PACKAGE MECHANICAL DATA TO-220AB REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 PACKAGE MECHANICAL DATA TO-220FPAB REF. A B H Dia L6 L2 L7 L3 F2 D F1 L4 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.193 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.70 0.016 0.027 0.60 1 0.024 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.204 2.40 2.70 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.204 9.8 10.7 0.385 0.421 15.8 16.4 0.621 0.645 9.00 9.90 0.354 0.389 2.9 3.50 0.114 0.18 5/7 STPS10L40CT/CG/CF/CFP PACKAGE MECHANICAL DATA D2PAK REF. A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 6/7 A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0° 8° 0° 8° STPS10L40CT/CG/CF/CFP PACKAGE MECHANICAL DATA ISOWATT220AB REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam ■ ■ ■ ■ DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.50 2.70 0.098 0.106 2.50 2.75 0.098 0.108 0.40 0.70 0.016 0.028 0.75 1.00 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 typ. 0.630 typ. 28.60 30.60 1.125 1.205 9.80 10.60 0.386 0.417 15.90 16.40 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 Ordering type Marking Package Weight Base qty STPS10L40CT STPS10L40CFP STPS10L40CG STPS10L40CG-TR STPS10L40CF STPS10L40CT STPS10L40CFP STPS10L40CG STPS10L40CG STPS10L40CF TO-220AB TO-200FPAB D2PAK D2PAK ISOWATT220AB 2.23g 2g 1.48g 1.48g 2.08g 50 50 50 1000 50 Delivery mode Tube Tube Tube Tape & reel Tube Cooling method : by conduction (C) Recommended torque value : 0.55 N.m. Maximum torque value : 0.70 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7