TPDV640 ---> TPDV1240 ® ALTERNISTORS A2 FEATURES High commutation: > 142A/ms (400Hz) Insulating voltage = 2500V(RMS) (UL Recognized: EB81734) High voltage capability: VDRM = 1200V ■ ■ G ■ A1 DESCRIPTION The TPDV640 ---> TPDV1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) A1 A2 G TOP3 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Parameter Value Unit RMS on-state current (360° conduction angle) Tc = 75°C 40 A Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 2.5ms 590 A tp = 8.3ms 370 tp = 10ms 350 I2t value tp = 10ms 610 A2s Critical rate of rise of on-state current Gate supply: IG = 500mA dIG/dt = 1A/µs Repetitive F = 50Hz 20 A/µs Non repetitive 100 Storage and operating junction temperature range -40 to +150 -40 to +125 °C 260 °C Maximum lead soldering temperature during 10s at 4.5mm from case TPDV Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125°C September 2001 - Ed: 1A Unit 640 840 1040 1240 600 800 1000 1200 V 1/5 TPDV640 ---> TPDV1240 THERMAL RESISTANCES Symbol Parameter Rth (j-a) Value Unit °C/W Contact to ambient 50 Rth (j-c) DC Junction to case for DC 1.2 °C/W Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) 0.9 °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 8A (tp = 20µs) VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS Symbol Test conditions Quadrant Value Unit IGT VD = 12V (DC) RL = 33Ω Tj = 25°C I - II - III MAX. 200 mA VGT VD = 12V (DC) RL = 33Ω Tj = 25°C I - II - III MAX. 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj =125°C I - II - III MIN. 0.2 V tgt VD = VDRM IG = 500mA dIG/dt = 3A/µs Tj = 25°C I - II - III TYP. 2.5 µs IL IG = 1.2IGT Tj = 25°C I - III TYP. 100 mA II IH* 200 IT = 500mA Gate open Tj = 25°C TYP. 50 mA VTM* ITM = 60A Tj = 25°C MAX. 1.8 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.02 mA Tj = 125°C MAX. 8 tp = 380µs dV/dt * Linear slope up to VD = 67% VDRM gate open Tj = 125°C MIN. 500 V/µs (dI/dt)c* (dV/dt)c = 200V/µs Tj = 125°C MIN. 35 A/ms (dV/dt)c = 10V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 142 TPDV640 ---> TPDV1240 Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1.00 Zth(j-c) 0.10 Zth(j-a) 0.01 tp(s) 1E-3 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. 3/5 TPDV640 ---> TPDV1240 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 9: Safe operating area. 4/5 Fig. 8: On-state characteristics (maximum values). TPDV640 ---> TPDV1240 PACKAGE MECHANICAL DATA TOP3 (Plastic) DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 Typ. 0.181 Typ. OTHER INFORMATION ■ ■ ■ ■ Ordering type Marking Package Weight Base qty Delivery mode TPDVx40 TPDVx40 TOP3 4.5 g 120 Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5