TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) SCR .. .. FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 058 ---> TYN/TXN 1008 Family of Silicon Controlled Rectifiers uses a high performance glass passivated chips technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. K A G TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter Value Unit RMS on-state current (180° conduction angle) TXN TYN Tc=100°C Tc=105°C 8 A IT(AV) Average on-state current (180° conduction angle,single phase circuit) TXN TYN Tc=100°C Tc=105°C 5 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp=8.3 ms 84 A tp=10 ms 80 tp=10 ms 32 A2s 50 A/µs - 40 to + 150 - 40 to + 125 °C °C 260 °C I2 t I2 t value dI/dt Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Tstg Tj Storage and operating junction temperature range Tl Symbol VDRM VRRM April 1995 Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C TYN/TXN Unit 058 108 208 408 608 808 1008 50 100 200 400 600 800 1000 V 1/5 TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 60 °C/W TXN 3.5 °C/W TYN 2.5 Junction to ambient Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol Value Unit BLANK G 15 25 IGT VD =12V (DC) R L=33Ω Tj=25°C MAX VGT VD =12V (DC) R L=33Ω Tj=25°C MAX 1.5 V VGD VD =VDRM RL=3.3kΩ Tj= 110°C MIN 0.2 V mA tgt VD =VDRM IG = 40mA dIG/dt = 0.5A/µs Tj=25°C TYP 2 µs IL IG= 1.2 IGT Tj=25°C TYP 50 mA IH IT= 100mA Tj=25°C MAX gate open 30 45 mA VTM ITM= 16A tp= 380µs Tj=25°C MAX 1.8 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA dV/dt Linear slope up to VD=67%VDRM gate open Tj= 110°C MIN VD =67%VDRM ITM= 16A VR= 25V dITM/dt=30 A/µs dVD /dt= 50V/µs Tj= 110°C TYP tq 2/5 Test Conditions Rated Rated Tj= 110°C 2 200 500 70 V/µs µs TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Package IT(RMS) TXN (Insulated) A VDRM / VRRM V BLANK G 8 50 X X 100 X X 200 X X 400 X X 600 X X 800 X X 1000 X X 50 X X 100 X X 200 X X 400 X X 600 X X 800 X X 1000 X X TYN (Uninsulated) Fig.1 : Maximum average power dissipation versus average on-state current (TXN). Sensitivity Specification Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (TXN). P (W) Tcase (oC) P (W) 8 8 360 Rth = 0 o C/W o 2.5 C/W 5 o C/W 10 o C/W O 7 7 DC 6 = 180 5 = 120 4 = 90 3 6 o = 30 1 o 1 2 -110 4 o = 180 o 3 -115 2 -120 o 1 I T(AV)(A) 0 0 3 4 5 6 o Tamb ( C) 7 Fig.3 : Maximum average power dissipation versus average on-state current (TYN). 0 0 20 40 60 80 100 Rth = 0 o C/W o 2.5 C/W 5 o C/W 10 o C/W O 8 DC 6 = 180 = 120 4 = 90 = 60 2 1 2 3 4 -115 = 180 o o 2 5 6 -105 -110 -120 I T(AV)(A) 4 -100 o o = 30 o 0 0 6 o -125 140 Tcase (o C) P (W) 10 8 120 Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (TYN). P (W) 10 360 -105 5 = 60 o 2 -100 7 o Tamb ( C) 8 0 0 20 40 60 80 100 120 -125 140 3/5 TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Fig.5 : Average temperature (TXN). on-state current versus case Fig.6 : Average temperature (TYN). I T(AV) (A) on-state current versus case I T(AV) (A) 10 10 DC DC 8 8 6 6 o o = 180 4 = 180 4 2 2 o o Tcase ( C) 0 0 Tcase ( C) 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.7 : Relative variation of thermal impedance versus pulse duration. 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.8 : Relative variation of gate trigger current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. 4/5 Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Fig.11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G I J D B F O P L C M = N= Cooling method : C Marking : type number Weight : 2.3 g A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as criti cal components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5