TS912 RAIL TO RAIL CMOS DUAL OPERATIONAL AMPLIFIER ■ RAIL TO RAIL INPUT AND OUTPUT VOLTAGE RANGES ■ SINGLE (OR DUAL) SUPPLY OPERATION FROM 2.7V TO 16V ■ EXTREMELY LOW INPUT BIAS CURRENT : ■ ■ ■ ■ ■ ■ 1pA typ LOW INPUT OFFSET VOLTAGE : 2mV max. SPECIFIED FOR 600Ω AND 100Ω LOADS LOW SUPPLY CURRENT : 200µA/Ampli (VCC = 3V) LATCH-UP IMMUNITY ESD TOLERANCE : 3KV SPICE MACROMODEL INCLUDED IN THISSPECIFICATION N DIP8 (Plastic Package) DESCRIPTION D SO8 (Plastic Micropackage) The TS912 is a RAIL TO RAIL CMOS dual operational amplifier designed to operate with a single or dual supply voltage. The input voltage range Vicm includes the two supply rails VCC+ and VCC-. PIN CONNECTIONS (top view) At 3V, the output reaches : ❑ VCC- +30mV VCC+ -40mV with RL = 10kΩ ❑ VCC- +300mV VCC+ -400mV with RL = 600Ω This product offers a broad supply voltage operating range from 2.7V to 16V and a supply current of only 200µA/amp @ VCC = 3V. Source and sink output current capability is typically 40mA at VCC = 3V, fixed by an internal limitation circuit. 8 VCC Output 1 1 Inverting Input 1 2 - Non-inve rting Input 1 3 + VCC 4 + 7 Output 2 - 6 Inve rting Input 2 + 5 Non-inve rting Input 2 ORDER CODE Package Part Number TS912I/AI/BI Temperature Range -40, +125°C N D • • N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT) December 2001 1/12 TS912 SCHEMATIC DIAGRAM (1/2 TS912) VCC Interna l Vre f Non-inverting Input Inverting Input Output VCC ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Value 1) Unit 18 V ±18 V -0.3 to 18 V Current on Inputs ±50 mA Current on Outputs ±130 mA Supply voltage Vid Differential Input Voltage Vi Input Voltage 3) Iin Io 2) Toper Operating Free Air Temperature Range TS912I/AI/B I -40 to + 125 Tstg Storate Temperature -65 to +150 °C Value Unit °C 1. All voltages values, except differential voltage are with respect to network ground terminal. 2. Differential voltagesare non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output voltages must never exceed VCC+ +0.3V. OPERATING CONDITIONS Symbol VCC Vicm 2/12 Parameter Supply voltage Common Mode Input Voltage Range 2.7 to 16 - V + VCC -0.2 to VCC +0.2 V TS912 ELECTRICAL CHARACTERISTICS VCC+ = 3V, Vcc- = 0V, RL, CL connected to VCC/2, Tamb = 25°C (unless otherwise specified) Symbol Parameter Input Offset Voltage (Vic = Vo = VCC/2) Vio Tmin. ≤ Tamb ≤ Tmax. Min. Typ. TS912 TS912A TS912B TS912 TS912A TS912B Max. Unit 10 5 2 12 7 3 mV ∆Vio Input Offset Voltage Drift 5 Iio Input Offset Current 1) Tmin. ≤ Tamb ≤ Tmax. 1 100 200 pA Iib Input Bias Current 1) Tmin. ≤ Tamb ≤ Tmax. 1 150 300 pA ICC Supply Current (per amplifier, A VCL = 1, no load) T min. ≤ Tamb ≤ Tmax. 200 300 400 µA CMR Common Mode Rejection Ratio Vic = 0 to 3V, V o = 1.5V SVR Supply Voltage Rejection Ratio (VCC+ = 2.7 to 3.3V, Vo = VCC/2) Large Signal Voltage Gain (RL = 10kΩ, Vo = 1.2V to 1.8V) T min. ≤ Tamb ≤ Tmax. Avd µV/°C 70 dB 50 80 dB 3 2 10 V/mV High Level Output Voltage (Vid = 1V) VOH T min. ≤ Tamb ≤ Tmax. R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω 2.95 2.9 2.3 R L = 10kΩ R L = 600Ω 2.8 2.1 2.96 2.6 2 V Low Level Output Voltage (Vid = -1V) R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω VOL T min. ≤ Tamb ≤ Tmax. Io Output Short Circuit Current (Vid = ±1V) 30 300 900 Sink (Vo = VCC+) mV 100 600 R L = 10kΩ R L = 600Ω Source (Vo = VCC-) 50 70 400 20 20 40 40 mA GBP Gain Bandwith Product (AVCL = 100, RL = 10kΩ, C L = 100pF, f = 100kHz) 0.8 MHz SR+ Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, V i = 1.3V to 1.7V) 0.4 