ETC UNR421L(UN421L)

Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
(UN4211/4212/4213/4214/4215/4216/4217/4218/4219/
4210/421D/421E/421F/421K/421L)
Unit: mm
4.0±0.2
3.0±0.2
Silicon NPN epitaxial planer transistor
15.6±0.5
For digital circuits
marking
1
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●
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UNR4211
UNR4212
UNR4213
UNR4214
UNR4215
UNR4216
UNR4217
UNR4218
UNR4219
UNR4210
UNR421D
UNR421E
UNR421F
UNR421K
UNR421L
2.54±0.15
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
■ Absolute Maximum Ratings
3
1.27 1.27
■ Resistance by Part Number
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
2
2.0±0.2
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
New S type package, allowing supply with the radial taping.
0.7±0.1
●
+0.2
0.45–0.1
■ Features
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Internal Connection
C
R1
B
R2
E
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Transistors with built-in Resistor
■ Electrical Characteristics
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Conditions
min
typ
ICBO
VCB = 50V, IE = 0
0.1
µA
VCE = 50V, IB = 0
0.5
µA
UNR4211
0.5
UNR4212/4214/421E/421D
0.2
0.1
UNR4215/4216/4217/4210
IEBO
VEB = 6V, IC = 0
0.01
UNR421F/421K
1.0
UNR4219
1.5
UNR4218/421L
VCBO
IC = 10µA, IE = 0
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
UNR4212/421E
60
UNR4213/4214
UNR4215*/4216*/4217*/4210*
hFE
VCE = 10V, IC = 5mA
UNR421F/421D/4219
80
160
460
30
20
VCE(sat)
IC = 10mA, IB = 0.3mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1kΩ
Output voltage low level
0.25
4.9
UNR421D
VOL
UNR421E
Transition frequency
0.2
VCC = 5V, VB = 3.5V, RL = 1kΩ
0.2
VCC = 5V, VB = 10V, RL = 1kΩ
0.2
VCC = 5V, VB = 6V, RL = 1kΩ
fT
150
UNR4211/4214/4215/421K
10
22
UNR4213/421D/421E/4210
R1
(–30%)
47
4.7
UNR4218
0.51
UNR4219
1
MHz
(+30%)
UNR4211/4212/4213/421L
0.8
1.0
1.2
UNR4214
0.17
0.21
0.25
0.08
0.1
0.12
3.7
4.7
5.7
UNR4218/4219
UNR421D
R1/R2
UNR421E
1.7
2.14
2.6
UNR421F
0.37
0.47
0.57
UNR421K
1.7
2.13
2.6
* hFE rank classification (UNR4215/4216/4217/4210)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
V
0.2
VCB = 10V, IE = –2mA, f = 200MHz
UNR4212/4217
UNR4216/421F/421L
V
V
VCC = 5V, VB = 2.5V, RL = 1kΩ
UNR4213/421K
2
V
35
UNR4218/421K/421L
Resistance
ratio
50
UNR4211
Collector to emitter saturation voltage
Input
resistance
mA
2.0
Collector to base voltage
Forward
current
transfer
ratio
Unit
ICEO
UNR4213
Emitter
cutoff
current
max
kΩ
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
400
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UNR4211
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
140
0.7mA
0.6mA
0.5mA
120
100
0.4mA
0.3mA
80
60
0.2mA
40
20
0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
100
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
0.3
25˚C
–25˚C
0.03
Collector to emitter voltage VCE (V)
1
3
10
Ta=75˚C
200
25˚C
–25˚C
100
30
1
100
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
0.3
Cob — VCB
6
Ta=75˚C
0.1
0.01
0.1
12
hFE — IC
400
Forward current transfer ratio hFE
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
3
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Characteristics charts of UNR4212
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
140
IB=1.0mA
0.9mA
0.8mA
120
0.7mA
0.6mA
0.5mA
100
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
25˚C
–25˚C
0.03
1
3
10
Ta=75˚C
200
25˚C
–25˚C
100
30
100
1
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
0.3
Cob — VCB
5
VCE=10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
Ta=75˚C
0.1
0.01
0.1
0
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR4213
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
120
0.9mA
0.8mA
0.7mA
0.6mA
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
4
12
hFE — IC
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
400
–25˚C
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
350
Ta=75˚C
300
25˚C
250
–25˚C
200
150
100
50
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
Collector current IC (mA)
1000
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR4214
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
80
0.4mA
60
0.3mA
40
0.2mA
20
0.1mA
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
0
–25˚C
1
3
10
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
30
1
100
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
0.3
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
5
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Characteristics charts of UNR4215
IC — VCE
VCE(sat) — IC
100
120
0.7mA
0.6mA
0.5mA
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
0
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
–25˚C
0.01
0.1
0.3
1
3
10
Ta=75˚C
250
200
25˚C
150
–25˚C
100
50
30
1
100
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
140
Collector current IC (mA)
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.03
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR4216
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
6
12
hFE — IC
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
400
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
350
Ta=75˚C
300
25˚C
250
–25˚C
200
150
100
50
–25˚C
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
Collector current IC (mA)
1000
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Cob — VCB
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
IO — VIN
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
VCB (V)
Characteristics charts of UNR4217
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
100
80
0.4mA
0.3mA
0.2mA
60
40
20
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
