Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 × 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 ■ Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –30 V Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCEO –20 V VEBO –5 V IC –30 mA PT 150 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 0.2±0.1 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 7W Internal Connection 1 Tr1 5 2 3 ■ Electrical Characteristics Parameter Collector cutoff current *1 6 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 µA ICEO VCE = –20V, IB = 0 –100 µA –10 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 Forward current transfer ratio hFE VCB = –10V, IE = 1mA 50 Forward current transfer hFE ratio hFE (small/large)*1 VCB = –10V, IE = 1mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Base to emitter voltage VBE VCE = –10V, IC = –1mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 dB Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 Ω Common emitter reverse transfer capacitance Cre VCB = –10V, IE = 1mA, f = 10.7MHz 1.2 pF 220 0.99 – 0.1 – 0.7 150 V V MHz Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XP06435 PT — Ta IC — VCE VCE(sat) — IC –30 –100 –25 200 Collector current IC (mA) 150 100 50 IB=–250µA –20 –200µA –15 –150µA –10 –100µA –50µA –5 0 0 0 20 40 60 0 80 100 120 140 160 –2 –6 hFE — IC Ta=75˚C 25˚C –25˚C 60 40 20 0 –0.1 –0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) VCE=–10V 80 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 –0.1 –0.3 –100 Collector current IC (mA) –1 –3 fT — I E 20 400 300 200 100 3 10 30 Emitter current IE (mA) 2 –10 –30 100 –1 –3 –10 –30 –100 Collector current IC (mA) –100 5 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) NF — IE 5 VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 1 –0.01 –0.1 –0.3 Noise figure NF (dB) Power gain PG (dB) Transition frequency fT (MHz) 500 –25˚C –0.03 VCE=–10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C 25˚C –0.1 PG — IC 24 Ta=75˚C –0.3 Collector to base voltage VCB (V) 600 0.3 –1 Cre — VCE 6 100 –10 –3 Cob — VCB 120 0 0.1 –8 –10 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) Forward current transfer ratio hFE –4 IC/IB=10 –30 Common emitter reverse transfer capacitance Cre (pF) Total power dissipation PT (mW) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 250 0 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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