ETC TSL265

TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
PACKAGE
(TOP VIEW)
High Sensitivity
Rail-to-Rail Output
Single Voltage Supply Operation
Monolithic Silicon IC Containing
Photodiode, Operational Amplifier, and
Feedback Components
Converts NIR Light Intensity to Output
Voltage
1
2
3
Compact 3-Leaded Infrared-Transmissive
Plastic Package
Wide Supply-Voltage Range
Low Supply Current
GND VDD
OUT
Description
The TSL265 is a high-sensitivity light-to-voltage optical converter that combines a photodiode and a
transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional
to near infrared (NIR) light intensity (irradiance) on the photodiode. The TSL265 has a transimpedance gain of
3.2 GΩ. Bandwidth and signal-to-noise ratio are optimized by means of a patented design that minimizes the
effects of photodiode capacitance. It uses design techniques that provide improved offset voltage stability and
low power consumption, and is supplied in a 3-lead visible-light-blocking sidelooker package with an integral
lens.
The TSL265 is intended for NIR light-sensing applications requiring ultrahigh sensitivity where a linear voltage
output is desired.
Functional Block Diagram
–
Voltage
Output
+
Terminal Functions
TERMINAL
NAME
DESCRIPTION
NO.
GND
1
Ground (substrate). All voltages are referenced to GND.
OUT
3
Output voltage
VDD
2
Supply voltage
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Copyright  2000, TAOS Inc.
Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 Plano, TX 75074 (972) 673-0759
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TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
Supply voltage, VDD
Operating free-air temperature, TA
MIN
MAX
2.7
6
UNIT
V
0
70
°C
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 880 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
VD
TEST CONDITIONS
Dark voltage
MIN
TYP
Ee = 0
VDD = 4.5 V,
,RL = 0,
VDD = 4.5 V,
RL = 10 kΩ
MAX
UNIT
100
mV
4.49
VOM
Maximum output voltage swing
VO
Output voltage
Ee = 156 mW/cm2
αvo
Temperature coefficient of output voltage (VO)
Irradiance responsivity
TA = 0°C to 70°C,
Power supply
y rejection
j
fac = 100 Hz,
1.3 VO(pp)
32
dB
fac = 1 kHz,
1.3 VO(pp)
19
dB
Ne
IDD
4
1.6
See Note 2
Supply current
V
4.2
2
2.4
V
TBD
%/°C
12.8
V/(µW/cm2)
2.5
4.5
mA
NOTES: 2. The input irradiance Ee is supplied by a GaAlAs infrared-emitting diode with λp = 880 nm.
3. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V.
Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 880 nm, RL = 10 kΩ (unless otherwise noted)
(see Note 3)
TYP
MAX
UNIT
tr
Output pulse rise time
PARAMETER
See Notes 4 and 5
TEST CONDITIONS
166
250
µs
tf
Output pulse fall time
See Notes 4 and 5
163
250
µs
ts
Output settling time
Integrated noise voltage
f = dc to 1 kHz
Output noise voltage,
g , rms
f = 100 Hz
f = 10 Hz,
Vn
MIN
See Note 6
µs
3.5
mV RMS
92
86
f = 1 Hz
NOTES: 3.
4.
5.
6.
322
µV/√Hz
µ
√
RMS
104
Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V.
Measured with RL = 10 kΩ between output and ground.
The output waveform is monitored on an oscilloscope with Zi = 1 MΩ, Ci < 20 pF.
Measured with external 1-kHz RC filter (10 kΩ/15.9 nF)
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TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
PARAMETER MEASUREMENT INFORMATION
VDD
Pulse
Generator
Ee
2
Input
–
IRED
(see Note A)
3
tf
tr
Output
+
90%
RL
TSL265
1
Output
(see Note B)
10%
90%
10%
VOLTAGE WAVEFORM
TEST CIRCUIT
NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics: λp = 880 nm,
tr < 1 µs, tf < 1 µs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MHz, Ci ≤ 20 pF.
