ETC TN1215

TN12, TS12 and TYNx12 Series
®
12A SCRs
SENSITIVE & STANDARD
MAIN FEATURES:
A
Symbol
Value
Unit
IT(RMS)
12
A
VDRM/VRRM
600 to 1000
V
IGT
0.2 to 15
mA
G
K
A
A
K A
K A
G
DESCRIPTION
Available either in sensitive (TS12) or standard
(TYN, TN12...) gate triggering levels, the 12A SCR
series is suitable to fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
Available in though-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
G
DPAK
(TS12-B)
(TN12-B)
D2PAK
(TN12-G)
A
A
K
A
K
G
A
IPAK
(TS12-H)
(TN12-H)
G
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
Parameter
Value
Unit
A
RMS on-state current (180° conduction angle)
Tc = 105°C
12
Average on-state current (180° conduction angle)
Tc = 105°C
8
A
²
DPAK /
IPAK
D PAK /
TO-220AB
115
146
110
140
60
98
Non repetitive surge peak
on-state current
tp = 8.3 ms
I²t Value for fusing
tp = 10 ms
Tj = 25°C
dI/dt
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
5
V
ITSM
I ²t
PG(AV)
Tstg
Tj
VRGM
tp = 10 ms
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN12 & TYN)
September 2000 - Ed: 3
Tj = 25°C
A
A²S
1/10
TN12, TS12 and TYNx12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■
SENSITIVE
Symbol
IGT
Test Conditions
RL = 140 Ω
VD = 12 V
VGT
Unit
MAX.
200
µA
MAX.
0.8
V
MIN.
0.1
V
MIN.
8
V
VGD
VD = VDRM
VRG
IRG = 10 µA
IH
IT = 50 mA
RGK = 1 kΩ
MAX.
5
mA
IG = 1 mA
RGK = 1 kΩ
MAX.
6
mA
Tj = 125°C
MIN.
5
V/µs
Tj = 25°C
MAX.
1.6
V
MAX.
0.85
V
IL
RL = 3.3 kΩ
RGK = 1 kΩ
RGK = 220 Ω
dV/dt
VD = 67 % VDRM
VTM
ITM = 24 A
Vt0
Threshold voltage
Tj = 125°C
Rd
Dynamic resistance
Tj = 125°C
MAX.
30
mΩ
Tj = 25°C
MAX.
5
µA
2
mA
IDRM
IRRM
■
Tj = 125°C
TS1220
tp = 380 µs
RGK = 220 Ω
VDRM = VRRM
Tj = 125°C
STANDARD
TN1215
Symbol
Unit
B/H
IGT
RL = 33 Ω
VD = 12 V
VGT
VGD
VD = VDRM
RL = 3.3 kΩ
IH
IT = 500 mA
Gate open
IL
IG = 1.2 IGT
dV/dt
VD = 67 % VDRM
VTM
ITM = 24 A
Vt0
Rd
IDRM
IRRM
TYN
Test Conditions
Gate open
G
x12T
x12
MIN.
2
0.5
2
MAX.
15
5
15
mA
MAX.
1.3
V
MIN.
0.2
V
Tj = 125°C
MAX.
40
30
15
30
mA
MAX.
80
60
30
60
mA
40
200
V/µs
Tj = 125°C
MIN.
Tj = 25°C
MAX.
1.6
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Dynamic resistance
Tj = 125°C
MAX.
30
mΩ
Tj = 25°C
MAX.