0.1
12
Collector to emitter voltage VCE (V)
300
250
200
Ta=75˚C
150
25˚C
–25˚C
100
50
0
0.3
1
3
10
30
100
1
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
350
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
–25˚C
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Collector to emitter saturation voltage VCE(sat) (V)
120
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
7
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Characteristics charts of UNR4218
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
0.7mA
160
120
0.6mA
0.5mA
0.4mA
80
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
Collector to emitter voltage VCE (V)
3
10
25˚C
–25˚C
40
30
100
1
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
80
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
120
0
1
0.3
Cob — VCB
6
VCE=10V
–25˚C
0.01
0.1
12
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.03
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR4219
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
160
120
0.5mA
0.4mA
80
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
8
12
hFE — IC
160
IC/IB=10
30
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
120
Ta=75˚C
80
25˚C
–25˚C
40
–25˚C
0.01
0.1
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
Collector current IC (mA)
1000
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Cob — VCB
IO — VIN
4
3
2
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
VIN — IO
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
0.03
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR4210
IC — VCE
VCE(sat) — IC
100
Ta=25˚C
Collector current IC (mA)
50
40
30
0.4mA
0.5mA
0.6mA
0.7mA
0.3mA
0.1mA
20
10
0
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
0.01
0.1
0.3
Collector to emitter voltage VCE (V)
1
3
10
Ta=75˚C
250
25˚C
200
–25˚C
150
100
50
30
100
1
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
350
0
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
IB=1.0mA
0.9mA
0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
60
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
9
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Characteristics charts of UNR421D
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
25
IB=1.0mA
20
15
0.2mA
0.1mA
10
5
Collector to emitter saturation voltage VCE(sat) (V)
100
Ta=25˚C
0.9mA
0.8mA
0.5mA
0.7mA
0.4mA
0.6mA
0.3mA
0
0
2
4
6
8
10
10
3
1
0.3
–25˚C
0.03
25˚C
–25˚C
80
40
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
3
10000
4
Ta=75˚C
120
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
1
0.3
Cob — VCB
6
Ta=75˚C
25˚C
0.1
Collector to emitter voltage VCE (V)
160
IC/IB=10
30
0.01
0.1
12
hFE — IC
Forward current transfer ratio hFE
30
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
1.5
100
VCB (V)
2.0
2.5
3.0
3.5
0.01
0.1
4.0
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR421E
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
50
40
0.3mA
0.4mA
0.5mA
30
0.2mA
0.1mA
20
10
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
10
12
hFE — IC
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
0.1
160
VCE=10V
Forward current transfer ratio hFE
IB=1.0mA
0.7mA Ta=25˚C
0.9mA
0.6mA
0.8mA
100
Collector to emitter saturation voltage VCE(sat) (V)
60
Ta=75˚C
120
25˚C
–25˚C
80
40
–25˚C
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
Collector current IC (mA)
1000
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
1.5
100
VCB (V)
2.0
2.5
3.0
3.5
0.01
0.1
4.0
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR421F
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
0.9mA
0.8mA
0.7mA
0.6mA
160
120
IB=1.0mA
0.5mA
80
0.4mA
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
Ta=75˚C
1
0.3
25˚C
0.1
0.03
0.01
0.1
12
Collector to emitter voltage VCE (V)
Ta=75˚C
80
25˚C
–25˚C
40
0
0.3
1
3
10
30
1
100
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
120
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
–25˚C
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
11
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Characteristics charts of UNR421K
IC — VCE
VCE(sat) — IC
240
Collector current IC (mA)
200
160
IB=1.2mA
120
1.0mA
0.8mA
80
0.6mA
0.4mA
40
0.2mA
0
0
2
4
6
8
10
IC/IB=10
10
1
25˚C
–25˚C
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
1
3
10
30
100
300
1000
1
Collector current IC (mA)
3
10
30
100
300
1000
Collector current IC (mA)
VIN — IO
100
f=1MHz
IE=0
Ta=25˚C
4
3
2
VO=0.2V
Ta=25˚C
30
Input voltage VIN (V)
Collector output capacitance Cob (pF)
VCE=10V
0.01
12
Cob — VCB
5
Ta=75˚C
0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
240
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
100
10
3
1
0.3
0.1
1
0.03
0
3
1
10
30
Collector to base voltage
0.01
0.1
100
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR421L
IC — VCE
VCE(sat) — IC
240
Collector current IC (mA)
200
160
IB=1.0mA
0.8mA
120
0.6mA
80
0.4mA
40
0.2mA
0
IC/IB=10
10
1
Ta=75˚C
25˚C
0.1
–25˚C
0.01
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
hFE — IC
12
240
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
100
200
Ta=75˚C
160
25˚C
120
–25˚C
80
40
0
1
3
10
30
100
300
Collector current IC (mA)
1000
1
3
10
30
100
300
Collector current IC (mA)
1000
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Cob — VCB
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
5
Input voltage VIN (V)
Collector output capacitance Cob (pF)
IO — VIN
100
6
4
3
2
10
1
0.1
1
0
1
3
10
Collector to base voltage
30
100
VCB (V)
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
13
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2001 MAR

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