ETC STPS80L15C

STPS80L15CY
®
LOW DROP OR-ing POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS
A1
K
IF(AV)
2 x 40 A
VRRM
15 V
Tj (max)
125 °C
VF (max)
0.33 V
A2
FEATURES AND BENEFITS
n
n
n
n
n
Max247
PACKAGE,
DUAL
DIODE
CONSTRUCTION, 2 x 40A
15V BLOCKING VOLTAGE SUITABLE FOR 5V
AND 12V OR-ing
EXTREMELY LOW VOLTAGE VOLTAGE
DROP: 0.33V @ 100°C
OPERATING JUNCTION TEMPERATURE:
125°C
AVALANCHE CAPABILITY SPECIFIED
A2
K
A1
Max247
DESCRIPTION
The STPS80L15CY uses proprietary barrier
technology to optimize forward voltage drop for
OR-ing functions in n-1 fault tolerant Switch Mode
Power Supplies.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
15
V
IF(RMS)
RMS forward current
50
A
40
80
A
400
A
2
A
36045
W
- 65 to + 150
°C
125
°C
10000
V/µs
IF(AV)
Average forward current
Tc = 110°C
δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
IRRM
Repetitive peak reverse current
tp = 2 µs F = 1kHz square
PARM
Repetitive peak avalanche power
tp = 1µs
Tstg
Tj
dV/dt
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
July 2003 - Ed: 5B
Per diode
Per device
Tj = 25°C
1/5
STPS80L15CY
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
Junction to case
Rth (c)
Value
Unit
Per diode
0.7
°C/W
Total
0.5
Coupling
0.3
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR *
Reverse leakage current
Tests conditions
Tj = 25°C
280
VR = 12V
Tj = 100°C
Tj = 25°C
Forward voltage drop
VR = 15V
0.53
Tj = 25°C
IF = 40 A
Tj = 100°C
IF = 40 A
Tj = 25°C
IF = 80 A
Tj = 100°C
IF = 80 A
Pulse test :* tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.20 x IF(AV) + 0.0032 x IF2(RMS)
2/5
Max.
Unit
4
mA
400
11
0.44
Tj = 100°C
VF *
Typ.
VR = 5V
Tj = 100°C
Tj = 25°C
Min.
0.30
1.1
A
16
mA
1.3
A
0.42
V
0.33
0.55
0.40
0.46
STPS80L15CY
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
22
20
18
16
14
12
10
8
6
4
2
0
PF(av)(W)
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
δ=1
T
IF(av) (A)
0
5
δ=tp/T
tp
10 15 20 25 30 35 40 45 50 55 60
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
50
45
40
35
30
25
20
15
10
5
0
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
T
δ=tp/T
0
25
50
75
100
125
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
Tamb(°C)
tp
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
600
50
75
100
125
150
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse (per diode).
1.0
500
0.8
400
Tc=25°C
0.6
Tc=50°C
300
0.4
200
δ=0.5
δ=0.2
δ=0.1
Tc=75°C
IM
t
1E-2
T
0.2
Single pulse
t(s)
δ=0.5
0
1E-3
25
Zth(j-c)/Rth(j-c)
IM(A)
100
0
1000
1E-1
1E+0
0.0
1E-3
δ=tp/T
tp(s)
1E-2
1E-1
tp
1E+0
3/5
STPS80L15CY
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
10
1E+3
C(nF)
F=1MHz
Tj=25°C
Tj=100°C
Tj=75°C
1E+2
5
1E+1
Tj=25°C
2
1E+0
VR(V)
VR(V)
1E-1
1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Fig. 9: Forward voltage drop versus forward
current (per diode).
200
IFM(A)
100
Tj=100°C
(typical values)
Tj=100°C
(Maximum values)
10
Tj=25°C
(Maximum values)
VFM(V)
1
0.0
4/5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1
2
5
10
20
STPS80L15CY
PACKAGE MECHANICAL DATA
Max247
DIMENSIONS
REF.
E
L1
A1
L
b1
b2
e
Ordering type
b
Marking
STPS80L15CY STPS80L15CY
n
n
Inches
Min.
Max.
Min.
Max.
A
4.70
5.30
0.185
0.209
A1
2.20
2.60
0.087
0.102
b
1.00
1.40
0.038
0.055
b1
2.00
2.40
0.079
0.094
b2
3.00
3.40
0.118
0.133
c
0.40
0.80
0.016
0.031
D
19.70
10.30
0.776
0.799
e
5.35
5.55
0.211
0.219
E
15.30
15.90
0.602
0.626
L
14.20
15.20
0.559
0.598
L1
3.70
4.30
0.146
0.169
A
D
Millimeters
c
Package
Weight
Base qty
Delivery mode
Max247
4.4g
30
Tube
Cooling method: by conduction (C)
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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