5
µA
2
mA
tp = 380 µs
VDRM = VRRM
200
Tj = 125°C
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
S = 1 cm²
S = 0.5
S = Copper surface under tab
2/10
cm²
Value
Unit
1.3
°C/W
TO-220AB
60
°C/W
IPAK
100
D²PAK
45
DPAK
70
TN12, TS12 and TYNx12 Series
PRODUCT SELECTOR
Voltage (xxx)
Part Number
600 V
700 V
800 V
Sensitivity
Package
15 mA
DPAK
15 mA
D²PAK
15 mA
IPAK
1000 V
TN1215-xxxB
X
X
TN1215-xxxG
X
X
TN1215-xxxH
X
X
TS1220-xxxB
X
X
0.2 mA
DPAK
TS1220-xxxH
X
X
0.2 mA
IPAK
TYNx12
X
X
X
30 mA
TO-220AB
TYNx12T
X
X
X
15 mA
TO-220AB
X
ORDERING INFORMATION
TN 12 15 - 600 B (-TR)
STANDARD
SCR
SERIES
CURRENT: 12A
SENSITIVITY:
15: 15mA
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
PACKING MODE:
Blank: Tube
-TR: D2PAK & DPAK
Tape & Reel
PACKAGE:
B: DPAK
H: IPAK
G: D2PAK
TS 12 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
CURRENT: 12A
SENSITIVITY:
20: 200µA
TYN
6
VOLTAGE:
600: 600V
700: 700V
12
STANDARD
SCR
SERIES
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
PACKAGE:
B: DPAK
H: IPAK
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
T
SENSITIVITY:
Blank: 30mA
T: 15mA
CURRENT: 12A
3/10
TN12, TS12 and TYNx12 Series
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
TN1215-x00B
TS1215x00
0.3 g
75
Tube
TN1215-x00B-TR
TS1215x00
0.3 g
2500
Tape & reel
TN1215-x00G
TS1215x00G
1.5 g
50
Tube
TN1215-x00G-TR
TS1215x00G
1.5 g
1000
Tape & reel
TN1215-x00H
TN1215x00
0.4 g
75
Tube
TS1220-x00B
TS1220x00
0.3 g
75
Tube
TS1220-x00B-TR
TS1220x00
0.3 g
2500
Tape & reel
TS1220-x00H
TS1220x00
0.4 g
75
Tube
TYNx12
TYNx12
2.3 g
250
Bulk
TYNx12RG
TYNx12
2.3 g
50
Tube
TYNx12T
TYNx12T
2.3 g
250
Bulk
TYNx12TRG
TYNx12T
2.3 g
50
Tube
Note: x = voltage
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
12
11 α = 180°
10
9
8
7
6
5
4
3
2
1
0
0
1
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
IT(av)(A)
14
DC
12
10
α = 180°
8
6
360°
3
4
5
2
α
IT(av)(A)
2
4
6
7
8
9
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK and
D2PAK).
0
Tcase(°C)
0
25
50
75
100
125
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration.
IT(av)(A)
K = [Zth(j-c)/Rth(j-c)]
3.0
1.0
2.5
DC
D2PAK
2.0
1.5
0.5
α = 180°
DPAK
1.0
0.2
0.5
Tamb(°C)
0.0
4/10
0
25
50
75
tp(s)
100
125
0.1
1E-3
1E-2
1E-1
1E+0
TN12, TS12 and TYNx12 Series
Fig. 3-2:
Relative variation of thermal
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board).
Fig. 4-1: Relative variation of gate trigger
current, holding current and latching versus
junction temperature for TS12 series.
K = [Zth(j-a)/Rth(j-a)]
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
1.00
DPAK
D2PAK
0.10
TO-220AB
tp(s)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig. 4-2: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature for TN12 & TYN
series.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
IGT
IH & IL
Tj(°C)
-20
0
20
40
60
80
100
120
140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS12 series.
10.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
IH & IL
Rgk = 1k Ω
Tj(°C)
-20
0
20
40
60
80
100
120
140
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS12 series.
IH[Rgk] / IH[Rgk = 1k Ω]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Rgk(kΩ)
0.0
1E-2
1E-1
1E+0
Tj = 25°C
1E+1
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS12 series.
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]
Tj = 125°C
VD = 0.67 x VDRM
IGT
4.0
dV/dt[Cgk] / dV/dt [Rgk = 220Ω]
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220Ω
3.5
3.0
2.5
1.0
2.0
1.5
1.0
Rgk(kΩ)
0.1
0.0
0.2
0.4
0.6
0.5
0.8
1.0
1.2
0.0
Cgk(nF)
0
25
50
75
100
125
150
5/10
TN12, TS12 and TYNx12 Series
Fig. 8: Surge peak on-state current versus
number of cycles (TS12/TN12/TYN).