V/µs SR - Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, V i = 1.3V to 1.7V) 0.3 V/µs φm Phase Margin 30 Degrees en Equivalent Input Noise Voltage (R s = 100Ω, f = 1kHz) 30 nV/√Hz 1. Maximum values including unavoidable inaccuracies of the industrial test 3/12 TS912 ELECTRICAL CHARACTERISTICS VCC+ = 5V, Vcc- = 0V, RL, CL connected to VCC/2, Tamb = 25°C (unless otherwise specified) Symbol Parameter Input Offset Voltage (Vic = Vo = VCC/2) Vio Tmin. ≤ Tamb ≤ Tmax. Min. Typ. TS912 TS912A TS912B TS912 TS912A TS912B Max. Unit 10 5 2 12 7 3 mV ∆Vio Input Offset Voltage Drift 5 Iio Input Offset Current 1) Tmin. ≤ Tamb ≤ Tmax. 1 100 200 pA Iib Input Bias Current 1) Tmin. ≤ Tamb ≤ Tmax. 1 150 300 pA ICC Supply Current (per amplifier, A VCL = 1, no load) T min. ≤ Tamb ≤ Tmax. 230 350 450 µA µV/°C CMR Common Mode Rejection Ratio Vic = 1.5 to 3.5V, Vo = 2.5V 60 85 dB SVR Supply Voltage Rejection Ratio (VCC+ = 3 to 5V, V o = VCC/2) 55 80 dB Large Signal Voltage Gain (RL = 10kΩ, Vo = 1.5V to 3.5V) T min. ≤ Tamb ≤ Tmax. 10 7 40 Avd V/mV High Level Output Voltage (Vid = 1V) VOH T min. ≤ Tamb ≤ Tmax. R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω 4.95 4.9 4.25 R L = 10kΩ R L = 600Ω 4.8 4.1 4.95 4.55 3.7 V Low Level Output Voltage (Vid = -1V) R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω VOL T min. ≤ Tamb ≤ Tmax. Output Short Circuit Current (Vid = ±1V) Io 40 350 1400 Sink (Vo = VCC+) mV 150 750 R L = 10kΩ R L = 600Ω Source (Vo = VCC-) 50 100 500 45 45 65 65 mA 1 MHz GBP Gain Bandwith Product (AVCL = 100, RL = 10kΩ, C L = 100pF, f = 100kHz) SR + Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, V i = 1V to 4V) 0.8 - SR Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, V i = 1V to 4V) 0.6 V/µs en Equivalent Input Noise Voltage (R s = 100Ω, f = 1kHz) 30 nV/√Hz VO1 /VO2 Channel Separation (f = 1kHz) φm Phase Margin 1. Maximum values including unavoidable inaccuracies of the industrial test 4/12 120 dB 30 Degrees TS912 ELECTRICAL CHARACTERISTICS VCC+ = 10V, Vcc- = 0V, RL, CL connected to VCC/2, Tamb = 25°C (unless otherwise specified) Symbol Parameter Input Offset Voltage (Vic = Vo = VCC/2) Vio ∆Vio Tmin. ≤ Tamb ≤ Tmax. Min. Typ. TS912 TS912A TS912B TS912 TS912A TS912B Input Offset Voltage Drift Max. Unit 10 5 2 12 7 3 mV µV/°C 5 1) Iio Input Offset Current Tmin. ≤ Tamb ≤ Tmax. 1 100 200 pA Iib Input Bias Current 1) Tmin. ≤ Tamb ≤ Tmax. 1 150 300 pA ICC Supply Current (per amplifier, A VCL = 1, no load) T min. ≤ Tamb ≤ Tmax. 400 600 700 µA CMR Common Mode Rejection Ratio Vic = 3 to 7V, V o = 5V Vic = 0 to 10V, V o = 5V 60 50 90 75 dB SVR Supply Voltage Rejection Ratio (VCC+ = 5 to 10V, V o = VCC/2) 60 90 dB Large Signal Voltage Gain (RL = 10kΩ, Vo = 2.5V to 7.5V) T min. ≤ Tamb ≤ Tmax. 15 10 50 Avd V/mV High Level Output Voltage (Vid = 1V) VOH T min. ≤ Tamb ≤ Tmax. R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω 9.95 9.85 9 R L = 10kΩ R L = 600Ω 9.8 8.8 9.95 9.35 7.8 V Low Level Output Voltage (Vid = -1V) R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω VOL T min. ≤ Tamb ≤ Tmax. Io GBP Output Short Circuit Current (Vid = ±1V) 50 650 2300 Sink (Vo = VCC+) Gain Bandwith Product (AVCL = 100, RL = 10kΩ, C L = 100pF, f = 100kHz) mV 150 900 R L = 10kΩ R L = 600Ω Source (Vo = VCC-) 50 150 800 45 50 65 75 mA 1.4 MHz V/µs SR + Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, V i = 2.5V to 7.5V) 1.3 SR- Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, V i = 2.5V to 7.5V) 0.8 φm Phase Margin 40 Degrees en Equivalent Input Noise Voltage (R s = 100Ω, f = 1kHz) 30 nV/√Hz Total Harmonic Distortion (AVCL = 1, RL = 10kΩ, CL = 100pF, V o = 4.75V to 5.25V, f = 1kHz) 0.02 % Input Capacitance 1.5 pF THD Cin 1. Maximum values including unavoidable inaccuracies of the industrial test 5/12 TS912 TYPICAL CHARACTERISTICS Supply Current (each amplifier) vs Supply Voltage Figure 2 : Input Bias Current vs Temperature 100 600 INPUT BIAS CURRENT, I ib (pA) SUPPLY CURRENT, I CC ( µ A) Figure 1 : Ta m b = 25 C A VCL = 1 VO = VCC / 2 500 400 300 200 100 VCC = 10V Vi = 5V No loa d 10 1 0 4 8 12 16 25 50 S UP P LYVOLTAGE, V CC (V) Figure 3a : High Level Output Voltage vs High Level Output Current 4 OUTPUT VOLTAGE, VOH (V) OUTPUT VOLTAGE, VOH (V) 125 20 T a mb = 25 C V id = 100mV VCC = +5V 3 2 VCC = +3V 1 T a mb = 25 C Vid = 100m V 16 VCC = +16V 12 VCC = +10V 8 4 0 0 -70 -56 -42 -28 -14 0 -70 OUTPUT CURRENT, IOH (mA) T amb = 25 C V id = -100mV VCC = +3V 2 VCC = +5V 1 0 -28 -14 0 10 OUTPUT VOLTAGE, VOL (V) 3 -42 Figure 4b : Low Level Output Voltage vs Low Level Output Current 5 4 -56 OUTP UT C URRENT, IOH (mA) Figure 4a : Low Level Output Voltage vs Low Level Output Current OUTPUT VOLTAGE, V OL (V) 100 Figure 3b : High Level Output Voltage vs High Level Output Current 5 14 28 42 56 70 OUTPUT CURRENT, I OL (mA) 6/12 75 TEMPER ATURE, Tamb ( C) 8 T amb = 25 C V id = -100mV 6 VCC = 16V 4 VCC = 1 0V 2 0 14 28 42 56 70 OUTP UT CURRENT, I OL (mA) TS912 Figure 5a : Gain and Phase vs Frequency Figure 5b : Gain and Phase vs Frequency 50 50 P ha s e Margin 20 90 Ta mb = 25 C VCC = 10V R L = 10k Ω C L = 100pF AVCL = 100 10 0 135 Ga in Ba ndwidth P roduc t 180 GAIN (dB) P HAS E 45 PHASE (Degrees) GAIN (dB) 30 10 3 4 5 6 10 10 10 FREQUENCY, f (Hz) 10 7 GAIN BANDW. PROD., GBP (kHz) Figure 6a : Gain Bandwidth Product vs Supply Voltage 1800 Tamb = 25 C R L = 10kΩ C L = 100pF 1400 1000 600 200 0 4 8 12 16 2 Tamb = 25 C R L = 10kΩ C L = 100pF 40 30 20 8 12 SUP PLY VOLTAGE, VCC (V) 4 180 5 10 10 10 FREQUE NCY, f (Hz) 6 10 7 1800 Tamb = 25 C R L = 600Ω C L = 100pF 1400 1000 600 200 0 4 8 12 16 Figure 7b : Phase Margin vs Supply Voltage PHASE MARGIN, φm (Degrees) PHASE MARGIN, φ m (Degrees) 60 4 3 135 Ga in Ba ndwidth Product SUPP LY VOLTAGE, VCC (V) Figure 7a : Phase Margin vs Supply Voltage 0 10 90 Figure 6b : Gain Bandwidth Product vs Supply Voltage S UP P LY VOLTAGE, VCC (V) 50 Pha s e Margin Ta mb = 25 C VCC = 10V R L = 600Ω C L = 100pF A VCL = 100 20 10 45 P HASE 0 10 GAIN BANDW. PROD., GBP (kHz) 2 0 30 10 -10 10 GAIN 40 0 PHASE (Degrees) GAIN 40 16 60 Tamb = 25 C R L = 600Ω C L = 100pF 50 40 30 20 0 4 8 12 16 S UPP LY VOLTAGE, VCC (V) 7/12 TS912 EQUIVALENT INPUT VOLTAGE NOISE (nV/VHz) Figure 8 : 8/12 Input Voltage Noise vs Frequency 150 100 VCC = 10V Ta mb = 25 C R S = 100 Ω 50 0 10 1000 100 FREQUENCY (Hz) 10000 TS912 MACROMODEL Applies to : TS912 (VCC = 3V) ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS912_3 1 3 2 4 5 (analog) ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 6.500000E+00 RIN 15 16 6.500000E+00 RIS 11 15 1.271505E+01 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 2.125860E-08 DINN 17 13 MDTH 400E-12 VIN 17 5 0.000000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.000000E+00 FCN 5 4 VOFN 5.000000E+00 * AMPLIFYING STAGE FIP 5 19 VOFP 2.750000E+02 FIN 5 19 VOFN 2.750000E+02 RG1 19 5 1.916825E+05 RG2 19 4 1.916825E+05 CC 19 29 2.200000E-08 HZTP 30 29 VOFP 1.3E+03 HZTN 5 30 VOFN 1.3E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 150 HONM 21 27 VOUT 3800 VINM 5 27 150 