Figure 1. Switching Times
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE
vs
IRRADIANCE
PHOTODIODE SPECTRAL RESPONSE
10
1
0.9
TA = 25°C
0.8
1
Relative Responsivity
VO – Output Voltage – V
VDD = 5 V
λp = 880 nm
No Load
TA = 25°C
0.1
0.7
0.6
0.5
0.4
0.3
0.01
0.2
0.1
0.001
1
10
100
Ee – Irradiance – nW/cm2
1000
0
600
700
Figure 2
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1100
Figure 3
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800
900
1000
λ – Wavelength – nm
3
TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
TYPICAL CHARACTERISTICS
NORMALIZED OUTPUT VOLTAGE
vs
ANGULAR DISPLACEMENT
MAXIMUM OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
1
Ee = 2 mW/cm2
λp = 880 nm
RL = 10 kΩ
TA = 25°C
0.8
3
2
1
3.5
4
4.5
VDD – Supply Voltage – V
0.4
0.2
0
80°
0
3
0.6
5
Optical Axis
4
VO – Normalized Output Voltage
VOM – Maximum Output Voltage – V
5
60°
40° 20°
0°
20° 40°
θ – Angular Displacement
Figure 4
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
40
0.62
TA = 25°C
35
0.61
I DD– Supply Current – mA
Power Supply Rejection Ratio – dB
80°
Figure 5
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
30
25
20
15
10
5
0
0.01 k
60°
VDD = 5.5 V
No Load
0.60
0.59
0.58
0.57
0.56
0.55
0.1 k
1k
10 k
100 k
1000 k
0.54
0
10
20
30
40
50
60
70
TA – Free-Air Temperature – °C
f – Frequency – Hz
Figure 6
Figure 7
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TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
TYPICAL CHARACTERISTICS
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
0.7
1.2
VO – Output Voltage – Normelized to – 25 °C
TA = 25°C
No Load
I DD – Supply Current – mA
0.6
0.5
0.4
0.3
0.2
0.1
0
2.7
VDD = 5V
λp = 300 nm to 700 nm
1
0.8
0.6
0.4
0.2
0
3.2
3.7
4.2
4.7
5.2
VDD – Supply Voltage – V
5.7
0
10
50
60
20
30
40
TA – Free-Air Temperature – °C
Figure 8
Figure 9
INTEGRATED NOISE VOLTAGE
vs
MEASUREMENT BANDWIDTH FREQUENCY
OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
8000
1.001
Vn – Integrated Noise Voltage – µ Vrms
V O – Output Voltage (Normalized) – V
1
0.999
0.998
0.997
0.996
0.995
0.994
0.993
0.992
0.991
0.99
2.5
70
VDD = 5 V
TA = 25°C
7000
6000
5000
4000
3000
2000
1000
0
3
3.5
4
4.5
5
5.5
VDD – Supply Voltage – V
6
6.5
10
100
Figure 10
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10000
Figure 11
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1000
f – Measurement Bandwidth Frequency – Hz
5
TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
MECHANICAL DATA
The TSL265 is implemented in a clear 3-leaded package with a large molded focusing lens.
0.072 (1,84)
0.056 (1,44)
0.189 (4,80)
0.173 (4,40)
0.035 (0,90)
0.012 (0,30)
0.165 (4,20)
0.150 (3,80)
0.070 (1,80)
0.029 (0,75)
0.070 (1,80)
1.10 (2,80)
0.016 (0,40)
0.189 (4,80)
0.173 (4,40)
R 0.035 (0,90)
0.079 (2,00)
0.039 (1,00)
0.027 (0,70)
0.025 (0,65)
0.622 (15,80)
0.543 (13,80)
1
0.079 (2,00)
2
3
0.018 (0,45)
0.018 (0,45)
0.157 (4,00)
Figure 12. Package Configuration
NOTES: A.
B.
C.
D.
E.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
All dimensions apply before solder dip.
Package body is a clear nonfilled optically transparent material
Index of refraction of clear plastic is 1.55.
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TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
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TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
www.taosinc.com
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