10.0
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]
ITSM(A),I 2t(A2s)
2000
Tj = 125°C
VD = 0.67 x VDRM
Tjinitial=25 °C
ITSM
1000
TYN/TN12
TS12
dI/dt
limitattion
1.0
TYN/TN12
100
I2t
TS12
Rgk(kΩ)
0.1
0.0
0.2
0.4
0.6
tp(ms)
0.8
1.0
1.2
Fig. 10: On-state characteristics (maximum
values).
10
0.01
100
1.00
10.00
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm) .
ITM(A)
200
0.10
Rth(j-a)( °C/W)
100
Tj max.:
Vto = 0.85V
Rd = 30m Ω
80
60
Tj = Tjmax.
DPAK
10
40
Tj = 25°C
D2PAK
20
S(cm 2)
VTM(V)
1
0.0
6/10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
2
4
6
8
10
12
14
16
18
20
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
DPAK (Plastic)
DIMENSIONS
REF.
Millimeters
Min.
R
R
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
R
V2
Max
2.20
2.40
0.90
1.10
0.03
0.23
0.64
0.90
5.20
5.40
0.45
0.60
0.48
0.60
6.00
6.20
6.40
6.60
4.40
4.60
9.35
10.10
0.80 typ.
0.60
1.00
0.2 typ.
0°
8°
Inches
Min.
Max.
0.086
0.094
0.035
0.043
0.001
0.009
0.025
0.035
0.204
0.212
0.017
0.023
0.018
0.023
0.236
0.244
0.251
0.259
0.173
0.181
0.368
0.397
0.031 typ.
0.023
0.039
0.007 typ.
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
DPAK (Plastic)
6.7
6.7
3
3
1.6
1.6
2.3
2.3
7/10
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
D2PAK (Plastic)
DIMENSIONS
REF.
A
E
Min.
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
2.0 MIN.
FLAT ZONE
V2
FOOTPRINT DIMENSIONS (in millimeters)
D2PAK (Plastic)
16.90
10.30
5.08
1.30
3.70
8.90
8/10
Millimeters
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
R
V2
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
Typ.
4.60
2.69
0.23
0.93
1.40
0.40
0°
Max.
Inches
Min.
Typ.
Max.
0.169
0.181
0.098
0.106
0.001
0.009
0.027
0.037
0.048 0.055
0.60 0.017
0.024
1.36 0.047
0.054
9.35 0.352
0.368
10.28 0.393
0.405
5.28 0.192
0.208
15.85 0.590
0.624
1.40 0.050
0.055
1.75 0.055
0.069
0.016
8°
0°
8°
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
IPAK (Plastic)
DIMENSIONS
REF.
Millimeters
Min.
A
E
C2
B2
L2
D
H
L
L1
B3
B6
B
A1
V1
B5
G
C
A3
A
A1
A3
B
B2
B3
B5
B6
C
C2
D
E
G
H
L
L1
L2
V1
Typ.
2.2
0.9
0.7
0.64
5.2
Inches
Max.
Min.
2.4
1.1
1.3
0.9
5.4
0.85
0.086
0.035
0.027
0.025
0.204
0.3
0.45
0.48
6
6.4
4.4
15.9
9
0.8
0.8
10°
Typ.
Max.
0.094
0.043
0.051
0.035
0.212
0.033
0.035
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.031 0.039
10°
9/10
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
B
REF.
C
Millimeters
Inches
b2
Min.
L
F
I
A
l4
c2
a1
l3
l2
a2
b1
M
c1
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M
Typ.
15.20
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
13.00
14.00 0.511
0.551
10.00
10.40 0.393
0.409
0.61
0.88 0.024
0.034
1.23
1.32 0.048
0.051
4.40
4.60 0.173
0.181
0.49
0.70 0.019
0.027
2.40
2.72 0.094
0.107
2.40
2.70 0.094
0.106
6.20
6.60 0.244
0.259
3.75
3.85 0.147
0.151
15.80 16.40 16.80 0.622 0.646 0.661
2.65
2.95 0.104
0.116
1.14
1.70 0.044
0.066
1.14
1.70 0.044
0.066
2.60
0.102
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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10/10