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 75 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E8 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus de vio * 500 ** c.a.d 275U-000U dus a l’offset DSCP1 61 63 MDTH 400E-12 VSCP1 63 64 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous de vio * 2000 ** c.a.d -375U-000U dus a l’offset ESCP 60 0 2 1 500 ESCN 70 0 2 1 -2000 .ENDS ELECTRICAL CHARACTERISTICS VCC+ = 3V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25°C (unless otherwise specified) Symbol Conditions Vio Avd R L = 10kΩ ICC No load, per operator V icm Value Unit 0 mV 10 V/mV 200 µA -0.2 to 3.2 V VOH R L = 10kΩ 2.96 V VOL R L = 10kΩ 30 mV Isink VO = 3V 40 mA Isource VO = 0V 40 mA GBP R L = 10kΩ, CL = 100pF 0.8 MHz SR R L = 10kΩ, CL = 100pF 0.3 V/µs 9/12 TS912 MACROMODEL Applies to : TS912 (VCC = 5V) ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY * 6 STANDBY .SUBCKT TS912_5 1 3 2 4 5 (analog) ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 6.500000E+00 RIN 15 16 6.500000E+00 RIS 11 15 7.322092E+00 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 2.498970E-08 DINN 17 13 MDTH 400E-12 VIN 17 5 0.000000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.750000E+00 FCN 5 4 VOFN 5.750000E+00 ISTB0 5 4 500N * AMPLIFYING STAGE FIP 5 19 VOFP 4.400000E+02 FIN 5 19 VOFN 4.400000E+02 RG1 19 5 4.904961E+05 RG2 19 4 4.904961E+05 CC 19 29 2.200000E-08 HZTP 30 29 VOFP 1.8E+03 HZTN 5 30 VOFN 1.8E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 230 HONM 21 27 VOUT 3800 VINM 5 27 230 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 82 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E+08 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus de vio * 500 ** c.a.d 275U-000U dus a l’offset DSCP1 61 63 MDTH 400E-12 VSCP1 63 64 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous de vio * 2000 ** c.a.d -375U-000U dus a l’offset ESCP 60 0 2 1 500 ESCN 70 0 2 1 -2000 .ENDS ELECTRICAL CHARACTERISTICS VCC+ = 5V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25°C (unless otherwise specified) Symbol Conditions Vio Avd R L = 10kΩ ICC No load, per operator V icm Value Unit 0 mV 50 V/mV 230 µA -0.2 to 5.2 V VOH R L = 10kΩ 4.95 V VOL R L = 10kΩ 40 mV Isink VO = 5V 65 mA Isource VO = 0V 65 mA GBP R L = 10kΩ, CL = 100pF 1 MHz SR R L = 10kΩ, CL = 100pF 0.8 V/µs 10/12 TS912 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Millimeters Inches Dim. Min. A a1 B b b1 D E e e3 e4 F i L Z Typ. Max. Min. 3.32 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 7.95 0.020 0.045 0.014 0.008 Max. 0.065 0.022 0.012 0.430 0.384 0.313 2.54 7.62 7.62 0.100 0.300 0.300 6.6 3.18 Typ. 0.131 5.08 3.81 1.52 0260 0.125 0.200 0.150 0.060 11/12 TS912 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Millimeters Inches Dim. Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S Typ. Max. 0.65 0.35 0.19 0.25 1.75 0.25 1.65 0.85 0.48 0.25 0.5 4.8 5.8 5.0 6.2 0.1 Min. Typ. Max. 0.026 0.014 0.007 0.010 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 45° (typ.) 1.27 0.050 3.81 3.8 0.4 0.150 4.0 1.27 0.6 0.150 0.016 0.157 0.050 0.024 8° (max.) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infring ement of patents or other righ ts of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change witho ut notice. This publ ication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life suppo rt devices or systems withou t express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Swit zerland - United Kingdom - United States http://www. st.com 12/12