Composite Transistors XP0D873 (XP1D873) Silicon N-channel junction FET 0.425 Unit: mm For analog switching 0.20±0.05 5 4 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number 3 1 2 0.65 0.65 1.3±0.1 2.0±0.1 • 2SK1103 × 2 0.9±0.1 Rating Unit VGDS −50 V Drain current ID 30 mA Gate current IG 10 mA Total power dissipation PT 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Symbol 1: Source (FET1) 2: Drain 3: Source (FET2) EIAJ: SC-88A 0.9+0.2 –0.1 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features Gate-drain surrender voltage 0.12+0.05 –0.02 4: Gate (FET2) 5: Gate (FET1) SMini5-G1 Package Marking Symbol: OC Internal Connection 5 4 FET1 FET2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit VGDS IC = −10 µA, VDS = 0 −50 Drain-source cutoff current IDSS VDS = 10 V, VGS = 0 0.2 Gate-source cutoff current IGSS VGS = −30 V, VDS = 0 Gate-source cutoff voltage VGSC VDS = 10 V, ID = 10 µA −1.5 Drain-source ON resistance RDS(on) VDS = 10 mV, VGS = 0 300 Ω 2.5 mS 7 pF Gate-drain surrender voltage V 6.0 mA −10 nA −3.5 V Mutual conductance gm VDS = 10 V, ID = 1 mA, f = 1 kHz Short-circuit forward transfer capacitance (Common-source) Ciss VDS = 10 V, VGS = 0, f = 1 MHz Short-circuit output capacitance (Common-source) Coss 1.5 pF Reverse transfer capacitance (Common-source) Crss 1.5 pF 1.8 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: December 2003 SJJ00223BED 1 XP0D873 PT Ta ID VDS 150 100 1.2 − 0.1 V − 0.2 V 0.8 − 0.3 V 0.4 40 80 120 0 160 0 2 6 Yfs VGS 8 10 Yfs ID Forward transfer admittance Yfs (mS) 4 3 2 1 −1.2 − 0.8 − 0.4 Gate to source voltage VGS (V) 0 VDS = 10 V Ta = 25°C 4 3 2 1 0 0 1 2 3 4 5 Drain current ID (mA) SJJ00223BED 0 −1.2 75°C −1.0 − 0.8 − 0.6 − 0.4 − 0.2 Gate to source voltage VGS (V) 5 VDS = 10 V Ta = 25°C 0.8 0.4 Drain to source voltage VDS (V) 5 0 −1.6 4 Ta = −25°C 1.2 25°C − 0.4 V 50 0 Drain current ID (mA) Drain current ID (mA) Total power dissipation PT (mW) 1.6 200 Ambient temperature Ta (°C) Forward transfer admittance Yfs (mS) VDS = 10 V Ta = 25°C VGS = 0 V 0 2 ID VGS 2.0 1.6 250 6 0 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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