STPS8L30B ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 30 V Tj (max) 150 °C VF (max) 0.40 V K A FEATURES AND BENEFITS n n n LOW COST DEVICE WITH LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH LEADS TO THE HIGHEST YIELD IN THE APPLICATIONS AVALANCHE CAPABILITY SPECIFIED NC DPAK DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in DPAK, this device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS or DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 7 A IF(AV) Average forward current Tc = 135°C δ = 0.5 8 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A IRSM Non repetitive peak reverse current tp = 100µs 2 A PARM Repetitive peak avalanche power tp = 1µs Tstg Tj dV/dt * : Storage temperature range square Tj = 25°C W - 65 to + 150 °C 150 °C 10000 V/µs Maximum junction temperature Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 2A 1/4 STPS8L30B THERMAL RESISTANCES Symbol Rth(j-c) Parameter Value Unit 2.5 °C/W Junction to case STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions Tests Conditions IR * Reverse leakage current Tj = 25°C VF * Forward voltage drop Tj = 25°C Min. Typ. Max. Unit 1 mA VR = VRRM Tj = 100°C 15 IF = 8 A 40 0.49 Tj = 125°C 0.35 Tj = 25°C IF = 16 A V 0.4 0.63 Tj = 125°C 0.48 0.57 * tp = 380 µs, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.23 x IF(AV) + 0.021 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) 5.0 IF(av)(A) δ = 0.1 δ = 0.2 9 δ = 0.5 δ = 0.05 4.0 Rth(j-a)=Rth(j-c) 8 7 6 3.0 5 δ=1 Rth(j-a)=70°C/W 4 2.0 3 T IF(av) (A) 0.0 0 2 4 6 δ=tp/T 8 T 2 1.0 1 tp 0 10 Fig. 3: Normalized avalanche power derating versus pulse duration. δ=tp/T 0 25 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 Tamb(°C) tp 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/4 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS8L30B Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 120 1.0 100 0.8 80 Tc=25°C 0.6 Tc=75°C 0.4 Tc=125°C 0.2 δ = 0.5 60 40 δ = 0.2 IM 20 t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 0.0 1E-4 tp(s) Single pulse 1E-3 δ=tp/T 1E-2 1E-1 tp 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 3E+2 1E+2 2000 Tj=150°C F=1MHz Tj=25°C 1000 Tj=125°C 1E+1 1E+0 500 1E-1 Tj=25°C 200 1E-2 VR(V) 1E-3 T δ = 0.1 0 5 10 15 VR(V) 20 25 30 100 1 10 40 Fig. 9: Forward voltage drop versus forward current (maximum values). IFM(A) 100.0 10.0 Typical values Tj=150°C Tj=125°C 1.0 Tj=25°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 STPS8L30B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 n Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0° 8° Ordering type Marking Package Weight Base qty Delivery mode STPS8L30B ST LS30 DPAK 0.30g 75 Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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